Produktdetails

Rating Catalog Integrated isolated power No Number of channels 2 Forward/reverse channels 2 forward / 0 reverse Data rate (max) (Mbps) 50 Protocols GPIO, PWM Propagation delay time (typ) (ns) 11 Isolation rating Functional CMTI (min) (kV/µs) 100 Default output High, Low Creepage (min) (mm) 2.2 Current consumption per channel (1 Mbps) (typ) (mA) 1.8 Operating temperature range (°C) -40 to 125 Clearance (min) (mm) 2.2
Rating Catalog Integrated isolated power No Number of channels 2 Forward/reverse channels 2 forward / 0 reverse Data rate (max) (Mbps) 50 Protocols GPIO, PWM Propagation delay time (typ) (ns) 11 Isolation rating Functional CMTI (min) (kV/µs) 100 Default output High, Low Creepage (min) (mm) 2.2 Current consumption per channel (1 Mbps) (typ) (mA) 1.8 Operating temperature range (°C) -40 to 125 Clearance (min) (mm) 2.2
VSON (REU) 8 6 mm² (3 mm × 2 mm) SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • Dual channel, CMOS output functional isolators
  • 50Mbps data rate
  • Robust SiO2 isolation barrier with ±150kV/µs typical CMTI
  • Functional Isolation (8-REU):
    • 450VRMS, 637VDC working voltage
    • 2000VRMS, 2828VDC transient voltage (60s)
  • Functional Isolation (8-D):
    • 450VRMS, 637VDC working voltage
    • 2000VRMS, 2828VDC transient voltage (60s)
  • Available in a compact 8-REU package with >2.2mm creepage
  • Wide supply range: 1.71V to 1.89V and 2.25V to 5.5V
  • 1.71V to 5.5V level translation
  • Default output High (ISO652x) and Low (ISO652xF) Options
  • Wide temperature range: –40°C to 125°C
  • 1.8mA per channel typical at 1Mbps at 3.3V
  • Low propagation delay: 11ns typical at 3.3V
  • Robust electromagnetic compatibility (EMC)
    • System-Level ESD, EFT, and surge immunity
    • Ultra-low emissions
  • Leadless-DFN (8-REU) package and Narrow-SOIC (8-D) package options
  • Dual channel, CMOS output functional isolators
  • 50Mbps data rate
  • Robust SiO2 isolation barrier with ±150kV/µs typical CMTI
  • Functional Isolation (8-REU):
    • 450VRMS, 637VDC working voltage
    • 2000VRMS, 2828VDC transient voltage (60s)
  • Functional Isolation (8-D):
    • 450VRMS, 637VDC working voltage
    • 2000VRMS, 2828VDC transient voltage (60s)
  • Available in a compact 8-REU package with >2.2mm creepage
  • Wide supply range: 1.71V to 1.89V and 2.25V to 5.5V
  • 1.71V to 5.5V level translation
  • Default output High (ISO652x) and Low (ISO652xF) Options
  • Wide temperature range: –40°C to 125°C
  • 1.8mA per channel typical at 1Mbps at 3.3V
  • Low propagation delay: 11ns typical at 3.3V
  • Robust electromagnetic compatibility (EMC)
    • System-Level ESD, EFT, and surge immunity
    • Ultra-low emissions
  • Leadless-DFN (8-REU) package and Narrow-SOIC (8-D) package options

The ISO652x devices are high-performance, dual-channel functional isolators designed for cost sensitive, space constrained applications that require isolation for non-safety applications. The isolation barrier supports a working voltage of 450VRMS / 637VDC and transient over voltages of 2000VRMS / 2828VDC.

The devices provide high electromagnetic immunity and low emissions at low power consumption, while isolating CMOS or LVCMOS digital I/Os. Each isolation channel has a logic input and output buffer separated by TI’s double capacitive silicon dioxide (SiO2) insulation barrier. ISO6520 has two isolation channels with both channels in the same direction. ISO6521 has two isolation channels with one channel in each direction. In the event of input power or signal loss, the default output is high for devices without suffix F and low for devices with suffix F. See Device Functional Modes section for further details.

These devices help prevent noise currents on data buses, such as UART, SPI, RS-485, RS-232, and CAN from damaging sensitive circuitry. Through chip design and layout techniques, the electromagnetic compatibility of the devices have been significantly enhanced to ease system-level ESD and emissions compliance.

The ISO652x devices are high-performance, dual-channel functional isolators designed for cost sensitive, space constrained applications that require isolation for non-safety applications. The isolation barrier supports a working voltage of 450VRMS / 637VDC and transient over voltages of 2000VRMS / 2828VDC.

The devices provide high electromagnetic immunity and low emissions at low power consumption, while isolating CMOS or LVCMOS digital I/Os. Each isolation channel has a logic input and output buffer separated by TI’s double capacitive silicon dioxide (SiO2) insulation barrier. ISO6520 has two isolation channels with both channels in the same direction. ISO6521 has two isolation channels with one channel in each direction. In the event of input power or signal loss, the default output is high for devices without suffix F and low for devices with suffix F. See Device Functional Modes section for further details.

These devices help prevent noise currents on data buses, such as UART, SPI, RS-485, RS-232, and CAN from damaging sensitive circuitry. Through chip design and layout techniques, the electromagnetic compatibility of the devices have been significantly enhanced to ease system-level ESD and emissions compliance.

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* Datenblatt ISO652x General Purpose Dual-Channel Functional Isolators datasheet (Rev. C) PDF | HTML 19.08.2025
Whitepaper Shrinking Solution Size and Cost With Functional Isolation PDF | HTML 22.08.2024

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ISO6521REUEVM — ISO6521 Evaluierungsmodul für zweikanaligen funktionalen Isolator für Digitalsignale

ISO6521REUEVM ist ein Evaluierungsmodul (EVM) zur Evaluierung des Zweikanal-Funktionsisolators ISO6521 im 8-poligen DFN-Gehäuse. Das EVM verfügt über zusätzliche Footprints. Das gibt dem Benutzer die Flexibilität, Komponenten hinzuzufügen, um eine Vielzahl gängiger Anwendungen zu testen. Das EVM (...)

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