Data Sheet
UCC2742x-Q1 具有使能端的双路 4A 高速低侧 MOSFET 驱动器
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1 特性
- 符合汽车应用要求
- 具有符合 AEC-Q100 标准的下列特性：
- 器件温度等级 1：–40°C 至 +125℃ 环境工作温度范围
- 器件 HBM ESD 分类等级 2
- 器件 CDM ESD 分类等级 C6
- 业界通用引脚排列
- 每个驱动器的使能功能
- 高电流驱动能力：±4A
- 独特的双极和 CMOS 真正驱动输出级在 MOSFET 米勒阈值提供高电流
- 与 TTL 和 CMOS 兼容的与电源电压无关的输入
- 1.8nF 负载时的上升时间和下降时间典型值分别为 20ns 和 15ns
- 输入下降和上升时的典型传播延迟时间分别为 25ns 和 35ns
- 4V 至 15V 电源电压
- 可以并联双输出以获得更高的驱动电流
- 采用热增强型 MSOP PowerPAD™ 封装
- 额定温度为 -40°C 至 +125°C
2 应用
- 开关模式电源
- 直流/直流转换器
- 电机控制器
- 线路驱动器
- D 类开关放大器
3 说明
UCC2742x-Q1 系列器件是高速双路 MOSFET 驱动器，可向容性负载提供较大的峰值电流。提供两种标准逻辑选项：双反相驱动器和双同相驱动器。它们采用标准 8 引脚 SOIC (D) 封装。热增强型 8 引脚 PowerPAD 封装 MSOP 封装 (DGN) 大大降低了热阻以改善长期可靠性。
通过使用本身能够更大限度减少击穿电流的设计，这些驱动器可在 MOSFET 开关切换期间，在米勒平坦区域提供最需要的 4A 电流。独特的双极和 MOSFET 混合输出级并联，可在低电源电压下实现高效的拉电流和灌电流。
UCC2742x-Q1 提供使能 (ENBL) 功能，以更好地控制驱动器应用的运行。在引脚 1 和 8 上实现了 ENBA 和 ENBB，之前这些引脚在业界通用引脚排列中未使用。它们内部上拉至 VDD 电源以实现高电平有效逻辑运行，并且可保持断开连接状态以实现标准运行。
器件信息
| 器件型号(1) | 封装 | 封装尺寸（标称值） |
|---|---|---|
| UCC2742x-Q1 | SOIC (8) | 4.90mm × 3.91mm |
| MSOP 具有 PowerPAD (8) | 3.00mm × 3.00mm |
(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附录。
方框图4 Device Comparison Table
| ORDERABLE PART NUMBER(1) | CONFIGURATION |
|---|---|
| UCC27423QDGNRQ1 | Dual Inverting |
| UCC27424QDGNRQ1 | Dual Noninverting |
| UCC27423QDRQ1 | Dual Inverting |
| UCC27424QDRQ1 | Dual Noninverting |
| UCC27425QDRQ1 | One Inverting, One Noninverting |
(1) For the most current package and ordering information, see
Section 13, or see the TI web site at www.ti.com.
5 Pin Configuration and Functions
Figure 5-1 UCC27423-Q1: D or DGN Package8-Pin SOIC
or MSOP With PowerPADDual Inverting, Top
View
Figure 5-2 UCC27424-Q1: D or DGN Package8-Pin SOIC
or MSOP With PowerPADDual Noninverting,
Top View
Figure 5-3 UCC27425-Q1: D Package8-Pin
SOICOne Inverting, One Noninverting, Top
ViewTable 5-1 Pin Functions
| PIN | I/O | DESCRIPTION | |
|---|---|---|---|
| NO. | NAME | ||
| 1 | ENBA | I | Enable input for the driver A with logic-compatible threshold and hysteresis. The driver output can be enabled and disabled with this pin. It is internally pulled up to VDD with 100-kΩ resistor for active high operation. The output state when the device is disabled is low, regardless of the input state. |
| 2 | INA | I | Input A. Input signal of the A driver which has logic-compatible threshold and hysteresis. If not used, this input must be tied to either VDD or GND. It must not be left floating. |
| 3 | GND | — | Common ground. This ground must be connected very closely to the source of the power MOSFET which the driver is driving. |
| 4 | INB | I | Input B. Input signal of the B driver which has logic-compatible threshold and hysteresis. If not used, this input must be tied to either VDD or GND. It must not be left floating. |
| 5 | OUTB | O | Driver output B. The output stage is capable of providing 4-A drive current to the gate of a power MOSFET. |
| 6 | VDD | — | Supply voltage and the power input connection for this device. |
| 7 | OUTA | O | Driver output A. The output stage is capable of providing 4-A drive current to the gate of a power MOSFET. |
| 8 | ENBB | I | Enable input for the driver B with logic-compatible threshold and hysteresis. The driver output can be enabled and disabled with this pin. It is internally pulled up to VDD with 100-kΩ resistor for active-high operation. The output state when the device is disabled is low, regardless of the input state. |
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)(2)
| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| VDD | Supply voltage | –0.3 | 16 | V | |
| IOUT | Output current | DC | 0.3 | A | |
| Pulsed, 0.5 µs | 4.5 | ||||
| VIN | Input voltage | INA, INB | –5 | 6(3) or (VDD + 0.3)(3) | V |
| VEN | Enable voltage | ENBA, ENBB | –0.3 | 6(3) or (VDD + 0.3)(3) | V |
| PD | Power dissipation | TA = 25°C (D package) | 650 | mW | |
| TA = 25°C (DGN package) | 3 | W | |||
| TJ | Junction operating temperature | –55 | 150 | °C | |
| Tstg | Storage temperature | –65 | 150 | °C | |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to GND. Currents are positive into, negative out of, the specified terminal.
(3) Whichever is larger.
6.2 ESD Ratings
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±2000 | V |
| Charged-device model (CDM), per AEC Q100-011 | ±1000 | |||
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
