BQ2201

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用于 1 个 SRAM 组的 SRAM 非易失性控制器 IC

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数据表

document-pdfAcrobat SRAM Nonvolatile Controller Unit 数据表 (英语)

BQ2201

正在供货

数据表

立即订购

产品详情

Features

1-Bank SRAM, CMOS, Non-volatile controller, Write-protection

Operating current (typ) (µA)

3000

Rating

Catalog

Vin (max) (V)

5.5

Operating temperature range (°C)

-40 to 85

Features

1-Bank SRAM, CMOS, Non-volatile controller, Write-protection

Operating current (typ) (µA)

3000

Rating

Catalog

Vin (max) (V)

5.5

Operating temperature range (°C)

-40 to 85

SOIC (D)

29.4 mm² 4.9 x 6

Power monitoring and switching for 3-volt battery-backup applications
Write-protect control
3-volt primary cell inputs
Less than 10ns chip-enable propagation delay
5% or 10% supply operation

Power monitoring and switching for 3-volt battery-backup applications
Write-protect control
3-volt primary cell inputs
Less than 10ns chip-enable propagation delay
5% or 10% supply operation

The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile read/write memory.

A precision comparator monitors the 5V V_CC input for an out-of-tolerance condition. When out of tolerance is detected, a conditioned chip-enable output is forced inactive to write-protect any standard CMOS SRAM.

During a power failure, the external SRAM is switched from the V_CC supply to one of two 3V backup supplies. On a subsequent power-up, the SRAM is write-protected until a power-valid condition exists.

The bq2201 is footprint- and timing-compatible with industry standards with the added benefit of a chip-enable propagation delay of less than 10ns.

The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile read/write memory.

The bq2201 is footprint- and timing-compatible with industry standards with the added benefit of a chip-enable propagation delay of less than 10ns.

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