홈 전력 관리 DDR 메모리 전원 IC
홈
전력 관리
DDR 메모리 전원 IC

TPS7H3302-SP

활성

Radiation-hardened, QML-P, 2.3V to 3.5V input, 3A sink and source DDR termination LDO regulator

지금 주문하기
데이터 시트

TPS7H3302-SP

활성
데이터 시트 지금 주문하기

제품 상세 정보

DDR memory type DDR2, DDR3, DDR4 Control mode S3, S4/S5 Iout VTT (max) (A) 3 Iq (typ) (mA) 18 Output VREF, VTT Vin (min) (V) 0.9 Vin (max) (V) 3.5 Features Complete Solution, Shutdown Pin for S3 Rating Space Operating temperature range (°C) -55 to 125 Regulator type Linear Regulator Vin bias (max) (V) 3.5 Vin bias (min) (V) 2.375 Vout VTT (min) (V) 0.6
DDR memory type DDR2, DDR3, DDR4 Control mode S3, S4/S5 Iout VTT (max) (A) 3 Iq (typ) (mA) 18 Output VREF, VTT Vin (min) (V) 0.9 Vin (max) (V) 3.5 Features Complete Solution, Shutdown Pin for S3 Rating Space Operating temperature range (°C) -55 to 125 Regulator type Linear Regulator Vin bias (max) (V) 3.5 Vin bias (min) (V) 2.375 Vout VTT (min) (V) 0.6
HTSSOP (DAP) 32 89.1 mm² (11 mm × 8.1 mm)
  • QMLP TPS7H3302-SP standard microcircuit drawing (SMD) available, 5962R14228
  • Space Ehanced Plastic Vendor item drawing available, VID V62/22615
  • Total ionizing dose (TID) charactericized
    • Radiation hardness assured (RHA) qualified up to total ionizing dose (TID) 100 krad(Si) or 50 krad(Si)
  • Single-Event Effects (SEE) Charactericized
    • Single event latch-up (SEL), single event gate rupture (SEGR), single event burnout (SEB) immune up to LET = 70 MeV-cm2 /mg
    • Single event transient (SET), single event functional interrupt (SEFI), and single event upset (SEU) characterized up to 70 MeVcm2 /mg
  • Supports DDR, DDR2, DDR3, DDR3L, and DDR4 termination applications
  • Input voltage: supports a 2.5-V and 3.3-V rail
  • Separate low-voltage input (VLDOIN) down to 0.9 V for improved power efficiency
  • 3-A sink and source termination regulator
  • Enable input and power-good output for power supply sequencing
  • VTT termination regulator
    • Output voltage range: 0.5 to 1.75 V
    • 3-A sink and source current
  • Integrated precision voltage divider network with sense input
  • Remote sensing (VTTSNS)
  • VTTREF buffered reference
    • 49% to 51% accuracy with respect to VDDQSNS (±3 mA)
    • ±10 mA sink and source current
  • Undervoltage lockout (UVLO) and overcurrent limit (OCL) functionality integrated
  • Plastic package
  • QMLP TPS7H3302-SP standard microcircuit drawing (SMD) available, 5962R14228
  • Space Ehanced Plastic Vendor item drawing available, VID V62/22615
  • Total ionizing dose (TID) charactericized
    • Radiation hardness assured (RHA) qualified up to total ionizing dose (TID) 100 krad(Si) or 50 krad(Si)
  • Single-Event Effects (SEE) Charactericized
    • Single event latch-up (SEL), single event gate rupture (SEGR), single event burnout (SEB) immune up to LET = 70 MeV-cm2 /mg
    • Single event transient (SET), single event functional interrupt (SEFI), and single event upset (SEU) characterized up to 70 MeVcm2 /mg
  • Supports DDR, DDR2, DDR3, DDR3L, and DDR4 termination applications
  • Input voltage: supports a 2.5-V and 3.3-V rail
  • Separate low-voltage input (VLDOIN) down to 0.9 V for improved power efficiency
  • 3-A sink and source termination regulator
  • Enable input and power-good output for power supply sequencing
  • VTT termination regulator
    • Output voltage range: 0.5 to 1.75 V
    • 3-A sink and source current
  • Integrated precision voltage divider network with sense input
  • Remote sensing (VTTSNS)
  • VTTREF buffered reference
    • 49% to 51% accuracy with respect to VDDQSNS (±3 mA)
    • ±10 mA sink and source current
  • Undervoltage lockout (UVLO) and overcurrent limit (OCL) functionality integrated
  • Plastic package

The TPS7H3302 is a radiation-hardend double data rate (DDR) 3-A termination regulator with built-in VTTREF buffer. The regulator is specifically designed to provide a complete, compact, low-noise solution for space DDR termination applications such as single board computers, solid state recorders, and payload processing.

The TPS7H3302 supports DDR VTT termination applications using DDR, DDR2, DDR3, DDR3L, and DDR4. The fast transient response of the TPS7H3302 VTT regulator allows for a very stable supply during read/write conditions. The TPS7H3302 also includes a built-in VTTREF supply that tracks VTT to further reduce the solution size. To enable simple power sequencing, both an enable input and a power-good output (PGOOD) have been integrated into the TPS7H3302. The enable signal can also be used to discharge VTT during suspend to RAM (S3) power down mode.

The TPS7H3302 is a radiation-hardend double data rate (DDR) 3-A termination regulator with built-in VTTREF buffer. The regulator is specifically designed to provide a complete, compact, low-noise solution for space DDR termination applications such as single board computers, solid state recorders, and payload processing.

The TPS7H3302 supports DDR VTT termination applications using DDR, DDR2, DDR3, DDR3L, and DDR4. The fast transient response of the TPS7H3302 VTT regulator allows for a very stable supply during read/write conditions. The TPS7H3302 also includes a built-in VTTREF supply that tracks VTT to further reduce the solution size. To enable simple power sequencing, both an enable input and a power-good output (PGOOD) have been integrated into the TPS7H3302. The enable signal can also be used to discharge VTT during suspend to RAM (S3) power down mode.

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관심 가지실만한 유사 제품

open-in-new 대안 비교
비교 대상 장치와 동일한 기능을 지원하는 핀 대 핀.
TPS7H3302-SEP 활성 Radiation-tolerant, 2.3V to 3.5V input, 3A sink and source DDR-termination LDO regulator -SEP plastic package with lower TID & SEE radiation performance
다른 핀 출력을 지원하지만 비교 대상 장치와 동일한 기능.
TPS7H3301-SP 활성 Radiation-hardened, QML-V, 2.3V to 3.5V input, 3A sink and source DDR termination LDO regulator QMLV ceramic package with same radiation performance

기술 자료

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14개 모두 보기
상위 문서 유형 직함 형식 옵션 최신 영어 버전 다운로드 날짜
* 데이터 시트 TPS7H3302-SP and TPS7H3302-SEP 3-A DDR Radiation Hardened Termination Regulator datasheet (Rev. B) PDF | HTML 2023. 12. 14
* 방사능 및 안정성 보고서 TPS7H3302-SEP and TPS7H3302-SP Neutron Displacement Damage Characterization Test Report (Rev. A) 2024. 2. 16
* 방사능 및 안정성 보고서 TPS7H3301-SP and TPS7H3302-SP Single-Event Effects Radiation Report (Rev. C) 2024. 1. 26
* 방사능 및 안정성 보고서 TPS7H3302-QMLP Total Ionizing Dose (TID) Report 2023. 11. 17
* SMD TPS7H3302-SP SMD 5962-14228 2023. 12. 21
선택 가이드 TI Space Products (Rev. L) 2026. 3. 27
Application brief DLA Approved Optimizations for QML Products (Rev. C) PDF | HTML 2025. 6. 17
애플리케이션 노트 Heavy Ion Orbital Environment Single-Event Effects Estimations (Rev. B) PDF | HTML 2025. 6. 10
추가 자료 TI Engineering Evaluation Units vs. MIL-PRF-38535 QML Class V Processing (Rev. B) 2025. 2. 20
애플리케이션 노트 QML flow, its importance, and obtaining lot information (Rev. C) 2023. 8. 30
애플리케이션 노트 DLA Standard Microcircuit Drawings (SMD) and JAN Part Numbers Primer 2020. 8. 21
애플리케이션 노트 DDR VTT Power Solutions: A Competitive Analysis (Rev. A) 2020. 7. 9
e북 Radiation Handbook for Electronics (Rev. A) 2019. 5. 21
애플리케이션 노트 External Soft-Start Circuit for TPS7H3301-SP Power-Up Sequencing Applications 2016. 7. 7

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

평가 보드

TPS7H3302EVM — TPS7H3302 3A 싱크 및 소스 DDR 종단 LDO 레귤레이터용 평가 모듈

TPS7H3302(LP085) 평가 모듈(EVM)은 내방사선 DDR, DDR2, DDR3, DDR3L 및 DDR4 종단 저손실(LDO) 레귤레이터인 TPS7H3302-SEP의 성능과 특성을 평가하기 위한 플랫폼입니다.

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TPS7H3302-SEP PSpice Model

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