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UCC27524A1-Q1

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UCC27624-Q1 활성 4V UVLO 및 낮은 전파 지연을 지원하는 차량용, 30V VDD, 5A/5A 듀얼 채널 저압측 게이트 드라이버 Next generation, Pin-to-Pin, and wider voltage range

UCC27524A1-Q1

활성
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제품 상세 정보

Number of channels 2 Power switch GaNFET, IGBT, MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 18 Features Enable pin Operating temperature range (°C) -40 to 140 Rise time (ns) 7 Fall time (ns) 6 Propagation delay time (µs) 0.013 Input threshold CMOS, TTL Channel input logic Dual, Non-Inverting Input negative voltage (V) -5 Rating Automotive Undervoltage lockout (typ) (V) 4 Driver configuration Dual, Non-Inverting
Number of channels 2 Power switch GaNFET, IGBT, MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 18 Features Enable pin Operating temperature range (°C) -40 to 140 Rise time (ns) 7 Fall time (ns) 6 Propagation delay time (µs) 0.013 Input threshold CMOS, TTL Channel input logic Dual, Non-Inverting Input negative voltage (V) -5 Rating Automotive Undervoltage lockout (typ) (V) 4 Driver configuration Dual, Non-Inverting
HVSSOP (DGN) 8 14.7 mm² (3 mm × 4.9 mm)
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
  • Industry-standard pin out
  • Two independent gate-drive channels
  • 5A peak source and sink-drive current
  • Independent enable function for each output
  • TTL and CMOS-compatible logic threshold independent of supply voltage
  • Hysteretic-logic thresholds for high-noise immunity
  • Ability to handle negative voltages (–5V) at inputs
  • Inputs and enable pin voltage levels not restricted by VDD pin bias supply voltage
  • 4.5V to 18V single supply range
  • Outputs held low during VDD-UVLO, (ensures glitch-free operation at power up and power down)
  • Fast propagation delays (17ns typical)
  • Fast rise and fall times (3.5ns and 6ns typical)
  • 1ns typical delay matching between two channels
  • Ability to parallel two outputs for high-drive current
  • Outputs held low when inputs are floating
  • MSOP-8 PowerPad™ package
  • Operating junction temperature range of –40°C to 150°C
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
  • Industry-standard pin out
  • Two independent gate-drive channels
  • 5A peak source and sink-drive current
  • Independent enable function for each output
  • TTL and CMOS-compatible logic threshold independent of supply voltage
  • Hysteretic-logic thresholds for high-noise immunity
  • Ability to handle negative voltages (–5V) at inputs
  • Inputs and enable pin voltage levels not restricted by VDD pin bias supply voltage
  • 4.5V to 18V single supply range
  • Outputs held low during VDD-UVLO, (ensures glitch-free operation at power up and power down)
  • Fast propagation delays (17ns typical)
  • Fast rise and fall times (3.5ns and 6ns typical)
  • 1ns typical delay matching between two channels
  • Ability to parallel two outputs for high-drive current
  • Outputs held low when inputs are floating
  • MSOP-8 PowerPad™ package
  • Operating junction temperature range of –40°C to 150°C

The UCC27524A1-Q1 device is a dual-channel, high-speed, low-side, gate-driver device capable of effectively driving MOSFET and IGBT power switches. The UCC27524A1-Q1 device is a variant of the UCC2752x family. The UCC27524A1-Q1 device adds the ability to handle –5V directly at the input pins for increased robustness. The UCC27524A1-Q1 device is a dual, non-inverting driver. Using a design that inherently minimizes shoot-through current, the UCC27524A1-Q1 device is capable of delivering high-peak current pulses of up to 5A source and 5A sink into capacitive loads along with rail-to-rail drive capability and extremely small propagation delay (typically 17ns). In addition, the drivers feature matched, internal-propagation delays between the two channels which are very well suited for applications requiring dual-gate drives with critical timing, such as synchronous rectifiers. This also enables connecting two channels in parallel to effectively increase current-drive capability or driving two switches in parallel with a single input signal. The input pin thresholds are based on TTL and CMOS compatible low-voltage logic, which is fixed and independent of the VDD supply voltage. Wide hysteresis between the high and low thresholds offers excellent noise immunity.

For protection purposes, internal pull-up and pull-down resistors on the input pins of the UCC27524A1-Q1 device ensure that outputs are held LOW when input pins are in floating condition. The UCC27524A1-Q1 device features enable pins (ENA and ENB) to have better control of the operation of the driver applications. The pins are internally pulled up to VDD for active-high logic and are left open for standard operation.

The UCC27524A1-Q1 devices is available in a MSOP-PowerPAD-8 with exposed pad (DGN) package.

The UCC27524A1-Q1 device is a dual-channel, high-speed, low-side, gate-driver device capable of effectively driving MOSFET and IGBT power switches. The UCC27524A1-Q1 device is a variant of the UCC2752x family. The UCC27524A1-Q1 device adds the ability to handle –5V directly at the input pins for increased robustness. The UCC27524A1-Q1 device is a dual, non-inverting driver. Using a design that inherently minimizes shoot-through current, the UCC27524A1-Q1 device is capable of delivering high-peak current pulses of up to 5A source and 5A sink into capacitive loads along with rail-to-rail drive capability and extremely small propagation delay (typically 17ns). In addition, the drivers feature matched, internal-propagation delays between the two channels which are very well suited for applications requiring dual-gate drives with critical timing, such as synchronous rectifiers. This also enables connecting two channels in parallel to effectively increase current-drive capability or driving two switches in parallel with a single input signal. The input pin thresholds are based on TTL and CMOS compatible low-voltage logic, which is fixed and independent of the VDD supply voltage. Wide hysteresis between the high and low thresholds offers excellent noise immunity.

For protection purposes, internal pull-up and pull-down resistors on the input pins of the UCC27524A1-Q1 device ensure that outputs are held LOW when input pins are in floating condition. The UCC27524A1-Q1 device features enable pins (ENA and ENB) to have better control of the operation of the driver applications. The pins are internally pulled up to VDD for active-high logic and are left open for standard operation.

The UCC27524A1-Q1 devices is available in a MSOP-PowerPAD-8 with exposed pad (DGN) package.
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비교 대상 장치와 동일한 기능을 지원하는 핀 대 핀.
UCC27624V-Q1 활성 Automotive, 30V VDD, 5A/5A dual-channel low-side gate driver with 8V UVLO and low propagation delay More recent pin-to-pin device with higher supply voltage range, 8V UVLO and similar electrical characteristics
UCC27444-Q1 활성 -5V 입력 및 활성화를 지원하는 차량용, 20V VDD, 4A/4A 듀얼 채널 저압측 게이트 드라이버 Similar pin-to-pin device with 4A/4A drive current and similar electrical characteristics

기술 자료

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15개 모두 보기
상위 문서 유형 직함 형식 옵션 최신 영어 버전 다운로드 날짜
* 데이터 시트 UCC27524A1-Q1 Dual 5A, High-Speed, Low-Side Gate Driver With Negative Input Voltage Capability datasheet (Rev. A) PDF | HTML 2024. 6. 13
애플리케이션 노트 Why use a Gate Drive Transformer? PDF | HTML 2024. 3. 4
애플리케이션 노트 Static Magnet Power Supply Design for Magnetic Resonance Imaging Application PDF | HTML 2024. 1. 22
애플리케이션 노트 Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML 2024. 1. 22
애플리케이션 노트 Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver PDF | HTML 2021. 11. 10
Application brief External Gate Resistor Selection Guide (Rev. A) 2020. 2. 28
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020. 2. 28
애플리케이션 노트 Improving Efficiency of DC-DC Conversion through Layout 2019. 5. 7
Application brief How to overcome negative voltage transients on low-side gate drivers' inputs 2019. 1. 18
Application brief High-Side Cutoff Switches for High-Power Automotive Applications (Rev. A) 2018. 11. 26
추가 자료 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018. 10. 29
애플리케이션 노트 PFC Design Choice for On Board Charger Designs 2018. 5. 24
백서 Driving the future of HEV/EV with high-voltage solutions (Rev. B) 2018. 5. 16
Application brief Reducing Switching Losses in On-Board Chargers for Electric Vehicles 2018. 3. 27
Application brief Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole 2018. 3. 16

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