ISO5851
- 100-kV/µs Minimum Common-Mode Transient Immunity (CMTI) at V CM = 1500 V
- 2.5-A Peak Source and 5-A Peak Sink Currents
- Short Propagation Delay: 76 ns (Typ), 110 ns (Max)
- 2-A Active Miller Clamp
- Output Short-Circuit Clamp
- Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
- Input and Output Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication
- Active Output Pull-down and Default Low Outputs with Low Supply or Floating Inputs
- 3-V to 5.5-V Input Supply Voltage
- 15-V to 30-V Output Driver Supply Voltage
- CMOS Compatible Inputs
- Rejects Input Pulses and Noise Transients Shorter Than 20 ns
- Operating Temperature: –40°C to +125°C Ambient
- Isolation Surge Withstand Voltage 12800-V PK
- Safety-Related Certifications:
- 8000-V PK V IOTM and 2121-V PK V IORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
- 5700-V RMS Isolation for 1 Minute per UL 1577
- CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
- TUV Certification per EN 61010-1 and EN 60950-1
- GB4943.1-2011 CQC Certification
The ISO5851 is a 5.7-kV RMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5-A source and 5-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage.
An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overload condition. Upon a DESAT detect, the gate driver output is driven low to V EE2 potential, turning the IGBT immediately off.
When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.
When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path preventing IGBT to be dynamically turned on during high voltage transient conditions.
When desaturation is active, a fault signal is sent across the isolation barrier pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.
When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path preventing IGBT to be dynamically turned on during high voltage transient conditions.
The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low; otherwise, this output is high.
The ISO5851 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.
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設計與開發
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ISO5851EVM — ISO5851 評估模組 (EVM)
此配備 ISO5851 加強型隔離式閘極驅動器裝置的評估模組，可讓設計人員使用預先打件的 1nF 負載，或在標準 TO-247 或 TO-220 封裝中使用使用者安裝的 IGBT 來評估裝置的 AC 與 DC 性能。
SLLR118 — ISO5851EVM Design Files
TIDA-00446 — 三相轉換器的小型強化隔離式 IGBT 閘極驅動器參考設計
TIDA-00446 參考設計包括六個加強型隔離式 IGBT 閘極驅動器以及專用的閘極驅動電源。這種緊湊的參考設計旨在控制 3 相位逆變器（如 AC 驅動器、不間斷電源 (UPS) 和太陽能逆變器）中的 IGBT。此設計採用強化隔離式 IGBT 閘極驅動器，具有 DESAT 功能與內建式米勒箝位保護，能夠使用單極供應電壓來驅動閘極。每個閘極驅動器所使用的開迴路推拉式拓撲架構電源供應器皆可為 PCB 佈線提供更大的彈性。TIDA-00446 中的推拉式變壓驅動器運作頻率為 420khz，有助於縮小隔離變壓器的佔用空間，打造小巧的電源供應器解決方案。可以停用閘極驅動電源，以便安全關閉轉矩 (...)
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| SOIC (DW) | 16 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。