홈 스위치 및 멀티플렉서 아날로그 스위치 및 멀티플렉서 프로토콜/버스 스위치 및 멀티플렉서
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스위치 및 멀티플렉서
아날로그 스위치 및 멀티플렉서
프로토콜/버스 스위치 및 멀티플렉서

SN74CB3Q3306A-EP

활성

듀얼 FET 버스 스위치 2.5V/3.3V 저전압 고대역폭 버스 스위치

지금 주문하기
데이터 시트

SN74CB3Q3306A-EP

활성
데이터 시트 지금 주문하기

제품 상세 정보

Protocols Analog, I2C, UART Configuration 1:1 SPST Number of channels 2 Bandwidth (MHz) 500 Ron (typ) (mΩ) 5000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 5.5 Supply current (typ) (µA) 250 Operating temperature range (°C) -55 to 125 Crosstalk (dB) No ESD CDM (kV) 1 Input/output continuous current (max) (mA) 64 COFF (typ) (pF) 3.5 CON (typ) (pF) 8 OFF-state leakage current (max) (µA) 1 Ron (max) (mΩ) 80000 VIH (min) (V) 2 VIL (max) (V) 0.8 Rating HiRel Enhanced Product
Protocols Analog, I2C, UART Configuration 1:1 SPST Number of channels 2 Bandwidth (MHz) 500 Ron (typ) (mΩ) 5000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 5.5 Supply current (typ) (µA) 250 Operating temperature range (°C) -55 to 125 Crosstalk (dB) No ESD CDM (kV) 1 Input/output continuous current (max) (mA) 64 COFF (typ) (pF) 3.5 CON (typ) (pF) 8 OFF-state leakage current (max) (µA) 1 Ron (max) (mΩ) 80000 VIH (min) (V) 2 VIL (max) (V) 0.8 Rating HiRel Enhanced Product
TSSOP (PW) 8 19.2 mm² (3 mm × 6.4 mm)
  • High-Bandwidth Data Path (up to 500 MHz(1))
  • 5-V-Tolerant I/Os With Device Powered Up or Powered Down
  • Low and Flat ON-State Resistance (ron)
    Characteristics Over Operating Range (ron = 4 Ω Typ)
  • Rail-to-Rail Switching on Data I/O Ports
    • 0- to 5-V Switching With 3.3-V VCC
    • 0- to 3.3-V Switching With 2.5-V VCC
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low Input/Output Capacitance Minimizes
    Loading and Signal Distortion
    (Cio(OFF) = 3.5 pF Typ)
  • Fast Switching Frequency (f OE  = 20 MHz Max)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 0.25 mA Typ)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0- to 5-V Signaling Levels
    (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL or
    5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA
    Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: USB Interface,
    Differential Signal Interface, Bus Isolation, Low-Distortion
    Signal Gating

SUPPORTS DEFENSE, AEROSPACE, AND MEDICAL APPLICATIONS

  • Controlled Baseline
  • One Assembly and Test Site
  • One Fabrication Site
  • Available in Military (–55°C to 125°C)
    Temperature Range
  • Extended Product Life Cycle
  • Extended Product-Change Notification
  • Product Traceability

(1) For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.
  • High-Bandwidth Data Path (up to 500 MHz(1))
  • 5-V-Tolerant I/Os With Device Powered Up or Powered Down
  • Low and Flat ON-State Resistance (ron)
    Characteristics Over Operating Range (ron = 4 Ω Typ)
  • Rail-to-Rail Switching on Data I/O Ports
    • 0- to 5-V Switching With 3.3-V VCC
    • 0- to 3.3-V Switching With 2.5-V VCC
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low Input/Output Capacitance Minimizes
    Loading and Signal Distortion
    (Cio(OFF) = 3.5 pF Typ)
  • Fast Switching Frequency (f OE  = 20 MHz Max)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 0.25 mA Typ)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0- to 5-V Signaling Levels
    (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL or
    5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA
    Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: USB Interface,
    Differential Signal Interface, Bus Isolation, Low-Distortion
    Signal Gating

SUPPORTS DEFENSE, AEROSPACE, AND MEDICAL APPLICATIONS

  • Controlled Baseline
  • One Assembly and Test Site
  • One Fabrication Site
  • Available in Military (–55°C to 125°C)
    Temperature Range
  • Extended Product Life Cycle
  • Extended Product-Change Notification
  • Product Traceability

(1) For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.

The SN74CB3Q3306A is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3306A provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q3306A is organized as two 1-bit switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is low, the associated 1-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CB3Q3306A is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3306A provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q3306A is organized as two 1-bit switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is low, the associated 1-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
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기술 자료

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5개 모두 보기
상위 문서 유형 직함 형식 옵션 최신 영어 버전 다운로드 날짜
* 데이터 시트 DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH datasheet 2013. 12. 17
* 방사능 및 안정성 보고서 CCB3Q3306AMPWREP Reliability Report 2014. 12. 16
* VID SN74CB3Q3306A-EP VID V6214606 2016. 6. 21
애플리케이션 노트 Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 2022. 6. 2
애플리케이션 노트 Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 2021. 12. 1

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