DRV8363-Q1

활성

정확한 전류 감지를 지원하는 차량용 24V~48V 배터리 3상 게이트 드라이버 유닛

제품 상세 정보

Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 8 Vs ABS (max) (V) 85 Features Current sense Amplifier, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 125
Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 8 Vs ABS (max) (V) 85 Features Current sense Amplifier, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 125
VQFN (RGZ) 48 49 mm² 7 x 7
  • AEC-Q100 Test Guidance for automotive applications
    • Device ambient temperature: –40°C to +125°C
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 8 to 85V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Supports 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external cut-off or reverse polarity protection circuit
  • Smart Gate Drive architecture
    • 15-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
    • Closed-loop automatic deadtime insertion based on gate-source voltage monitoring
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • 1mV low input offset across temperature
    • 4-level adjustable gain
    • Adjustable output bias to support unidirectional or bidirectional sensing
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • Dedicated ASCIN pin to control motor braking (active short circuit)
  • 6x, 3x, 1x, and Independent PWM Modes
  • Supports 3.3V and 5V Logic Inputs
  • Integrated protection features
    • Battery and power supply voltage monitors
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin
  • AEC-Q100 Test Guidance for automotive applications
    • Device ambient temperature: –40°C to +125°C
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 8 to 85V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Supports 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external cut-off or reverse polarity protection circuit
  • Smart Gate Drive architecture
    • 15-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
    • Closed-loop automatic deadtime insertion based on gate-source voltage monitoring
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • 1mV low input offset across temperature
    • 4-level adjustable gain
    • Adjustable output bias to support unidirectional or bidirectional sensing
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • Dedicated ASCIN pin to control motor braking (active short circuit)
  • 6x, 3x, 1x, and Independent PWM Modes
  • Supports 3.3V and 5V Logic Inputs
  • Integrated protection features
    • Battery and power supply voltage monitors
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin

The DRV8363-Q1 is an integrated smart gate driver for 48V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8363-Q1 generates the correct gate drive voltages using an external 12V supply and an integrated bootstrap diode for the high-side MOSFETs. The Smart Gate Drive architecture supports configurable peak gate drive current from 16mA up to 1A source and 2A sink. The DRV8363-Q1 can operate with a wide input range from 8V to 85V at the motor connection. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control and provides overdrive gate drive voltage of external switches.

The DRV8363-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurements.

A wide range of diagnostics and protection features are integrated with the DRV8363-Q1 enables a robust motor drive system design and helps eliminate the need of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

The DRV8363-Q1 is an integrated smart gate driver for 48V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8363-Q1 generates the correct gate drive voltages using an external 12V supply and an integrated bootstrap diode for the high-side MOSFETs. The Smart Gate Drive architecture supports configurable peak gate drive current from 16mA up to 1A source and 2A sink. The DRV8363-Q1 can operate with a wide input range from 8V to 85V at the motor connection. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control and provides overdrive gate drive voltage of external switches.

The DRV8363-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurements.

A wide range of diagnostics and protection features are integrated with the DRV8363-Q1 enables a robust motor drive system design and helps eliminate the need of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

다운로드 스크립트와 함께 비디오 보기 동영상

기술 자료

star =TI에서 선정한 이 제품의 인기 문서
검색된 결과가 없습니다. 검색어를 지우고 다시 시도하십시오.
5개 모두 보기
유형 직함 날짜
* Data sheet DRV8363-Q1 48V Battery Three-Phase Smart Gate Driver with Accurate Current Sensing and Advanced Monitoring datasheet (Rev. A) PDF | HTML 2025/12/16
Application brief Understanding Gate Driver Slew Rate Control, MOSFET Switching Optimization and Protection Features (Rev. A) PDF | HTML 2025/12/11
Application note 48V 차량용 시스템을 위한 모터 드라이버 회전율 고려 사항 PDF | HTML 2025/12/01
Technical article 액티브 단락 기술로 전기 자전거의 안전성 향상 PDF | HTML 2025/09/12
Certificate DRV8363-Q1EVM EU Declaration of Conformity (DoC) 2025/04/11

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

평가 보드

DRV8363-Q1EVM — DRV8363-Q1 평가 모듈

DRV8363-Q1EVM은 BLDC 모터용 DRV8363-Q1 게이트 드라이버를 기반으로 하는 30A, 3상 브러시리스 DC 드라이브 단계입니다.

EVM을 사용하면 사다리꼴 전류 및 제어를 사용하여 BLDC 모터를 구동하는 DRV8363-Q1 장치의 빠른 평가를 수행할 수 있습니다.

사용자 피드백을 위해 모든 전원 공급 장치의 상태 LED와 장애 표시등이 포함되어 있습니다. 이 키트에는 C2000 론치패드(LAUNCHXL-F280049C)가 필요하며 DRV8363-Q1을 제어하고 오류를 모니터링하고 보고하는 데 사용됩니다.

(...)

사용 설명서: PDF | HTML
TI.com에서 구매 불가
레퍼런스 디자인

TIDA-020094 — 48V zone reference design

This reference design demonstrates trends in advanced automotive 48V low voltage rail architectures. The design includes the 48V backbone architecture and 48V to 12V power conversion. The reference design highlights 48V load drivers across key products. These products include high side switches (...)
Design guide: PDF
패키지 CAD 기호, 풋프린트 및 3D 모델
VQFN (RGZ) 48 Ultra Librarian

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

지원 및 교육

TI 엔지니어의 기술 지원을 받을 수 있는 TI E2E™ 포럼

콘텐츠는 TI 및 커뮤니티 기고자에 의해 "있는 그대로" 제공되며 TI의 사양으로 간주되지 않습니다. 사용 약관을 참조하십시오.

품질, 패키징, TI에서 주문하는 데 대한 질문이 있다면 TI 지원을 방문하세요. ​​​​​​​​​​​​​​

동영상