DATA SHEET
UCC23511-Q1 1.5A 拉电流、2A 灌电流、5.7kVRMS 光兼容单通道隔离式栅极驱动器
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1 特性
- 符合面向汽车应用的 AEC-Q100 标准
- 具有光兼容输入的 5.7kVRMS 单通道隔离式栅极驱动器
- 适用于光隔离式栅极驱动器的引脚对引脚普适版升级
- 1.5A 拉电流/2A 灌电流，峰值输出电流
- 最高 33V 输出驱动器电源电压
- 12V VCC UVLO
- 轨到轨输出
- 105ns（最大值）传播延迟
- 25ns（最大值）器件对器件延迟匹配
- 35ns（最大值）脉宽失真度
- 150kV/μs（最小值）共模瞬态抗扰度 (CMTI)
- 隔离栅寿命大于 50 年
- 输入级具有 13V 反极性电压处理能力，支持互锁
- 扩展型 SO-6 封装，爬电距离和间隙大于 8.5mm
- 运行结温 TJ：–40°C 至 +150°C
- 提供功能安全
- 安全相关认证：
- 符合 UL 1577 标准且长达 1 分钟的 5.7kVRMS 隔离
- 符合 DIN V VDE V0884-11:2017-01 标准的 8000VPK 增强型隔离（进展中）
2 应用
- 适用于电动汽车的牵引逆变器
- 车载充电器和直流充电站
- HVAC
- 加热器
- 工业电机控制驱动
3 说明
UCC23511-Q1 是一款适用于 IGBT、MOSFET 和 SiC MOSFET 的光兼容单通道隔离式栅极驱动器，具有 1.5A 峰值拉电流和 2A 峰值灌电流以及 5.7kVRMS 增强型隔离额定值。33V 的高电源电压范围允许使用双极电源来有效驱动 IGBT 和 SiC 功率 FET。UCC23511-Q1 可以驱动低侧和高侧功率 FET。与基于光耦合器的标准栅极驱动器相比，此器件的主要特性和特征可显著提高性能和可靠性，同时在原理图和布局设计中保持引脚对引脚兼容性。性能亮点包括高共模瞬态抗扰度 (CMTI)、低传播延迟和小脉宽失真。严格的过程控制可实现较小的器件对器件偏移。输入级是仿真二极管 (ediode)，这意味着与光耦合器栅极驱动器中传统的 LED 相比，可靠性和老化特性更为出色。该器件采用扩展型 SO6 封装，爬电距离和间隙大于 8.5mm，塑封材料（材料组 I）的相对漏电起痕指数 (CTI) 大于 600V。UCC23511-Q1 具有高性能和高可靠性，因此非常适合用于汽车电机驱动器，例如牵引逆变器、车载充电器、直流充电站以及汽车暖通空调和加热系统。更高的工作温度为传统光耦合器以前无法支持的应用开辟了机会。
器件信息(1)
| 器件型号 | 封装 | 封装尺寸（标称值） |
|---|---|---|
| UCC23511-Q1 | 扩展型 SO-6 | 7.5mm x 4.68mm |
(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附录。
UCC23511-Q1 (SO6) 的功能方框图4 Revision History
Changes from Revision * (August 2020) to Revision A (March 2021)
- 将销售状态从“预告信息”更改为“量产数据”Go
5 Pin Configuration and Function
Figure 5-1 UCC23511-Q1 PackageSO-6Top
ViewPin Functions
| PIN | TYPE(1) | DESCRIPTION | |
|---|---|---|---|
| NAME | NO. | ||
| UCC23511-Q1 | |||
| ANODE | 1 | I | Anode |
| CATHODE | 3 | I | Cathode |
| NC | 2 | - | No Connection |
| VCC | 6 | P | Positive output supply rail |
| VEE | 4 | P | Negative output supply rail |
| VOUT | 5 | O | Gate-drive output |
(1) P = Power, G = Ground, I = Input, O = Output
6 Specifications
6.1 Absolute Maximum Ratings
Over operating free air temperature range (unless otherwise noted)(1)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Average Input Current | IF(AVG) | - | 25 | mA |
| Peak Transient Input Current | IF(TRAN) <1us pulse, 300pps | 1 | A | |
| Reverse Input Voltage | VR(MAX) | 14 | V | |
| Output supply voltage | VCC – VEE | -0.3 | 35 | V |
| Output signal voltage | VOUT – VCC | 0.3 | V | |
| Output signal voltage | VOUT – VEE | -0.3 | V | |
| Junction temperature | TJ(2) | -40 | 150 | °C |
| Storage temperature | Tstg | -65 | 150 | °C |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) To maintain the recommended operating conditions for TJ, see the Section 6.4 section.
6.2 ESD Ratings
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±4000 | V |
| Charged-device model (CDM), per AEC Q100-011 | ±1500 | |||
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.3 Recommended Operating Conditions
Over operating free-air temperature range (unless otherwise noted)
| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| VCC | Output Supply Voltage(VCC – VEE) | 14 | 33 | V | |
| IF (ON) | Input Diode Forward Current (Diode "ON") | 7 | 16 | mA | |
| VF (OFF) | Anode voltage - Cathode voltage (Diode "OFF") | -13 | 0.9 | V | |
| TJ | Junction temperature | -40 | 150 | °C | |
| TA | Ambient temperature | -40 | 125 | °C | |
6.4 Thermal Information
| THERMAL METRIC(1) | UCC23511-Q1 | UNIT | |
|---|---|---|---|
| SO6 | |||
| 6 Pins | |||
| RθJA | Junction-to-ambient thermal resistance | 126 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 66.1 | °C/W |
| RθJB | Junction-to-board thermal resistance | 62.8 | °C/W |
| ΨJT | Junction-to-top characterization parameter | 29.6 | °C/W |
| ΨJB | Junction-to-board characterization parameter | 60.8 | °C/W |
(1) For more information about traditional and new thermal metrics, see the http://www.ti.com/lit/SPRA953 application report.
6.5 Power Ratings
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| PD | Maximum power dissipation on input and output(1) | VCC = 20 V, IF= 10mA 10-kHz, 50% duty cycle, square wave,180-nF load, TA=25oC | 750 | mW | ||
| PD1 | Maximum input power dissipation(2) | 10 | mW | |||
| PD2 | Maximum output power dissipation | 740 | mW | |||
(1) Derate at 6 mW/°C above 25oC ambient
temperature
(2) Recommended maximum PD1 = 40mW. Absolute maximum PD1 = 55mW
6.6 Insulation Specifications
| PARAMETER | TEST CONDITIONS | SPECIFICATION | UNIT | |
|---|---|---|---|---|
| CLR | External clearance(1) | Shortest terminal-to-terminal distance through air | >8.5 | mm |
| CPG | External Creepage(1) | Shortest terminal-to-terminal distance across the package surface | >8.5 | mm |
| DTI | Distance through the insulation | Minimum internal gap (internal clearance) | >17 | µm |
| CTI | Comparative tracking index | DIN EN 60112 (VDE 0303-11); IEC 60112 | >600 | V |
| Material Group | According to IEC 60664-1 | I | ||
| Overvoltage category per IEC 60664-1 | Rated mains voltage ≤ 600 VRMS | I-IV | ||
| Rated mains voltage ≤ 1000 VRMS | I-III | |||
| DIN V VDE 0884-11 (VDE V 0884-11)(2) | ||||
| VIORM | Maximum repetitive peak isolation voltage | AC voltage (bipolar) | 2121 | VPK |
| VIOWM | Maximum isolation working voltage | AC voltage (sine wave); time-dependent dielectric breakdown (TDDB) test; see Figure 1 | 1500 | VRMS |
| DC voltage | 2121 | VDC | ||
| VIOTM | Maximum transient isolation voltage | VTEST = VIOTM, t = 60 sec (qualification) VTEST = 1.2 × VIOTM, t = 1 s (100% production) | 8000 | VPK |
| VIOSM | Maximum surge isolation voltage(3) | Test method per IEC 62368, 1.2/50 ms waveform, VTEST = 1.6 x VIOSM = 12800 VPK (qualification) | 8000 | VPK |
| qpd | Apparent charge(4) | Method a: After I/O safety test subgroup 2/3,Vini = VIOTM, tini = 60 s; Vpd(m) = 1.2 x VIORM = 1800 VPK, tm = 10 s | ≤5 | pC |
| Method a: After environmental tests subgroup 1, Vini = VIOTM, tini = 60 s; Vpd(m) = 1.6 x VIORM = 2400 VPK, tm = 10 s | ≤5 | |||
| Method b1: At routine test (100% production) and preconditioning (type test), Vini = VIOTM, tini = 1 s; Vpd(m) = 1.875 x VIORM = 2813 VPK, tm = 1 s | ≤5 | |||
| CIO | Barrier capacitance, input to output(5) | VIO = 0.4 x sin (2πft), f = 1 MHz | 0.5 | pF |
| RIO | Insulation resistance, input to output(5) | VIO = 500 V, TA = 25°C | >1012 | Ω |
| VIO = 500 V, 100°C ≤ TA ≤ 125°C | >1011 | |||
| VIO = 500 V at TS = 150°C | >109 | |||
| Pollution degree | 2 | |||
| Climatic category | 40/125/21 | |||
| UL 1577 | ||||
| VISO | Withstand isolation voltage | VTEST = VISO = 5700 VRMS, t = 60 s (qualification), VTEST = 1.2 x VISO = 6840 VRMS, t = 1 s (100% production) | 5700 | VRMS |
(1) Creepage and clearance requirements should be applied according to the specific equipment isolation standards of an application. Care should be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on the printed-circuit board do not reduce this distance. Creepage and clearance on a printed-circuit board become equal in certain cases. Techniques such as inserting grooves, ribs, or both on a printed-circuit board are used to help increase these specifications.
(2) This coupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
(3) Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.
(4) Apparent charge is electrical discharge caused by a partial discharge (pd).
(5) All pins on each side of the barrier tied together creating a two-pin device.
6.7 Safety-Related Certifications
| VDE | UL |
|---|---|
| Plan to certify according to DIN V VDE V 0884-11: 2017-01 | Plan to certify according to UL 1577 Component Recognition Program |
| Reinforced insulation Maximum transient isolation voltage, 8000
VPK; Maximum repetitive peak isolation voltage, 2121 VPK; Maximum surge isolation voltage, 8000 VPK |
Single protection, 5700 VRMS |
| Certificate in progress | File number: E181974 |
6.8 Safety Limiting Values
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| IS | Safety input, output, or supply current | RqJA = 126°C/W, VI = 15 V, TJ = 150°C, TA = 25°C | 50 | mA | ||
| RqJA = 126°C/W, VI = 30 V, TJ = 150°C, TA = 25°C | 25 | |||||
| PS | Safety input, output, or total power | RqJA = 126°C/W, TJ = 150°C, TA = 25°C | 750 | mW | ||
| TS | Maximum safety temperature(1) | 150 | °C | |||
(1) The maximum safety temperature, TS, has the same value as the maximum junction temperature, TJ , specified for the device. The IS and PS parameters represent the safety current and safety power respectively. The maximum limits of IS and PS should not be exceeded. These limits vary with the ambient temperature, TA. The junction-to-air thermal resistance, RqJA, in the Thermal Information table is that of a device installed on a high-K test board for leaded surface-mount packages. Use these equations to calculate the value for each parameter: TJ = TA + RqJA ´ P, where P is the power dissipated in the device. TJ(max) = TS = TA + RqJA ´ PS, where TJ(max) is the maximum allowed junction temperature. PS = IS ´ VI , where VI is the maximum supply voltage.
6.9 Electrical Characteristics
Unless otherwise noted, all typical values are at TA = 25°C, VCC–VEE= 15V, VEE= GND. All min and max specifications are at recommended operating conditions (TJ = -40C to 150°C, IF(on)= 7 mA to 16 mA, VEE= GND, VCC= 15 V to 30 V, VF(off)= –5V to 0.8V)
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| INPUT | ||||||
| IFLH | Input Forward Threshold Current Low to High | VOUT > 5 V, Cg = 1 nF | 1.5 | 2.8 | 4 | mA |
| VF | Input Forward Voltage | IF =10 mA | 1.8 | 2.1 | 2.4 | V |
| VF_HL | Threshold Input Voltage High to Low | V < 5 V, Cg = 1 nF | 0.9 | V | ||
| ΔVF/ΔT | Temp Coefficient of Input Forward Voltage | IF =10 mA | 1 | 1.35 | mV/°C | |
| VR | Input Reverse Breakdown Voltage | IR= 10 uA | 15 | V | ||
| CIN | Input Capacitance | F = 0.5 MHz | 15 | pF | ||
| OUTPUT | ||||||
| IOH | High Level Peak Output Current | IF = 10 mA, VCC =15V, CLOAD=0.18uF, RG_total=6Ω(1) , CVDD=10uF, Pulse width <10us | 1 | 1.5 | A | |
| IOL | Low Level Peak Output Current | VF= 0 V, VCC =15V, CLOAD=0.18uF, RG_total=6Ω(1), CVDD=10uF, Pulse width <10us | 1 | 2.0 | A | |
| VOH | High Level Output Voltage | IF = 10 mA, IO= -20mA (with respect to VCC) | 0.07 | 0.18 | 0.36 | V |
| IF = 10 mA, IO= 0 mA | VCC | V | ||||
| VOL | Low Level Output Voltage | VF = 0 V, IO= 20 mA | 25 | mV | ||
| ICC_H | Output Supply Current (Diode On) | IF = 10 mA, IO= 0 mA | 2.2 | mA | ||
| ICC_L | Output Supply Current (Diode Off) | VF = 0 V, IO= 0 mA | 2 | mA | ||
| UNDER VOLTAGE LOCKOUT | ||||||
| UVLOR | Under Voltage Lockout VCC rising | VCC_Rising, IF=10 mA | 11 | 12.5 | 13.5 | V |
| UVLOF | Under Voltage Lockout VCC falling | VCC_Falling, IF=10 mA | 10 | 11.5 | 12.5 | V |
| UVLOHYS | UVLO Hysteresis | 1.0 | V | |||
(1) RG_total is the total gate resistance. It includes the external gate resistor on the PCB + the internal gate resistance of the power switch. Min RG_total of 4Ω is recommended (for VCC-VEE =15V). For more details, refer to section 9 (Application and Implementation) of this datasheet.
6.10 Switching Characteristics
Unless otherwise noted, all typical values are at TA = 25°C, VCC-VEE= 30 V, VEE= GND. All min and max specifications are at recommended operating conditions (TJ = -40 to 150°C, IF(ON)= 7 mA to 16 mA, VEE= GND, VCC= 15 V to 30 V, VF(OFF)= –5V to 0.8V)
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| tr | Output-signal Rise Time | Cg = 1nF FSW = 20 kHz, (50% Duty Cycle) VCC=15V | 28 | ns | ||
| tf | Output-signal Fall Time | 25 | ns | |||
| tPLH | Propagation Delay, Low to High | 70 | 105 | ns | ||
| tPHL | Propagation Delay, High to Low | 70 | 105 | ns | ||
| tPWD | Pulse Width Distortion |tPHL – tPLH| | 35 | ns | |||
| tsk(pp) | Part-to-Part Skew in Propagation Delay Between any Two Parts(1) | Cg = 1nF FSW = 20 kHz, (50% Duty Cycle) VCC=15V, IF=10mA | 25 | ns | ||
| tUVLO_rec | UVLO Recovery Delay | VCC Rising from 0V to 15V | 20 | 30 | µs | |
| CMTIH | Common-mode Transient Immunity (Output High) | IF = 10 mA, VCM = 1500 V, VCC= 30 V, TA= 25°C | 150 | kV/µs | ||
| CMTIL | Common-mode Transient Immunity (Output Low) | VF = 0 V, VCM = 1500 V, VCC= 30 V, TA= 25°C | 150 | kV/µs | ||
(1) tsk(pp) is the magnitude of the difference in propagation delay times between the output of different devices switching in the same direction while operating at identical supply voltages, temperature, input signals and loads ensured by characterization.
