14-pin (D) package image

TLC2202CD 正在供货

双通道低噪音精密轨至轨运算放大器

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定价

数量 价格
+

其他包装数量 | 包装选项 这些产品完全相同,仅包装类型不同

TLC2202CDR 正在供货 custom-reels 定制 可提供定制卷带
包装数量 | 包装 2,500 | LARGE T&R
库存
数量 | 价格 1ku | +

质量信息

等级 Catalog
RoHS
REACH
引脚镀层/焊球材料 NIPDAU
MSL 等级/回流焊峰值温度 Level-1-260C-UNLIM
质量、可靠性
和封装信息

包含信息:

  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
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更多制造信息

包含信息:

  • 制造厂地点
  • 封装厂地点
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出口管制分类

*仅供参考

  • 美国 ECCN:EAR99

封装信息

封装 | 引脚 SOIC (D) | 14
工作温度范围 (°C) 0 to 70
包装数量 | 包装 50 | TUBE

TLC2202 的特性

  • B Grade Is 100% Tested for Noise
    • 30 nV/Hz Max at f = 10 Hz
    • 12 nV/Hz Max at f = 1 kHz
  • Low Input Offset Voltage . . . 500 µV Max
  • Excellent Offset Voltage Stability With Temperature . . . 0.5 µV/°C Typ
  • Rail-to-Rail Output Swing
  • Low Input Bias Current
    • 1 pA Typ at TA = 25°C
  • Common-Mode Input Voltage Range Includes the Negative Rail
  • Fully Specified For Both Single-Supply and Split-Supply Operation

Advanced LinCMOS is a trademark of Texas Instruments Incorporated.
All other trademarks are the property of their respective owners.

TLC2202 的说明

The TLC220x, TLC220xA, TLC220xB, and TLC220xY are precision, low-noise operational amplifiers using Texas Instruments Advanced LinCMOS™ process. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The Advanced LinCMOS™ process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.

The combination of excellent DC and noise performance with a common-mode input voltage range that includes the negative rail makes these devices an ideal choice for high-impedance, low-level signal-conditioning applications in either single-supply or split-supply configurations.

The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up. In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in degradation of the parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.

定价

数量 价格
+

其他包装数量 | 包装选项 这些产品完全相同,仅包装类型不同

TLC2202CDR 正在供货 custom-reels 定制 可提供定制卷带
包装数量 | 包装 2,500 | LARGE T&R
库存
数量 | 价格 1ku | +

包装方式

您可以根据器件数量选择不同的包装方式,包括完整卷带、定制卷带、剪切带、管装或托盘。

定制卷带是从整盘卷带上剪下来的具有连续长度的剪切带,是一种可以对特定数量提供产品批次及生产日期跟踪的包装方式。根据行业标准,使用黄铜垫片在剪切带两端各连接一个 18 英寸的引带和尾带,以直接送入自动组装机。涉及定制卷带的 TI 订单将包含卷带费用。

剪切带是从整盘卷带上剪下来的特定长度的编带。根据所申请器件数量的不同,TI 可能会使用多条剪切带或多个盒子进行包装。

TI 通常会根据库存情况选择将管装托盘器件以盒装或者管装或托盘形式发货。所有器件均会按照 TI 内部规定的静电放电和湿敏等级保护要求进行包装。

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可提供批次和生产日期代码选项

您可在购物车中添加器件数量以开始结算流程,并查看现有库存中可选择批次或生产日期代码的选项。

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