產品詳細資料

Rating Catalog Architecture 3-phase, Integrated FET Control interface 6xPWM Peak output current (A) 5 RDS(ON) (HS + LS) (Ω) 0.205 VDS (max) (V) 650 Features Integrated GaN FET Operating temperature range (°C) -40 to 125
Rating Catalog Architecture 3-phase, Integrated FET Control interface 6xPWM Peak output current (A) 5 RDS(ON) (HS + LS) (Ω) 0.205 VDS (max) (V) 650 Features Integrated GaN FET Operating temperature range (°C) -40 to 125
VQFN (REN) 65 144 mm² (12 mm × 12 mm)
  • Three-phase PWM motor driver with integrated 650V enhancement mode GaN FETs
  • Up to 450V operating voltage
    • 650V absolute maximum voltage
  • High output current capability: 5A Peak current
  • Low conduction loss: Low on-state resistance per GaN FET: 205mΩ RDS(ON) at TA = 25°C
  • Low switching loss: Zero reverse recovery, low output capacitance, slew rate control
  • Low distortion: Ultra-low propagation delay < 135ns, Ultra-low adaptive dead time < 200ns
  • Integrated gate drives with slew rate control of phase node voltage
    • Slew rate options from 5V/ns to 40V/ns
  • Integrated fast bootstrap GaN rectifier
  • Low-side GaN FET open source pins to support 1- or 2- or 3-shunt current sensing
  • Supports up to 100kHz hard switching
  • Integrates an amplifier for current sensing
  • Supports 3.3V and 5V logic inputs, up to 20V
  • BRAKE pin to turn on all low side GaN FETs
  • Integrated temperature sensor
  • >1.6mm clearance of motor phase (OUTx) to the adjacent pins.
  • 2mm clearance between VM and GND
  • Integrated protection features
    • GVDD and bootstrap under voltage lockout
    • Over current protection for low-side GaN FET
    • Over temperature protection
    • PWM adaptive dead time insertion
    • Current limit protection for all three phases
    • Fault condition indication pin (nFAULT)
  • Three-phase PWM motor driver with integrated 650V enhancement mode GaN FETs
  • Up to 450V operating voltage
    • 650V absolute maximum voltage
  • High output current capability: 5A Peak current
  • Low conduction loss: Low on-state resistance per GaN FET: 205mΩ RDS(ON) at TA = 25°C
  • Low switching loss: Zero reverse recovery, low output capacitance, slew rate control
  • Low distortion: Ultra-low propagation delay < 135ns, Ultra-low adaptive dead time < 200ns
  • Integrated gate drives with slew rate control of phase node voltage
    • Slew rate options from 5V/ns to 40V/ns
  • Integrated fast bootstrap GaN rectifier
  • Low-side GaN FET open source pins to support 1- or 2- or 3-shunt current sensing
  • Supports up to 100kHz hard switching
  • Integrates an amplifier for current sensing
  • Supports 3.3V and 5V logic inputs, up to 20V
  • BRAKE pin to turn on all low side GaN FETs
  • Integrated temperature sensor
  • >1.6mm clearance of motor phase (OUTx) to the adjacent pins.
  • 2mm clearance between VM and GND
  • Integrated protection features
    • GVDD and bootstrap under voltage lockout
    • Over current protection for low-side GaN FET
    • Over temperature protection
    • PWM adaptive dead time insertion
    • Current limit protection for all three phases
    • Fault condition indication pin (nFAULT)

The DRV7308 is a three-phase intelligent power module (IPM) that consists of 205mΩ, 650V e-mode Gallium-Nitride (GaN) for driving three-phase BLDC/PMSM motors up to 450V DC rails. The applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal (six step) current control of BLDC motors. The device helps to achieve more than 99% efficiency for a 3-phase modulated, FOC-driven, 250W motor drive application in a QFN 12mm x 12mm package at 20kHz switching frequency, eliminating the need for heat sink. The device helps to achieve ultra quiet operation, with very low dead time. The integrated bootstrap rectifier with bootstrap current limit eliminates the need for an external bootstrap diode.

The DRV7308 is a three-phase intelligent power module (IPM) that consists of 205mΩ, 650V e-mode Gallium-Nitride (GaN) for driving three-phase BLDC/PMSM motors up to 450V DC rails. The applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal (six step) current control of BLDC motors. The device helps to achieve more than 99% efficiency for a 3-phase modulated, FOC-driven, 250W motor drive application in a QFN 12mm x 12mm package at 20kHz switching frequency, eliminating the need for heat sink. The device helps to achieve ultra quiet operation, with very low dead time. The integrated bootstrap rectifier with bootstrap current limit eliminates the need for an external bootstrap diode.

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設計與開發

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開發板

DRV7308EVM — DRV7308 評估模組

DRV7308EVM 是專為全面評估 DRV7308 馬達驅動器而設計的模組。此裝置為一款 250W、450V 整合式三重氮化鎵 (GaN) FET 半橋式閘極驅動器,適合馬達驅動器應用。DRV7308EVM 提供三種 650V E-mode GaN 整合式半橋,可直接驅動三相無刷 DC 馬達。


此套件需要 C2000™ LAUNCHXL-F2800137 LaunchPad™,用於操作和監控 DRV7308 驅動器。PWM、故障反應和進一步的裝置控制由 LAUNCHXL-F2800137 模組提供。

使用指南: PDF | HTML
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計算工具

DRV7308-THERMAL-CALC — DRV7308 專用熱計算工具,可用於預估功率損耗與元件溫度

Thermal calculator for the DRV7308 to estimate power loss and device temperature
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認證

DRV7308EVM-CERT — DRV7308EVM 符合性聲明認證

Declaration of Conformity (DoC) compliance certification for the DRV7308EVM
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參考設計

TIDA-010273 — 250W 馬達逆變器參考設計

此參考設計為用於主要電器或類似應用的 250W 馬達驅動器,設計中呈現無散熱器的 GaN IPM DRV7308 架構高效率馬達逆變器,還展示了具有 UCC28911 的低待機功耗設計。此參考設計展示透過具有 FAST™ 軟體編碼器或 eSMO 的三相 PMSM 來實作無感測器 FOC 控制的方法。此參考設計採用模組化設計,在同一個主機板上同時支援 C2000™ MCU 和 MSPM0 系列微控制器子板。此參考設計提供的軟硬體皆經過測試且隨時可用,有助於加快開發至上市時間。設計詳細資訊和測試結果可在此設計指南中找到。

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封裝 針腳 CAD 符號、佔位空間與 3D 模型
VQFN (REN) 65 Ultra Librarian

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