半导体
1952
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TI buys Western Electric transistor license; enters 半导体
realm
1953
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SC Products division established
1954
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TI introduces first commercial silicon transistor
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First germanium high-frequency transistors produced
•
Regency Radio debuts, first commercial mass-produced transistor
product
1956
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Grown-diffused transistors developed
1957
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First silicon high-power transistors produced
•
First SC distributor sales program launched
1958
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Integrated circuit invented by Jack Kilby
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Explorer, first U.S. orbiting satellite, contains TI transistors
•
Diffused-base transistor process developed
•
Centralized Automatic Tester (CAT) transistor-testing machine
produced
1959
•
First commercial integrated circuit – Solid Circuits™
– produced
•
First Gallium Arsenide (GaAs) solar cells produced
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1961
•
Series 51 ICs produced, first digital logic IC family
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Epitaxial and Planar SC manufacturing processes implemented
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Special SC devices produced for Polaris missile
1962
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Series 52 ICs produced, linear circuits IC family
1964
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First plastic packaging of integrated circuits
•
TI-Kote™ silicon carbide coating developed
•
Series 54/74 Transistor-Transistor-Logic (TTL) ICs introduced
•
Zenith demonstrates hearing aid, first use of TI IC in consumer
device
1967
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Manufacturing transitions from 1.25” to 2.0” wafers
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TI533 IC tester put into operation
•
TIVICON camera tube developed
•
Discretionary wiring large-scale integration process developed
1968
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TI’s first Metal-On-Silicon (MOS) circuits produced
•
ECL integrated circuits produced
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Single-diffused SC process developed
1969
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Thermocompression bonding process developed
•
Large Scale Integration (LSI) designs introduced
•
Memory arrays developed
•
APOLLO Lunar Exploration Module contains TI components
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1971
•
Single-chip microprocessor invented
•
Single-chip “calculator on chip” invented (later
called microcontroller)
•
Series 54/74H ICs – high-power TTL logic family –
produced
•
Series 54/74L ICs – low-power TTL logic family –
produced
•
Series 54/74LS ICs – low-power Schottky logic family –
produced
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Series 54S Schottky logic family of ICs produced
1972
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ABACUS II integrated circuit wire bonder developed
1973
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4K dynamic random access memory (DRAM) IC developed
1974
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TMS1000 single-chip microcomputer (microcontroller) released
1975
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TMS9900 16-bit microprocessor chip released
•
First Integrated Injection Logic (I²L) put into use
•
First single-transistor memory cell produced
•
E-Beam lithography program launched
•
First Programmable Logic Array developed
1976
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First applications libraries for microprocessors developed
1977
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16K dynamic random access memory (DRAM) chip released
•
Production begins of magnetic bubble memory chips
•
16K electrically-programmed read-only memory (EPROM) chip
released
•
4K static random access memory (SRAM) chip released
•
DARPA job yields metallic membrane, Digital Micromirror Device
precursor
1978
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Single-chip speech synthesizer debuts in TI Speak & Spell™
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256K bubble memory chips produced
•
64K 5 volt-only DRAM chip released
•
16K static random access memory (SRAM) chip produced
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32K EPROM chip released
•
Etched leadframe IDEA technology developed
1979
•
Production begins of 64K dynamic random access memory (DRAM)
chip
•
Series 54/74AS ICs – Advanced Schottky logic family –
produced
•
Series 54ALS ICs – Advanced low-power Schottky logic family
– produced
•
Microcomputer/module business launched
•
Solar Energy technology developed
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1980
•
Gate array business launched
•
First Sonar autofocus technology developed with Polaroid
1981
•
TMS7000 8-bit microprocessor chip announced
•
64K dynamic random access memory (DRAM) chip enters full production
•
Charge-coupled device imagers (CCDs) delivered for space telescope
•
First 128 x 128 digital micromirror device (DMD) developed
1982
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Single-chip digital signal processor (DSP) announced
•
Charge-coupled device imagers (CCDs) delivered for Galileo
Mission
1984
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Manufacturing transitions to 6” wafers
•
Complementary metal-on-silicon (CMOS) gate arrays developed
with Fujitsu
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First business secured for programmable logic array technology
•
32000-series microprocessor chip developed with National 半导体
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Standard cell semi-custom ICs developed
•
First Multiport video RAM chip produced
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First DMD (digital micromirror device)-based printer produced
1985
•
Production begins of 256K dynamic random-access memory (DRAM)
chips
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Chips developed using 4MB DRAM trench cell
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List Processing (LISP) chip developed for AI applications
1986
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First 32-bit graphics DSP developed
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1-micron complementary (CMOS) gate arrays developed
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Production begins of 1MB DRAM chips
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Series 74HC ICs – CMOS logic family – produced
1988
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First 4MB dynamic random-access memory (DRAM) devices sampled
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TI and Hitachi sign 16MB DRAM joint development agreement
•
First hybrid silicon and gallium arsenide IC demonstrated
•
Fabrication of first quantum-effect transistor announced
•
First digital DMD produced
1989
•
Microelectronics Manufacturing Science Technology (MMST) contract
won
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1990
•
64MB dynamic random-access memory (DRAM) designed and demonstrated
•
4MB DRAM production enters ramp-up phase
•
16MB DRAM sampled
•
BiCMOS technology developed
•
Manufacturing transitions to 8” wafers
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Room-temperature resonant-tunneling transistor developed
•
Silicon-based monolithic digital micromirror device fabricated
1991
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4MB DRAM chip enters volume production
•
SuperSPARC™ reduced-instruction set computing (RISC)
chip produced
•
First light-emitting diode (LED) CMOS and GaAs chip demonstrated
1992
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TI 486 microprocessor chip released
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MicroSPARC™ single-chip processor introduced
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First large-screen color DMD projector demonstrated
1993
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Three-day IC manufacturing process demonstrated as part of
MMST contract
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TI and Hitachi announce agreement for joint development of
256MB DRAM
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First room-temperature quantum-effect IC demonstrated
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First high-resolution DMD projection demonstrated
1994
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Multimedia video processor chip introduced with DSP-RISC architectures
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TI, Hitachi announce TwinStar JV for advanced chip manufacturing
•
1394 serial bus wins “Most Significant Technology”
award at Fall COMDEX
1995
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Micro-dominant business units deployed
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TMS320C54x™ DSP chip family launched
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Dr. Hornbeck, DMD™ inventor, receives Eduard Rhein Award
1996
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First chip scale package, MicroStar Ball Grid Array, completed
1997
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TMS320C6x, first VLIW DSP, introduced with 1 GFLOPS performance
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Kilby Center dedicated, new $150 million R&D facility
•
TI inventors Hornbeck, Nelson receive Rank Prize Funds award
for DMD™
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First 56-Kbit modem from 3COM uses TI DSP solution
•
ANAM foundry operation begins production using ‘C10
technology
•
Power Trends subsidiary supplies electronics for Mars Pathfinder
mission
1998
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SC business establishes six new vertical business units
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World’s highest performance floating-point DSP, TMS320C6701,
introduced
•
DLP™ technology and inventor Larry Hornbeck receive
Emmy awards
•
Bond-Over-Active Circuits and Bond-Over-ESD technology introduced
1999
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Two more vertical business units established
•
eXpressDSP™ Realtime Software technology released
•
First DSP-based printer solution – xStream DSP technology
– introduced
•
First DSP-optimized analog-to-digital converter, THS1206, introduced
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DSP-based solution provides secure downloading to portable devices
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Nokia, Ericsson select Open Multimedia Application Platform
(OMAP™)
•
“Star Wars: Phantom Menace” premiers in DLP Cinema™
•
Hitachi & TI joint agreement announced to develop HDTV
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Disney’s “Tarzan” is first movie without film-to-digital
transfer
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2000
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DMOS5 wafer factory converted to 200mm wafers
•
TMS320C64x™ core breaks records as world’s fastest
DSP
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TMS320C55x™ DSP core announced
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ADSL set-top box demonstrated at NAB 2000 by Philips and TI
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Shipments of DLP™ subsystems up over 250% from 1999
2001
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Palm Computer uses TI Portable Power Management devices
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First 300mm full flow silicon manufacturing begins
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Sun-UltraSPARC III - Copper process launched
2002
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90-nanometer CMOS process announced
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First single-chip Bluetooth® device made with TI digital
RF architecture
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130-nanometer technology qualified for production on 300mm
wafers
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BiCOMIII introduced, first SiGe process with NPN and PNP transistors
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First 64-megabit ferroelectric RAM (FRAM) test chip produced
2003
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High-performance 14-bit, 124-MSPS analog-to-digital converter
announced
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First 90-nanometer samples delivered - phone call on 90nm
silicon
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First single-chip ADSL integrating 12-volt line driver announced
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Cisco Supplier of the Year award honors TI ASIC business
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15th anniversary of TI-Sun Microsystems relationship celebrated
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Single electron transistor research presented
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First CDMA chipset announced
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WANDA announced, a PDA design integrating three wireless technologies
2004
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First single-chip cell phone device shipped
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Strained silicon process announced, increases electron and
hole mobility
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65-nanometer CMOS process announced
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1GHz DSP announced, the first and fastest in the industry
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OMAP™ 2 architecture announced
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Capability for TV broadcast on cell phones announced
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DLP™ TVs outsell plasma in North America for large-screen
TVs
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90-nanometer technology qualified for production on 300mm
wafers
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