ISOS510-SP
- Radiation Performance
- Total Ionizing Dose (TID) characterized up to 100krad(Si)
- TID RLAT/RHA up to 100krad(Si)
- Single-Event Latch-up (SEL) Immune to LET up to 75MeV-cm2/mg at 125℃
- Single-event transient (SET) characterized LET up to 75MeV-cm2/mg
- SMD# 5962R2620601PXE
- QML Class
P
- Meets NASA ASTM E595 Outgassing Spec
- Military Temp Range (-55℃ to 125℃)
- 1-channel diode input
- Current transfer ratio (CTR) at IF = 5mA, VCE = 5V: 95% to 164%
- High collector-emitter voltage: VCE (max) = 30V
- Robust SiO2 isolation barrier
- Isolation rating: 3750VRMS
- Working voltage: 500VRMS, 707VPK
- Surge capability: up to 10kV
- Response time: 3µs (typical) at VCE = 10V, IC = 2mA, RL = 100Ω
- Small 4-pin package (DFG)
The ISOS510-SPradiation-hardened device is a single-channel, current-driven, analog isolator with transistor output. The device offers significant reliability and performance advantages compared to other current-driven analog isolators, including high bandwidth, low turn-off delay, low power consumption, wider temperature ranges, flat current transfer ratio (CTR), and tight process controls resulting in small part-to-part skew. These performance advantages stay stable across radiation, temperature, and lifetime.
ISOS510-SP is offered in small a SOIC-4 package with 2.54mm pin pitch, supporting a 3.75kVRMS isolation rating . The high performance and reliability of ISOS510-SP enables these devices to be used in aerospace and defense applications such as feedback loops in isolated DC/DC modules, satellite propulsion power processing units, spacecraft battery management systems, and more.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | ISOS510-SP Radiation Hardened , Current-Driven Analog Isolator With Transistor Output datasheet | PDF | HTML | 2026/5/4 |
設計與開發
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ISOM-EVM — 通用光學模擬器評估模組
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| SOIC (DFG) | 4 | Ultra Librarian |
訂購與品質
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