JFE2325
- Monolithic, matched, N-Channel JFETs
- Self-biased gates for high input impedance (>400GOhm)
- Low input capacitance: 0.85pF per JFET
- Low noise: ˗110dBV(A-wt.) with 5pF input capacitance
- Low VGS mismatch: 30mV (max)
- Low IDSS mismatch: 5% (max)
- High gate-to-drain breakdown voltage: 30V
- Extremely Small Package: 0.8mm × 1mm X2SON
The JFE2325 is a monolithic, matched-pair discrete JFET intended for use with very high-impedance sensors such as electret condenser microphones (ECMs). The device consists of two N-channel JFETs, laid out for excellent matching on a single die. The gate of each JFET is biased by an integrated diode which allows for direct coupling of a signal source to the gate without the need for a biasing resistor. The JFE2325 achieves much higher input impedance (>400GOhm) than possible if discrete resistors were used to bias the gate. Furthermore, the JFE2325 features an extremely low input capacitance of 0.85pF per JFET which maximizes signal levels from transducers with extremely low output capacitance.
Each JFET is capable of 0.7mS of transconductance when configured to run at the full drain current of 385µA. The JFETs can be used individually, or in parallel for higher transconductance and lower noise.
The JFE2325 can withstand a high gate-to-drain voltage of 30V. The temperature range is specified from –40°C to +125°C.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | JFE2325 Dual, Low-Power, N-Channel JFET for Electret Microphones datasheet (Rev. A) | PDF | HTML | 2026/6/18 |
設計與開發
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JFE2325EVM — JFE2325 評估模組
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| X2SON (DTQ) | 6 | Ultra Librarian |