DRV3233-Q1
- AEC-Q100 qualified
for automotive applications - Temperature options:
- DRV3233E: –40°C to +150°C, TA
- DRV3233Q: –40°C to +125°C,TA
-
Functional Safety-Compliant
- Developed for functional safety applications
- Documentation to aid ISO 26262 system design available
- Systematic capability up to ASIL D targeted
- Three phase half-bridge gate driver
- Drives six N-channel MOSFETs (NMOS)
- 4.5 to 60V wide operating voltage range
- Bootstrap architecture for high-side gate driver
- Charge pump for 50mA average gate current
- 100% PWM duty cycle support
- Overdrive supply of external switches
- Smart Gate Drive architecture
- 45-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
- Three-step dynamic drive current control
- Soft shutdown for power stage protection
- Low-side Current Sense Amplifier
- Sub-1mV low input offset across temperature
- 9-level adjustable gain
- SPI-based detailed configuration and diagnostics
- DRVOFF pin to disable driver independently
- High voltage wake up pin (nSLEEP)
- Multiple PWM
interface options available
- 6x, 3x, 1x PWM Modes
- PWM over SPI
- Supports 3.3V, and 5V Logic Inputs
- Optional programmable OTP for reset settings
- Advanced and configurable protection features
- Battery and power supply voltage monitors
- Phase feedback comparator
- MOSFET VDS and Rsense over current monitors
- Analog Built-In-Self-Test, Clock monitors
- Fault condition indicator pin
The DRV3233-Q1 is an integrated smart gate driver for 12V and 24V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV3233-Q1 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.8mA up to 1A source and 2A sink. The DRV3233-Q1 can operate from a single power supply with a wide input range from 4.5 to 60V. A trickle charge pump enables 100% PWM duty cycle control, and provides overdrive supply voltage for external switches.
The DRV3233-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement.
A wide range of diagnostics and protection features integrated in the DRV3233-Q1 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.
관심 가지실만한 유사 제품
비교 대상 장치와 유사한 기능.
기술 자료
| 상위 문서 | 유형 | 직함 | 형식 옵션 | 최신 영어 버전 다운로드 | 날짜 |
|---|---|---|---|---|---|
| * | 데이터 시트 | DRV3233-Q1 Automotive 24/12V Battery 3-Phase Gate Driver Unit With Accurate Current Sensing and Enhanced Diagnostics datasheet (Rev. F) | PDF | HTML | 2026. 5. 27 | |
| Application brief | Understanding Gate Driver Slew Rate Control, MOSFET Switching Optimization and Protection Features (Rev. A) | PDF | HTML | 2025. 12. 11 | ||
| Application brief | Striking a Balance: Automotive Designs for Enhanced Efficiency and EMI Control | PDF | HTML | 2023. 10. 2 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
TIDA-020106 — EMB(전기 기계식 제동) 레퍼런스 설계
EMB(전기 기계식 제동)는 자동차의 전기화와 지능화를 목표로 하는 새로운 유형의 제동 기술로, 고급 자율 주행을 위한 전반적인 비용 절감, 더 빠른 응답, 더 정밀한 작동을 제공합니다. 이 레퍼런스 설계는 완전한 기능을 갖춘 EMB 설계를 보여줍니다. 이 가이드에는 하드웨어, 소프트웨어 및 기능 안전 설계가 모두 설명되어 있습니다. EPS(전동 파워 스티어링)는 EMB와 매우 유사한 주요 구성 요소를 가지고 있으므로, 이 레퍼런스 설계는 EPS에도 사용할 수 있습니다.
| 패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
|---|---|---|
| HTQFP (PHP) | 48 | Ultra Librarian |
| VQFN (RGZ) | 48 | Ultra Librarian |
| WQFN (RRY) | 32 | Ultra Librarian |