The TLC27L2x and TLC27L7 dual op amps
combine a wide range of input offset-voltage grades with low offset-voltage drift,
high input impedance, extremely low power, and high gain. These devices use the
Texas Instruments silicon-gate LinCMOS™ technology,
providing offset-voltage stability far exceeding the stability with conventional
metal-gate processes.
Four offset voltage grades are
available (C-suffix and I-suffix types), ranging from the low-cost TLC27L2 (10mV) to
the high-precision TLC27L7 (1000µV). The extremely high input impedance and low bias
currents, along with good common-mode rejection and supply-voltage rejection, and
low power consumption, make these devices a good choice for new state-of-the-art
designs and upgrading existing designs.
In general, many features associated
with bipolar technology are available in LinCMOS operational amplifiers, without the
power penalties of bipolar technology. General applications such as transducer
interfacing, analog calculations, amplifier blocks, active filters, and signal
buffering are all easily designed with the TLC27Lx. The devices also exhibit
low-voltage and single-supply operation, making them an excellent choice for remote
and inaccessible battery-powered applications. The common-mode input-voltage range
includes the negative rail.
The TLC27Lx incorporate internal
ESD-protection circuits that prevent functional failures at voltages up to 2000V as
tested under MIL-STD-883C, Method 3015.2. Exercise care when handling these devices
because exposure to ESD potentially degrades device parametric performance.
C-suffix devices are characterized for
operation from 0°C to 70°C, I-suffix devices from −40°C to +85°C, and M-suffix
devices over the full military temperature range of −55°C to +125°C.
The TLC27L2x and TLC27L7 dual op amps
combine a wide range of input offset-voltage grades with low offset-voltage drift,
high input impedance, extremely low power, and high gain. These devices use the
Texas Instruments silicon-gate LinCMOS™ technology,
providing offset-voltage stability far exceeding the stability with conventional
metal-gate processes.
Four offset voltage grades are
available (C-suffix and I-suffix types), ranging from the low-cost TLC27L2 (10mV) to
the high-precision TLC27L7 (1000µV). The extremely high input impedance and low bias
currents, along with good common-mode rejection and supply-voltage rejection, and
low power consumption, make these devices a good choice for new state-of-the-art
designs and upgrading existing designs.
In general, many features associated
with bipolar technology are available in LinCMOS operational amplifiers, without the
power penalties of bipolar technology. General applications such as transducer
interfacing, analog calculations, amplifier blocks, active filters, and signal
buffering are all easily designed with the TLC27Lx. The devices also exhibit
low-voltage and single-supply operation, making them an excellent choice for remote
and inaccessible battery-powered applications. The common-mode input-voltage range
includes the negative rail.
The TLC27Lx incorporate internal
ESD-protection circuits that prevent functional failures at voltages up to 2000V as
tested under MIL-STD-883C, Method 3015.2. Exercise care when handling these devices
because exposure to ESD potentially degrades device parametric performance.
C-suffix devices are characterized for
operation from 0°C to 70°C, I-suffix devices from −40°C to +85°C, and M-suffix
devices over the full military temperature range of −55°C to +125°C.