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放大器
運算放大器 (op amps)
一般用途運算放大器

LF356

現行

單路、36-V、5-MHz、高電壓轉換率 (12-V/µs)、輸入至 V+、JFET 輸入運算放大器

立即訂購
產品規格表

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open-in-new 比較替代產品
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TL081H 現行 具有操作溫度 -40°C 至 125°C 的單路、40-V、5.25-MHz、4-mV 偏移電壓、20-V/µs、輸入至 V+ 運算放大器 Wider supply range (4.5 V to 40 V), higher GBW (5.25 MHz), faster slew rate (20 V/us), lower offset voltage (4 mV), lower power (0.9375 mA)
TL071H 現行 具有操作溫度 -40°C 至 125°C 的單路、40-V、5-MHz、4-mV 偏移電壓、20-V/µs、輸入至 V+ 運算放大器 Wider temperature range (-40°C to 125°C), lower quiescent current (0.0937 mA), wider voltage range (4.5 V to 40 V), and improved offset voltage drift

LF356

現行
立即訂購

產品詳細資料

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 10 Rail-to-rail In to V+ GBW (typ) (MHz) 5 Slew rate (typ) (V/µs) 12 Vos (offset voltage at 25°C) (max) (mV) 10 Iq per channel (typ) (mA) 5 Vn at 1 kHz (typ) (nV√Hz) 12 Rating Catalog Operating temperature range (°C) 0 to 70 Offset drift (typ) (µV/°C) 3 Input bias current (max) (pA) 8000 CMRR (typ) (dB) 100 Iout (typ) (A) 0.025 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 0.1 Output swing headroom (to negative supply) (typ) (V) 2 Output swing headroom (to positive supply) (typ) (V) -2
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 10 Rail-to-rail In to V+ GBW (typ) (MHz) 5 Slew rate (typ) (V/µs) 12 Vos (offset voltage at 25°C) (max) (mV) 10 Iq per channel (typ) (mA) 5 Vn at 1 kHz (typ) (nV√Hz) 12 Rating Catalog Operating temperature range (°C) 0 to 70 Offset drift (typ) (µV/°C) 3 Input bias current (max) (pA) 8000 CMRR (typ) (dB) 100 Iout (typ) (A) 0.025 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 0.1 Output swing headroom (to negative supply) (typ) (V) 2 Output swing headroom (to positive supply) (typ) (V) -2
PDIP (P) 8 92.5083 mm² (9.81 mm × 9.43 mm) SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • Advantages
    • Replace Expensive Hybrid and Module FET
      Op Amps
    • Rugged JFETs Allow Blow-Out Free Handling
      Compared With MOSFET Input Devices
    • Excellent for Low Noise Applications Using
      Either High or Low Source Impedance–Very
      Low 1/f Corner
    • Offset Adjust Does Not Degrade Drift or
      Common-Mode Rejection as in Most
      Monolithic Amplifiers
    • New Output Stage Allows Use of Large
      Capacitive Loads (5,000 pF) Without Stability
      Problems
    • Internal Compensation and Large Differential
      Input Voltage Capability
  • Common Features
    • Low Input Bias Current: 30 pA
    • Low Input Offset Current: 3 pA
    • High Input Impedance: 1012 Ω
    • Low Input Noise Current: 0.01 pA/√Hz
    • High Common-Mode Rejection Ratio: 100 dB
    • Large DC Voltage Gain: 106 dB
  • Uncommon Features
    • Extremely Fast Settling Time to 0.01%:
      • 4 µs for the LFx55 devices
      • 1.5 µs for the LFx56
      • 1.5 µs for the LFx57 (AV = 5)
    • Fast Slew Rate:
      • 5 V/µs for the LFx55
      • 12 V/µs for the LFx56
      • 50 V/µs for the LFx57 (AV = 5)
    • Wide Gain Bandwidth:
      • 2.5 MHz for the LFx55 devices
      • 5 MHz for the LFx56
      • 20 MHz for the LFx57 (AV = 5)
    • Low Input Noise Voltage:
      • 20 nV/√Hz for the LFx55
      • 12 nV/√Hz for the LFx56
      • 12 nV/√Hz for the LFx57 (AV = 5)
  • Advantages
    • Replace Expensive Hybrid and Module FET
      Op Amps
    • Rugged JFETs Allow Blow-Out Free Handling
      Compared With MOSFET Input Devices
    • Excellent for Low Noise Applications Using
      Either High or Low Source Impedance–Very
      Low 1/f Corner
    • Offset Adjust Does Not Degrade Drift or
      Common-Mode Rejection as in Most
      Monolithic Amplifiers
    • New Output Stage Allows Use of Large
      Capacitive Loads (5,000 pF) Without Stability
      Problems
    • Internal Compensation and Large Differential
      Input Voltage Capability
  • Common Features
    • Low Input Bias Current: 30 pA
    • Low Input Offset Current: 3 pA
    • High Input Impedance: 1012 Ω
    • Low Input Noise Current: 0.01 pA/√Hz
    • High Common-Mode Rejection Ratio: 100 dB
    • Large DC Voltage Gain: 106 dB
  • Uncommon Features
    • Extremely Fast Settling Time to 0.01%:
      • 4 µs for the LFx55 devices
      • 1.5 µs for the LFx56
      • 1.5 µs for the LFx57 (AV = 5)
    • Fast Slew Rate:
      • 5 V/µs for the LFx55
      • 12 V/µs for the LFx56
      • 50 V/µs for the LFx57 (AV = 5)
    • Wide Gain Bandwidth:
      • 2.5 MHz for the LFx55 devices
      • 5 MHz for the LFx56
      • 20 MHz for the LFx57 (AV = 5)
    • Low Input Noise Voltage:
      • 20 nV/√Hz for the LFx55
      • 12 nV/√Hz for the LFx56
      • 12 nV/√Hz for the LFx57 (AV = 5)

The LFx5x devices are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

The LFx5x devices are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 LFx5x JFET Input Operational Amplifiers datasheet (Rev. D) PDF | HTML 2015/11/30
電子書 The Signal e-book: A compendium of blog posts on op amp design topics PDF | HTML 2017/3/28
應用說明 AN-272 Op Amp Booster Designs (Rev. B) 2013/4/23
應用說明 Effect of Heavy Loads on Accuracy and Linearity of Op Amp Circuits (Rev. B) 2013/4/22
應用說明 AN-263 Sine Wave Generation Techniques (Rev. C) 2013/4/22
應用說明 Data Acq Using ADC0816 & ADC0817 8-Bit ADC w/On-Chip 16 Chan Multiplexr 2004/5/10
應用說明 AN-293 Control Applications of CMOS DACs 2004/5/10
應用說明 AN-447 Protection Schemes for BI-FET Amplifiers and Switches 2004/5/2
應用說明 AN-253 LH0024 and LH0032 High Speed Op Amp Applications 2004/5/2
應用說明 AN-275 CMOS D/A Converters Match Most Microprocessors 2004/5/2
應用說明 Get Fast Stable Response From Improved Unity-Gain Followers 2002/10/2

設計與開發

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開發板

AMP-PDK-EVM — 放大器性能開發套件評估模組

放大器性能開發套件 (PDK) 是一款評估模組 (EVM) 套件，可測試通用運算放大器 (op amp) 參數，並與大多數運算放大器和比較器相容。EVM 套件提供主板和多個插槽式子卡選項，可滿足封裝需求，使工程師能夠快速評估和驗證裝置性能。

AMP-PDK-EVM 套件支援五種最熱門的業界標準封裝，包括：

  • D (SOIC-8 和 SOIC-14)
  • PW (TSSOP-14)
  • DGK (VSSOP-8)
  • DBV (SOT23-5 和 SOT23-6)
  • DCK (SC70-5 和 SC70-6)
使用指南: PDF | HTML
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開發板

DIP-ADAPTER-EVM — DIP 轉接器評估模組

Speed up your op amp prototyping and testing with the DIP-Adapter-EVM, which provides a fast, easy and inexpensive way to interface with small, surface-mount ICs. You can connect any supported op amp using the included Samtec terminal strips or wire them directly to existing circuits.

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模擬型號

LF356 PSPICE Model

SNOM255.ZIP (1 KB) - PSpice 模型
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封裝 針腳 CAD 符號、佔位空間與 3D 模型
PDIP (P) 8 Ultra Librarian
SOIC (D) 8 Ultra Librarian
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