DRV8161
- Drives two N-channel MOSFETs in half-bridge configuration
- High-side MOSFET source/drain up to 102V (absolute max)
- 8V (5V DRV8162L) to 20V gate drive power supply
- Integrated bootstrap diode
- 16-level gate drive peak current
- 16mA - 1000mA source current
- 32mA - 2000mA sink current
- Source-sink current ratio 1:1, 1:2, 1:3
- Adjustable PWM dead time insertion 20ns - 400ns
- Robust design for motor phase (SH) switching
- Slew rate 20V/ns
- Negative transient voltage -20V
- 2-A strong gate pull down
- Split gate drive supply inputs for redundant shutdown (DRV8162, DRV8162L)
- Low-offset current sense amplifier (DRV8161)
- Adjustable gain (5, 10, 20, 40 V/V)
- Flexible PWM control interface; 2-pin PWM, and independent PWM mode
- 13-level VDS over current threshold
- Independent shutdown pin (nDRVOFF)
- Gate driver soft shutdown sequence
- Integrated protection features
- GVDD under voltage (GVDDUV)
- Bootstrap under voltage (BST_UV)
- MOSFET over current protection (VDS)
- Shoot through protection
- Thermal shutdown (OTSD)
- Fault condition indicator (nFAULT)
- Supports 3.3V, and 5V Logic Inputs
The DRV816x devices are half-bridge gate drivers capable of driving high-side and low-side N-channel MOSFETs. The gate drive voltages are generated from the GVDD supply pin and the integrated bootstrap circuit is used to drive the high-side FET up to 102V drain. The Smart Gate Drive architecture supports 16-level (48 combination) gate drive peak current up to 1A source and 2A sink, and a built-in timing control of gate drive current. The devices can be used to drive various types of loads including brushless/brushed DC motors, PMSM, stepper motors, SRM, and solenoids.
Internal protection functions are provided for supply undervoltage, FET over-current, and die over temperature. The nFAULT pin indicates fault events detected by the protection features. The nDRVOFF pin initiates power stage shutdown independent from PWM control. The DRV8162 and DRV8162L devices offer split power supply architecture to assist safe torque off (STO) function.
Many device parameters including gate drive current, dead time, PWM control interface, and over current detection are configurable with a few passive components connected to device pins. An integrated low-side current sense amplifier (DRV8161) provides current measurement information back to the controller.
技術資料
| 種類 | タイトル | 最新の英語版をダウンロード | 日付 | |||
|---|---|---|---|---|---|---|
| * | データシート | DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier データシート | PDF | HTML | 2024年 5月 6日 | ||
| EVM ユーザー ガイド (英語) | DRV8161 Evaluation Module User's Guide | PDF | HTML | 2024年 4月 26日 |
設計と開発
その他のアイテムや必要なリソースを参照するには、以下のタイトルをクリックして詳細ページをご覧ください。
DRV8161EVM — DRV8161 の評価基板
| パッケージ | ピン数 | ダウンロード |
|---|---|---|
| VSSOP (DGS) | 20 | オプションの表示 |
購入と品質
- RoHS
- REACH
- デバイスのマーキング
- リード端子の仕上げ / ボールの原材料
- MSL 定格 / ピーク リフロー
- MTBF/FIT 推定値
- 材質成分
- 認定試験結果
- 継続的な信頼性モニタ試験結果
- ファブの拠点
- 組み立てを実施した拠点