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  • LM74700-Q1 低 IQ 电池反向保护理想二极管控制器

    • ZHCSHV4G October   2017  – December 2020 LM74700-Q1

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  • LM74700-Q1 低 IQ 电池反向保护理想二极管控制器
  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
  7. 7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Input Voltage
      2. 9.3.2 Charge Pump
      3. 9.3.3 Gate Driver
      4. 9.3.4 Enable
    4. 9.4 Device Functional Modes
      1. 9.4.1 Shutdown Mode
      2. 9.4.2 Conduction Mode
        1. 9.4.2.1 Regulated Conduction Mode
        2. 9.4.2.2 Full Conduction Mode
        3. 9.4.2.3 Reverse Current Protection Mode
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Typical Application
        1. 10.1.1.1 Design Requirements
        2. 10.1.1.2 Detailed Design Procedure
          1. 10.1.1.2.1 Design Considerations
          2. 10.1.1.2.2 MOSFET Selection
          3. 10.1.1.2.3 Charge Pump VCAP, input and output capacitance
        3. 10.1.1.3 Selection of TVS Diodes for 12-V Battery Protection Applications
        4. 10.1.1.4 Selection of TVS Diodes and MOSFET for 24-V Battery Protection Applications
        5. 10.1.1.5 Application Curves
    2. 10.2 OR-ing Application Configuration
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 接收文档更新通知
    2. 13.2 支持资源
    3. 13.3 Trademarks
    4. 13.4 静电放电警告
    5. 13.5 术语表
  14. 14Mechanical, Packaging, and Orderable Information
  15. 重要声明
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DATA SHEET

LM74700-Q1 低 IQ 电池反向保护理想二极管控制器

本资源的原文使用英文撰写。 为方便起见，TI 提供了译文；由于翻译过程中可能使用了自动化工具，TI 不保证译文的准确性。 为确认准确性，请务必访问 ti.com 参考最新的英文版本（控制文档）。

1 特性

  • 具有符合 AEC-Q100 标准的下列特性
    • 器件温度等级 1：
      –40°C 至 +125°C 环境工作温度范围
    • 器件 HBM ESD 分类等级 2
    • 器件 CDM ESD 分类等级 C4B
  • 提供功能安全
    • 可帮助进行功能安全系统设计的文档
  • 3.2V 至 65V 输入范围（3.9V 启动）
  • -65V 反向电压额定值
  • 适用于外部 N 沟道 MOSFET 的电荷泵
  • 20mV 阳极至阴极正向压降调节
  • 使能引脚特性
  • 1µA 关断电流（EN = 低电平）
  • 80µA 工作静态电流（EN = 高电平）
  • 2.3A 峰值栅极关断电流
  • 快速响应反向电流阻断：
    小于 0.75µs
  • 采用合适的 TVS 二极管，符合汽车 ISO7637 瞬态要求
  • 采用 6 引脚和 8 引脚 SOT-23 封装 2.90mm × 1.60mm

2 应用

  • 汽车 ADAS 系统 - 摄像头
  • 汽车信息娱乐系统 - 数字仪表盘、主机
  • 工业工厂自动化 - PLC
  • 企业电源
  • 用于冗余电源的有源 ORing

3 说明

LM74700-Q1 是一款符合汽车 AEC Q100 标准的理想二极管控制器，与外部 N 沟道 MOSFET 配合工作，可作为理想二极管整流器利用 20mV 正向压降实现低损耗反向保护。3.2V 至 65V 的宽电源输入范围可实现对众多常用直流总线电压（例如：12V、24V 和 48V 汽车电池系统）的控制。3.2V 输入电压支持适用于汽车系统中严苛的冷启动要求。该器件可耐受低至 –65V 的负电源电压，并提供负载保护。

该器件通过控制 MOSFET 的栅极将正向压降调节至 20mV。该电流调节方案可在反向电流事件中支持平稳关机，并确保零直流反向电流。该器件能够快速 (< 0.75µs) 响应反向电流阻断，因此适用于在 ISO7637 脉冲测试以及电源故障和输入微短路条件下要求保持输出电压的系统。

LM74700-Q1 控制器可提供适用于外部 N 沟道 MOSFET 的电荷泵栅极驱动器。LM74700-Q1 的高电压额定值有助于简化用于汽车 ISO7637 保护的系统设计。当使能引脚处于低电平时，控制器关闭，消耗大约 1µA 的电流。

器件信息(1)
器件型号 封装 封装尺寸（标称值）
LM74700-Q1 SOT-23 (6) 2.90mm × 1.60mm
LM74700-Q1 SOT-23 (8) 2.90mm × 1.60mm
(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附录。
GUID-B11A4FBC-25A3-411E-BA38-375830E4C81C-low.gif典型应用原理图
GUID-BBBE2269-EFD5-4209-B200-4168FAB76CC5-low.gif输入短路期间的反向电流阻断

4 Revision History

Changes from Revision F (December 2019) to Revision G (December 2020)

  • 更新了整个文档的表、图和交叉参考的编号格式Go
  • 向数据表添加了 DDF (SOT-23) 封装Go
  • Relaxed VCAP specs in Electrical Characteristics tableGo

Changes from Revision () to Revision ()

    Changes from Revision E (February 2019) to Revision F (December 2019)

    • 向 Section 1 部分添加了“提供功能安全”链接Go

    Changes from Revision D (January 2019) to Revision E (February 2019)

    • 将“预告信息”更改为“量产数据”Go

    Changes from Revision C (November 2018) to Revision D (January 2019)

    • Added Section 7 section Go
    • Added Section 8 section Go
    • Deleted Application Limitations section Go
    • Added Section 10.2 section Go

    Changes from Revision B (October 2018) to Revision C (November 2018)

    • Added footnotes to the Absolute Maximum Ratings and Recommended Operating Conditions tables in the Section 6 sectionGo

    Changes from Revision A (March 2018) to Revision B (October 2018)

    • 在 Section 6 和应用限制 部分进行了更改Go

    Changes from Revision * (October 2017) to Revision A (March 2018)

    • 在整个数据表中进行了多处更改Go

    5 Pin Configuration and Functions

    GUID-4CD96EA3-7034-46CD-9A6F-18CED3C31537-low.gifFigure 5-1 DBV Package6-Pin SOT-23Top View
    Table 5-1 Pin Functions
    PINI/O(1)DESCRIPTION
    NO.NAME
    1VCAPOCharge pump output. Connect to external charge pump capacitor
    2GNDGGround pin
    3ENIEnable pin. Can be connected to ANODE for always ON operation
    4CATHODEICathode of the diode. Connect to the drain of the external N-channel MOSFET
    5GATEOGate drive output. Connect to gate of the external N-channel MOSFET
    6ANODEIAnode of the diode and input power. Connect to the source of the external N-channel MOSFET
    (1) I = Input, O = Output, G = GND
    GUID-20201209-CA0I-ZWFS-GSZR-SL0BGP72L1DG-low.gifFigure 5-2 DDF Package8-Pin SOT-23Top View
    Table 5-2 Pin Functions
    PINI/O(1)DESCRIPTION
    NO.NAME
    1ENIEnable pin. Can be connected to ANODE for always ON operation
    2GNDGGround pin
    3N.CNo connection
    4VCAPOCharge pump output. Connect to external charge pump capacitor
    5ANODEIAnode of the diode and input power. Connect to the source of the external N-channel MOSFET
    6GATEOGate drive output. Connect to gate of the external N-channel MOSFET
    7N.CNo connection
    8CATHODEICathode of the diode. Connect to the drain of the external N-channel MOSFET
    (1) I = Input, O = Output, G = GND

    6 Specifications

    6.1 Absolute Maximum Ratings

    over operating free-air temperature range (unless otherwise noted)(1)
    MINMAXUNIT
    Input PinsANODE to GND–6565V
    EN to GND, V(ANODE) > 0 V–0.365V
    EN to GND, V(ANODE) ≤ 0 VV(ANODE)(65 + V(ANODE))V
    Output PinsGATE to ANODE–0.315V
    VCAP to ANODE–0.315V
    Output to Input PinsCATHODE to ANODE–575V
    Operating junction temperature(2)–40150°C
    Storage temperature, Tstg–40150°C
    (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
    (2) High junction temperatures degrade operating lifetimes. Operating lifetime is de-rated for junction temperatures greater than 125°C.

    6.2 ESD Ratings

    VALUEUNIT
    V(ESD)Electrostatic dischargeHuman body model (HBM), per AEC Q100-002(1)±2000V
    Charged device model (CDM), per AEC Q100-011Corner pins (VCAP, EN, ANODE, CATHODE)±750
    Other pins±500
    (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

    6.3 Recommended Operating Conditions

    over operating free-air temperature range (unless otherwise noted)(1)
    MINNOMMAXUNIT
    Input PinsANODE to GND–6060V
    CATHODE to GND60
    EN to GND–6060
    Input to Output pinsANODE to CATHODE–70V
    External capacitanceANODE22nF
    CATHODE, VCAP to ANODE0.1µF
    External MOSFET max VGS ratingGATE to ANODE15V
    TJOperating junction temperature range(2)–40150°C
    (1) Recommended Operating Conditions are conditions under which the device is intended to be functional. For specifications and test
    conditions, see Electrical Characteristics.
    (2) High junction temperatures degrade operating lifetimes. Operating lifetime is de-rated for junction temperatures greater than 125°C.

    6.4 Thermal Information

    THERMAL METRIC(1)LM74700-Q1LM74700-Q1UNIT
    DBV (SOT)DDF (SOT)
    6 PINS8 PINS
    RθJAJunction-to-ambient thermal resistance189.8133.8°C/W
    RθJC(top)Junction-to-case (top) thermal resistance103.872.6°C/W
    RθJBJunction-to-board thermal resistance45.854.5°C/W
    ΨJTJunction-to-top characterization parameter19.44.6°C/W
    ΨJBJunction-to-board characterization parameter45.554.2°C/W
    (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

    6.5 Electrical Characteristics

    TJ = –40°C to +125°C; typical values at TJ = 25°C, V(ANODE) = 12 V, C(VCAP) = 0.1 µF, V(EN) = 3.3 V, over operating free-air temperature range (unless otherwise noted)
    PARAMETERTEST CONDITIONSMINTYPMAXUNIT
    VANODE SUPPLY VOLTAGE
    V(ANODE)Operating input voltage460V
    V(ANODE POR)VANODE POR Rising threshold3.9V
    VANODE POR Falling threshold2.22.83.1V
    V(ANODE POR(Hys))VANODE POR Hysteresis0.440.67V
    I(SHDN)Shutdown Supply CurrentV(EN) = 0 V0.91.5µA
    I(Q)Operating Quiescent Current80130µA
    ENABLE INPUT
    V(EN_IL)Enable input low threshold0.50.91.22V
    V(EN_IH)Enable input high threshold1.0622.6
    V(EN_Hys)Enable Hysteresis0.521.35V
    I(EN)Enable sink currentV(EN) = 12 V35µA
    VANODE to VCATHODE
    V(AK REG)Regulated Forward V(AK) Threshold132029mV
    V(AK)V(AK) threshold for full conduction mode345057mV
    V(AK REV)V(AK) threshold for reverse current blocking–17–11–2mV
    GmRegulation Error AMP Transconductance(1)120018003100µA/V
    GATE DRIVE
    I(GATE)Peak source currentV(ANODE) – V(CATHODE) = 100 mV, 
    V(GATE) – V(ANODE) = 5 V    		311mA
    Peak sink currentV(ANODE) – V(CATHODE) = –20 mV, 
    V(GATE) – V(ANODE) = 5 V    		2370mA
    Regulation max sink currentV(ANODE) – V(CATHODE) = 0 V, 
    V(GATE) – V(ANODE) = 5 V    		626µA
    RDSONdischarge switch RDSONV(ANODE) – V(CATHODE) = –20 mV, 
    V(GATE) – V(ANODE) = 100 mV    		0.42Ω
    CHARGE PUMP
    I(VCAP)Charge Pump source current (Charge pump on)V(VCAP) – V(ANODE) = 7 V162300600µA
    Charge Pump sink current (Charge pump off)V(VCAP) – V(ANODE) = 14 V510µA
    V(VCAP) – V(ANODE)Charge pump voltage at V(ANODE) = 3.2 VI(VCAP) ≤ 30 µA8V
    Charge pump turn on voltage10.812.112.9V
    Charge pump turn off voltage

    11.6

    		1313.9V
    Charge Pump Enable comparator Hysteresis0.540.91.36V
    V(VCAP UVLO)V(VCAP) – V(ANODE) UV release at rising edgeV(ANODE) – V(CATHODE) = 100 mV5.86.67.7V
    V(VCAP) – V(ANODE) UV threshold at falling edgeV(ANODE) – V(CATHODE) = 100 mV5.115.686V
    CATHODE
    I(CATHODE)CATHODE sink currentV(ANODE) = 12 V, V(ANODE) – V(CATHODE) = –100 mV1.72µA
    V(ANODE) – V(CATHODE) = –100 mV1.22.2µA
    V(ANODE) = –12 V, V(CATHODE) = 12 V1.252.06µA
    (1) Parameter guaranteed by design and characterization

    6.6 Switching Characteristics

    TJ = –40°C to +125°C; typical values at TJ = 25°C, V(ANODE) = 12 V, C(VCAP) = 0.1 µF, V(EN) = 3.3 V, over operating free-air temperature range (unless otherwise noted)
    PARAMETERTEST CONDITIONSMINTYPMAXUNIT
    ENTDLYEnable (low to high) to Gate Turn On delayV(VCAP) > V(VCAP UVLOR)75110µs
    tReverse delayReverse voltage detection to Gate Turn Off delayV(ANODE) – V(CATHODE) = 100 mV to –100 mV0.450.75µs
    tForward recoveryForward voltage detection to Gate Turn On delayV(ANODE) – V(CATHODE) = –100 mV to 700 mV1.42.6µs

    7 Typical Characteristics

    GUID-30867A05-2207-42A6-9672-9E9E92C1BD0E-low.gifFigure 7-1 Shutdown Supply Current vs Supply Voltage
    GUID-16A4309F-FB74-4E7E-97AF-7910F2865299-low.gifFigure 7-3 Enable Sink Current vs Supply Voltage
    GUID-B44EF270-7B37-4123-B9B9-2501BD35C8B4-low.gifFigure 7-5 Charge Pump Current vs Supply Voltage at VCAP = 6 V
    GUID-9F191F29-B01D-481A-A289-38A80F6BFDCF-low.gifFigure 7-7 Charge Pump V-I Characteristics at VANODE = 3.2 V
    GUID-D0EE6B02-52F1-4889-B5D8-E2BBF48252FF-low.gifFigure 7-9 Reverse Current Blocking Delay vs Temperature
    GUID-B68B917A-EED6-498B-9AD9-2D1EE6F5B252-low.gifFigure 7-11 Enable to Gate Delay vs Temperature
    GUID-4E4B762B-001C-4014-A61A-93E2704440A2-low.gifFigure 7-13 Charge Pump UVLO Threshold vs Temperature
    GUID-EFCBB18D-8398-49C1-AFF6-6DAB13C3D167-low.gifFigure 7-15 Gate Current vs Forward Voltage Drop
    GUID-1B821B65-1B73-404F-9671-70FF76F2F7BE-low.gifFigure 7-2 Operating Quiescent Current vs Supply Voltage
    GUID-667BA90A-BA53-405A-95B1-D477DBABFB3B-low.gifFigure 7-4 CATHODE Sink Current vs Supply Voltage
    GUID-FB83EC6D-9E91-452C-B1D8-710778D1A54D-low.gifFigure 7-6 Charge Pump V-I Characteristics at VANODE > = 12 V
    GUID-0F0D4A5B-5DF0-41A7-A516-D44C040AD602-low.gifFigure 7-8 Enable Falling Threshold vs Temperature
    GUID-C01F85FC-2E11-44DB-AB18-31BA8A1AD4C1-low.gifFigure 7-10 Forward Recovery Delay vs Temperature
    GUID-A60F0511-0D77-4131-8E6A-690831B6901F-low.gifFigure 7-12 Charge Pump ON/OFF Threshold vs Temperature
    GUID-21907555-13EB-4878-8F9B-A26CD9789423-low.gifFigure 7-14 VANODE POR Threshold vs Temperature

    8 Parameter Measurement Information

    GUID-6F986529-036C-4437-AF6B-4C6BECE5D743-low.gifFigure 8-1 Timing Waveforms

     
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