Data Sheet
THVD24x9 采用小型封装、具有集成浪涌保护和高总线故障保护功能的 3V 至 5.5V RS-485 收发器
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1 特性
- 符合或超出 TIA/EIA-485A 标准要求
- 3V 至 5.5V 电源电压
- 采用 9mm2 封装、集成浪涌保护功能的业界超小型 RS-485 器件
- VIO 支持从 1.65V 到 VCC 的电源电平
- 总线 I/O 保护
- ±3kV/42Ω IEC 61000-4-5 1.2/50μs 浪涌 (SOIC)
- ±1.5kV/42Ω IEC 61000-4-5 1.2/50μs 浪涌 (VSON)
- ±8kV IEC 61000-4-2 接触放电
- ±4kV IEC 61000-4-4 电气快速瞬变
- ±15kV HBM ESD
- ±42V 直流总线故障
- 有两种速度等级
- THVD2419：250kbps
- THVD2429：20Mbps
- 工作环境
温度范围：-40°C 至 125°C - 扩展级运行
共模范围：±25V - 用于噪声抑制的较大接收器滞后
- 关断模式下的低功耗：< 5µA
- 适用于热插拔功能的无干扰上电和断电
- 开路、短路和空闲总线失效防护
- 1/8 单位负载（多达 256 个总线节点）
- 采用可实现快插兼容性的
业界通用 8 引脚 SOIC 封装 - 采用 3mm x 3mm 无引线 (VSON) 封装、集成浪涌保护功能的小型 RS-485 器件
3 说明
THVD24x9 器件是半双工 RS-485 收发器，集成了浪涌保护功能。浪涌保护是通过在标准 8 引脚 SOIC (D) 封装以及小型 10 引脚 VSON 封装中集成瞬态电压抑制器 (TVS) 二极管实现的。此功能提高了可靠性，可以更好地抵抗耦合到数据电缆的噪声瞬变，而无需外部保护元件。
采用标准引脚排列 SOIC 封装的 THVD24x9 器件由 3.3V 或 5V 单电源供电。此外，采用 10 引脚 VSON 封装的 THVD24x9 器件支持额外的 VIO 电源，可在低至 1.65V 的电源电平下运行 IO。此系列器件具有宽共模电压范围，因而适用于长线缆上的多点应用。
(1) 有关更多信息，请参阅节 12。
(2) 封装尺寸（长 × 宽）为标称值，并包括引脚（如适用）。
THVD24x9 方框图（SOIC 封装）
THVD24x9 方框图（VSON 封装）4 Device Comparison Table
| PART NUMBER | PACKAGE | VIO | SIGNALING RATE | NODES |
|---|---|---|---|---|
| THVD2419 | SOIC-8 | No | up to 250kbps | 256 |
| THVD2429 | up to 20Mbps | |||
| THVD2419 | VSON-10 | Yes | up to 250kbps | |
| THVD2429 | up to 20Mbps |
5 Pin Configuration and Functions
Figure 5-1 THVD2419, THVD2429, 8-Pin (SOIC)
(Top View)
(Top View)
Figure 5-2 THVD2419, THVD2429, 10-Pin (VSON)
(Top View)
(Top View)
| PIN | TYPE | DESCRIPTION | ||
|---|---|---|---|---|
| NAME | SOIC-8 | VSON-10 | ||
| VIO | - | 1 | P | 1.8V to 5V supply for R, D, and RE and DE |
| R | 1 | 2 | O | Receiver data output |
| RE | 2 | 4 | I | Receiver enable, active low (integrated pull-up) |
| DE | 3 | 3 | I | Driver enable, active high (integrated pull-down) |
| D | 4 | 5 | I | Driver data input (integrated pull-up) |
| GND | 5 | 6, 7 | - | Device ground |
| A | 6 | 8 | I/O | Bus I/O port, A (complementary to B) |
| B | 7 | 9 | I/O | Bus I/O port, B (complementary to A) |
| VCC | 8 | 10 | P | 3.3V to 5V supply for the device |
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Logic supply voltage | VIO | –0.5 | VCC + 0.2 | V |
| Bus supply voltage | VCC | –0.5 | 6.5 | V |
| Bus voltage | Range at any bus pin (A or B) as differential or common-mode with respect to GND | –42 | 42 | V |
| Input voltage | Range at any logic pin (D, DE, SLR or RE) for devices with VIO pin | –0.3 | VIO + 0.2 | V |
| Input voltage | Range at any logic pin (D, DE, SLR or RE) for devices with no VIO pin | –0.3 | VCC + 0.2 | V |
| Receiver output current | IO | –24 | 24 | mA |
| Storage temperature | Tstg | –65 | 170 | °C |
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
6.2 ESD Ratings
| VALUE | UNIT | ||||
|---|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | Bus terminals and GND | ±16,000 | V |
| All pins except bus terminals and GND | ±4,000 | V | |||
| Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1,500 | V | |||
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
