DRV8363-Q1
- AEC-Q100 Test Guidance for automotive applications
- Device ambient temperature: –40°C to +125°C
- Three phase half-bridge gate driver
- Drives six N-channel MOSFETs (NMOS)
- 8 to 85V wide operating voltage range
- Bootstrap architecture for high-side gate driver
- Supports 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
- Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external cut-off or reverse polarity protection circuit
- Smart Gate Drive architecture
- 15-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
- Closed-loop automatic deadtime insertion based on gate-source voltage monitoring
- Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
- Low-side Current Sense Amplifier
- 1mV low input offset across temperature
- 4-level adjustable gain
- Adjustable output bias to support unidirectional or bidirectional sensing
- SPI-based detailed configuration and diagnostics
- DRVOFF pin to disable driver independently
- High voltage wake up pin (nSLEEP)
- Dedicated ASCIN pin to control motor braking (active short circuit)
- 6x, 3x, 1x, and Independent PWM Modes
- Supports 3.3V and 5V Logic Inputs
- Integrated protection
features
- Battery and power supply voltage monitors
- MOSFET VDS and Rsense over current monitors
- MOSFET VGS gate fault monitors
- Device thermal warning and shutdown
- Fault condition indicator pin
The DRV8363-Q1 is an integrated smart gate driver for 48V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8363-Q1 generates the correct gate drive voltages using an external 12V supply and an integrated bootstrap diode for the high-side MOSFETs. The Smart Gate Drive architecture supports configurable peak gate drive current from 16mA up to 1A source and 2A sink. The DRV8363-Q1 can operate with a wide input range from 8V to 85V at the motor connection. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control and provides overdrive gate drive voltage of external switches.
The DRV8363-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurements.
A wide range of diagnostics and protection features are integrated with the DRV8363-Q1 enables a robust motor drive system design and helps eliminate the need of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | DRV8363-Q1 48V Battery Three-Phase Smart Gate Driver with Accurate Current Sensing and Advanced Monitoring datasheet (Rev. A) | PDF | HTML | 2025/12/16 | ||
| Application brief | Automotive Smart Actuators | PDF | HTML | 2026/5/20 | |||
| Application brief | Understanding Gate Driver Slew Rate Control, MOSFET Switching Optimization and Protection Features (Rev. A) | PDF | HTML | 2025/12/11 | |||
| 應用說明 | 48V 汽車系統馬達驅動器電壓轉換速率考量 | PDF | HTML | Download English Version | PDF | HTML | 2025/12/1 | |
| 技術文章 | 主動短路技術將電動自行車安全性提升至全新的層級 | PDF | HTML | Download English Version | PDF | HTML | 2025/9/12 | |
| 證書 | DRV8363-Q1EVM EU Declaration of Conformity (DoC) | PDF | HTML | 2025/4/11 |
設計與開發
如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。
DRV8363-Q1EVM — DRV8363-Q1 評估模組
DRV8363-Q1EVM 是以 BLDC 馬達之 DRV8363-Q1 閘極驅動器為基礎的 30A、3 相無刷 DC 驅動級。
此 EVM 可快速評估 DRV8363-Q1 產品，其會利用梯形整流和控制轉動 BLDC 馬達。
所有電源供應器的狀態 LED 及故障 LED 均包含在內，以供使用者回饋。此套件需要 C2000 launchpad (LAUNCHXL-F280049C)，用於控制 DRV8363-Q1，並監控與回報故障。
LAUNCHXL- F280049C LaunchPad™ 開發套件為必需套件，且不包含於此 EVM 套件中。
TIDA-020094 — 48V 區域參考設計
此參考設計展示了進階車用 48V 低電壓軌架構的趨勢。此設計包括 48V 骨幹架構和 48V 至 12V 電源轉換。參考設計重點介紹關鍵產品的 48V 負載驅動器。這些產品包括高壓側開關 (HSS) 和控制器 (HSSC)、智慧 eFuse 和馬達驅動器 (MD)。
TIDA-020101 — 車用 48V 300W HVAC 幫浦、鼓風機和風扇參考設計
此參考設計展示 48V、300W 峰值智慧型馬達無刷直流電 (BLDC) 實作。離散式方法可實現直徑小至 55mm、精巧且靈活的外型尺寸。本設計能將低功率睡眠模式維持在 100μA 以下。此設計運用 TI 半導體促進高效率運作。此架構為要求高功率、高精密度與小型化的嚴苛車用暖通空調 (HVAC) 應用，奠定了堅實基礎。
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RGZ) | 48 | Ultra Librarian |