REF35 超低功耗高精度电压基准
- ZHCSPK8C December 2021 – September 2024 REF35
  
  PRODUCTION DATA

Full reading width

Data Sheet

REF35 超低功耗高精度电压基准

本资源的原文使用英文撰写。为方便起见，TI 提供了译文；由于翻译过程中可能使用了自动化工具，TI 不保证译文的准确性。为确认准确性，请务必访问 ti.com 参考最新的英文版本（控制文档）。

下载最新的英语版本

1 特性

超低静态电流：
- 650nA（典型值）
初始精度：±0.05%（最大值）
温度系数（最大值）：
- 12ppm/°C（−40°C 至 105°C，SOT23 封装）
- 10ppm/°C（−40°C 至 85°C，WCSP 封装）
输出 1/f 噪声（0.1Hz 至 10Hz）：3.3ppm_P-P
NR 引脚可降低噪声
EN 引脚可降低关断电流消耗
长期稳定性：1k 小时内为 40ppm
热迟滞：70ppm
工作温度范围：‌–55°C 至 +125°C
输出电流：+10mA，−5mA
输入电压：V_REF + V_DO 至 6V
输出电压选项：
- 1.024V、1.2V、1.25V、1.6V、1.8V、2.048V、
  2.5V、3.0V、3.3V、4.096V、5.0V
小型 6 引脚 SOT−23 封装
尺寸超小的 4 引脚 WCSP 封装

2 应用

3 说明

REF35 是毫微功耗、低漂移、高精度串联基准系列器件。REF35 系列具有 ±0.05% 的初始精度，典型功耗为 650nA。该器件的温度系数 (12ppm/°C) 和长期稳定性（1000 小时内为 40ppm）有助于提高系统稳定性和可靠性。凭借低功耗以及高精度规格，此器件适用于多种便携式应用和低电流应用。

REF35 可提供高达 10mA 电流，噪声为 3.3ppm_p-p，负载调整率为 20ppm/mA。借助这一功能集，REF35 可为精密传感器和 12 至 16 位数据转换器提供强大的低噪声高精度电源。

此系列的额定工作温度范围为 -40°C 至 105°C，并且在 -55°C 至 125°C 也可以正常运行。凭借宽温度范围，此系列适用于工业应用。

REF35 提供 1.024V 至 5.0V 的宽输出电压范围。该器件具有节省空间的 6 引脚 SOT-23 和 4 引脚 WCSP 封装选项。有关可用的电压和封装选项，请联系您当地的 TI 销售代表。

封装信息

器件型号	封装 ⁽¹⁾	本体尺寸（标称值）⁽²⁾
REF35xxx	SOT-23 (6)	2.90mm × 1.60mm
REF35xxx	WCSP (4)	1.05mm × 0.84mm

(1) 如需了解所有可用电压选项和封装，请参阅数据表末尾的可订购产品附录。

(2) 封装尺寸（长 × 宽）为标称值，并包括引脚（如适用）。

REF35 用例

4 Device Comparison

PRODUCT		V_REF
SOT-23 (6)	WCSP (4)	V_REF
REF35102QDBVR	REF35102YBHR	1.024V
REF35120QDBVR	REF35120YBHR	1.2V
REF35125QDBVR	REF35125YBHR	1.25V
REF35160QDBVR	REF35160YBHR	1.6V
REF35170QDBVR	-	1.7V
REF35180QDBVR	REF35180YBHR	1.8V
REF35205QDBVR	-	2.048V
REF35250QDBVR	REF35250YBHR	2.5V
REF35300QDBVR	REF35300YBHR	3.0V
REF35330QDBVR	-	3.3V
REF35360QDBVR	-	3.6V
REF35409QDBVR	REF35409YBHR	4.096V
REF35500QDBVR	-	5.0V

5 Pin Configuration and Functions

Figure 5-1 DBV Package
6-Pin SOT-23
Top View

Figure 5-2 YBH Package
4-Pin WCSP
Top View

Table 5-1 Pin Functions

PIN			TYPE	DESCRIPTION
NAME	SOT-23	WCSP	TYPE	DESCRIPTION
GND	1	B1	Ground	Device ground connection. For DBV package pin 1 and pin 2 are internally short.
GND	2	-	Ground	Device ground connection.
EN	3	B2	Input	Enable connection. Enables or disables the device.
VIN	4	A2	Power	Input supply voltage connection.
NR	5	-	Output	Noise reduction pin. Connect a capacitor to reduce noise. This pin can be left floating.
VREF	6	A1	Output	Reference voltage output.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) ⁽¹⁾

		MIN	MAX	UNIT
Input voltage	IN	–0.3	6.5	V
Enable voltage	EN	–0.3	IN + 0.3 ⁽²⁾	V
Output voltage	V_REF	–0.3	IN + 0.3 ⁽²⁾	V
Output short circuit current	I_SC		20	mA
Operating temperature range	T_A	–55	125	°C
Storage temperature range	T_stg	–65	170	°C

(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.

(2) IN + 0.3V or 6.5V, whichever is lower

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins ⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per ANSI/ESDA/JEDEC JS-002, all pins ⁽²⁾	±750	V

(1) JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	NOM	MAX	UNIT
IN	Input voltage ⁽¹⁾	V_OUT+ V_DO⁽²⁾		6	V
EN	Enable voltage	0		IN	V
I_L	Output current	–5		10	mA
T_A	Operating temperature	–40	25	125	°C

(1) For V_REF = 1.024V to 1.5V, minimum V_IN = 1.7V

(2) V_DO = Dropout voltage

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		REF35		UNIT
		YBH (WCSP)	DBV (SOT-23)
		4 PINS	6 PINS
R_θJA	Junction-to-ambient thermal resistance	178.9	164.4	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	1.1	102.5	°C/W
R_θJB	Junction-to-board thermal resistance	60.3	59.6	°C/W
Ψ_JT	Junction-to-top characterization parameter	0.5	44.0	°C/W
Ψ_JB	Junction-to-board characterization parameter	60.2	59.4	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	N/A	N/A	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

At V_IN = V_REF + 0.5V, V_EN = V_IN, C_L = 10µF, C_IN = 0.1µF, I_L = 0mA, minimum and maximum specifications at T_A = –40℃ to 125℃, typical specifications T_A = 25℃; unless otherwise noted

PARAMETER		TEST CONDITION		MIN	TYP	MAX	UNIT
ACCURACY AND DRIFT
	Output voltage accuracy	T_A = 25℃		–0.05		0.05	%
	Output voltage temperature coefficient	–40℃ ≤ T_A ≤ 105℃				12	ppm/℃
LINE AND LOAD REGULATION
ΔV_REF/ΔV_IN	Line regulation	V_REF < 2.5V; V_IN = V_REF + V_DO to V_INMAX;–40℃ ≤ T_A ≤ 105℃			40	160	ppm/V
ΔV_REF/ΔV_IN	Line regulation	V_REF ≥ 2.5V; V_IN = V_REF + V_DO to V_INMAX;–40℃ ≤ T_A ≤ 105℃			40	120	ppm/V
ΔV_REF/ΔI_L	Load regulation	I_L = 0mA to 10mA, V_IN= V_REF + V_DO	Source		20	60	ppm/mA
ΔV_REF/ΔI_L	Load regulation	I_L = 0mA to 5mA, V_IN= V_REF + V_DO	Sink		40	350	ppm/mA
POWER SUPPLY
V_IN	Input voltage ⁽¹⁾			V_REF + V_DO		6	V
I_Q	Quiescent current	Active mode	T_A = 25℃		0.65	0.9	µA
			–40℃ ≤ T_A ≤ 85℃			1.3
			–40℃ ≤ T_A ≤ 125℃			2.6
		Shutdown mode	T_A = 25℃			0.1
		Shutdown mode	–40℃ ≤ T_A ≤ 125℃			0.5
V_EN	Enable pin voltage	Active mode (EN = 1 or Float)		0.7 x V_IN			V
V_EN	Enable pin voltage	Shutdown mode (EN = 0)				0.3 x V_IN	V
I_EN	Enable pin current	V_EN = V_IN			0.05	0.1	uA
V_DO	Dropout voltage	I_L= 5mA				120	mV
V_DO	Dropout voltage	I_L = 10mA				250	mV
I_SC	Short circuit current, Sourcing	V_REF = 0V, T_A = 25℃			33		mA
I_SC	Short circuit current, Sinking	V_REF = V_IN V, T_A = 25℃			21		mA
TURN-ON TIME
t_ON	Turn-on time ⁽²⁾	0.1% settling, C_L= 1µF, V_REF = 2.5V			2		ms
NOISE
e_n	Output voltage noise	ƒ = 10Hz to 1kHz, C_L= 1µF			0.7		ppm_rms
e_np-p	Low-frequency noise	ƒ = 0.1Hz to 10Hz, V_REF ≥ 2.5V			3.8		ppm_p-p
e_np-p	Low-frequency noise	ƒ = 0.1Hz to 10Hz, V_REF < 2.5V			3.3		ppm_p-p
HYSTERESIS AND LONG-TERM STABILITY
	Long-term stability	0 to 1000h at 35°C			40		ppm
	Output voltage hysteresis	25°C, –40°C, 105°C, 25°C (cycle 1)			70		ppm
	Output voltage hysteresis	25°C, –40°C, 105°C, 25°C (cycle 2)			20		ppm
	Output voltage hysteresis	25°C, –40°C, 85°C, 25°C (cycle 1)			50		ppm
	Output voltage hysteresis	25°C, –40°C, 85°C, 25°C (cycle 2)			13		ppm
STABLE CAPACITANCE RANGE
	Input capacitor range			0.1			µF
	Output capacitor range ⁽³⁾			0.1		10	µF

(1) For V_REF = 1.024V to 1.5V, minimum V_IN = 1.7V

(2) Scales linearly with V_REF.

(3) ESR for the capacitor <= 400mΩ

6.6 Electrical Characteristics YBH package

At V_IN = V_REF + 0.5V, V_EN = V_IN, C_REF = 10µF, C_IN = 0.1µF, I_L = 0mA, minimum and maximum specifications at T_A = –40℃ to 125℃, typical specifications T_A = 25℃; unless otherwise noted

PARAMETER		TEST CONDITION		MIN	TYP	MAX	UNIT
ACCURACY AND DRIFT
	Output voltage accuracy	T_A = 25℃		–0.05		0.05	%
	Output voltage temperature coefficient	–40℃ ≤ T_A ≤ 85℃				10	ppm/℃
LINE AND LOAD REGULATION
ΔV_REF/ΔV_IN	Line regulation	V_REF < 2.5V; V_IN = V_REF + V_DO to V_INMAX			40	160	ppm/V
ΔV_REF/ΔV_IN	Line regulation	V_REF ≥ 2.5V; V_IN = V_REF + V_DO to V_INMAX			40	80	ppm/V
ΔV_REF/ΔI_L	Load regulation	I_L = 0mA to 10mA, V_IN= V_REF + V_DO	Source		20	60	ppm/mA
ΔV_REF/ΔI_L	Load regulation	I_L = 0mA to 5mA, V_IN= V_REF + V_DO	Sink		40	350	ppm/mA
POWER SUPPLY
V_IN	Input voltage ⁽¹⁾			V_REF + V_DO		6	V
I_Q	Quiescent current	Active mode	T_A = 25℃		0.65	0.9	µA
			–40℃ ≤ T_A ≤ 85℃			1.3
			–40℃ ≤ T_A ≤ 125℃			2.6
		Shutdown mode	T_A = 25℃			0.1
		Shutdown mode	–40℃ ≤ T_A ≤ 125℃			0.5
V_EN	Enable pin voltage	Active mode (EN = 1 or Float)		0.7 x V_IN			V
V_EN	Enable pin voltage	Shutdown mode (EN = 0)				0.3 x V_IN	V
I_EN	Enable pin current	V_EN = V_IN			0.05	0.1	uA
V_DO	Dropout voltage	I_L= 5mA				120	mV
V_DO	Dropout voltage	I_L = 10mA				250	mV
I_SC	Short circuit current, Sourcing	V_REF = 0V, T_A = 25℃			30		mA
I_SC	Short circuit current, Sinking	V_REF = V_IN V, T_A = 25℃			20		mA
TURNON TIME
t_ON	Turn-on time ⁽²⁾	0.1% settling, C_REF= 1µF, V_REF = 2.048V			2		ms
NOISE
e_n	Output voltage noise	ƒ = 10Hz to 1kHz			0.7		ppm_rms
e_np-p	Low frequency noise	ƒ = 0.1Hz to 10Hz, V_REF ≥ 2.5V			3.8		ppm_p-p
e_np-p	Low frequency noise	ƒ = 0.1Hz to 10Hz, V_REF < 2.5V			3.3		ppm_p-p
HYSTERESIS AND LONG-TERM STABILITY
	Long-term stability	0 to 1000h at 35°C			40		ppm
	Output voltage hysteresis	25°C, –40°C, 125°C, 25°C (cycle 1)			70		ppm
STABLE CAPACITANCE RANGE
	Input capacitor range			0.1			µF
	Output capacitor range ⁽³⁾			0.1		10	µF

(1) For V_REF = 1.024V to 1.5V, minimum V_IN = 1.7V.

(2) Scales linearly with V_REF.

(3) ESR for the capacitor can range from 10mΩ to 400mΩ.

6.7 Typical Characteristics

at T_A = 25°C, V_IN = V_EN = V_REF + 0.3V, I_L = 0mA, C_L = 10µF, C_IN = 0.1µF (unless otherwise noted)

REF35 Output Voltage
Drift vs Free-Air Temperature

SOT23 Package

Figure 6-1 Output Voltage Drift vs Free-Air Temperature

REF35 Temperature
Coefficient Distribution (VREF = 2.5V)

SOT23 Package

Figure 6-3 Temperature Coefficient Distribution (V_REF = 2.5V)

WCSP Package VREF < 2.5V (-40ºC to 85ºC)

Figure 6-5 Output Voltage Drift vs Free-Air Temperature

REF35 Temperature Coefficient Distribution

WCSP Package VREF < 2.5V (-40ºC to 85ºC)

Figure 6-7 Temperature Coefficient Distribution

WCSP Package VREF ≥ 2.5V (-40ºC to 125ºC)

Figure 6-9 Output Voltage Drift vs Free-Air Temperature

Figure 6-11 Initial Accuracy Distribution

REF35 0.1Hz to 10Hz Noise Distribution
(VREF = 2.5V, CNR = Open,
IL = 0mA)

Figure 6-13 0.1Hz to 10Hz Noise Distribution
(V_REF = 2.5V, C_NR = Open, I_L = 0mA)

REF35 0.1Hz to 10Hz Noise Distribution
(VREF = 2.5V, CL = 1μF,
IL = 0mA)

Figure 6-15 0.1Hz to 10Hz Noise Distribution
(V_REF = 2.5V, C_L = 1μF, I_L = 0mA)

REF35 Noise Density vs Frequency (VREF = 1.25V, IL = 0mA)

Figure 6-17 Noise Density vs Frequency
(V_REF = 1.25V, I_L = 0mA)

REF35 Noise Density vs Frequency (VREF = 5V, IL = 0mA)

Figure 6-19 Noise Density vs Frequency
(V_REF = 5V, I_L = 0mA)

REF35 Load Regulation
(Sinking 5mA) vs Free-Air Temperature

Figure 6-21 Load Regulation (Sinking 5mA) vs Free-Air Temperature

REF35 Load Transient
Response (VREF = 2.5V, CL = 10
μF)

Figure 6-23 Load Transient Response
(V_REF = 2.5V, C_L = 10 μF)

REF35 Load Transient Response (VREF = 2.5V, CL = 1μF)

Figure 6-25 Load Transient Response
(V_REF = 2.5V, C_L = 1μF)

REF35 Load Transient Response (VREF = 1.25V, CL = 1μF)

Figure 6-27 Load Transient Response
(V_REF = 1.25V, C_L = 1μF)

REF35 Line Transient
Response (VREF = 1.25V, CL = 1
μF)

Figure 6-29 Line Transient Response
(V_REF = 1.25V, C_L = 1 μF)

REF35 Power Supply Rejection Ratio (VREF = 2.5V, IL = 0mA)

Figure 6-31 Power Supply Rejection Ratio
(V_REF = 2.5V, I_L = 0mA)

REF35 Quiescent
Current vs Free-Air Temperature

Figure 6-33 Quiescent Current vs Free-Air Temperature

Figure 6-35 Solder Heat Shift Distribution

REF35 Long Term Stability WCSP - 2000 hours (VREF)

Figure 6-37 Long Term Stability WCSP - 2000 hours (V_REF)

REF35 Temperature Coefficient Distribution
(VREF = 1.25V)

SOT23 Package

Figure 6-2 Temperature Coefficient Distribution (V_REF = 1.25V)

REF35 Temperature
Coefficient Distribution (VREF = 5.0V)

SOT23 Package

Figure 6-4 Temperature Coefficient Distribution (V_REF = 5.0V)

WCSP Package VREF < 2.5V (-40ºC to 125ºC)

Figure 6-6 Output Voltage Drift vs Free-Air Temperature

WCSP Package VREF ≥ 2.5V (-40ºC to 85ºC)

Figure 6-8 Output Voltage Drift vs Free-Air Temperature

WCSP Package VREF ≥ 2.5V (-40ºC to 85ºC)

Figure 6-10 Temperature Coefficient Distribution

REF35 0.1Hz to 10Hz
Noise Distribution (VREF = 1.25V,
CNR = Open, IL = 0mA)

Figure 6-12 0.1Hz to 10Hz Noise Distribution
(V_REF = 1.25V, C_NR = Open, I_L = 0mA)

REF35 0.1Hz to 10Hz Noise Distribution
(VREF = 5V, CNR = Open,
IL = 0mA)

Figure 6-14 0.1Hz to 10Hz Noise Distribution
(V_REF = 5V, C_NR = Open, I_L = 0mA)

REF35 0.1Hz to 10Hz Noise Distribution
(VREF = 2.5V, CL = 1μF,
CNR = Open)

Figure 6-16 0.1Hz to 10Hz Noise Distribution
(V_REF = 2.5V, C_L = 1μF, C_NR = Open)

REF35 Noise Density vs Frequency (VREF = 2.5V, IL = 0mA)

Figure 6-18 Noise Density vs Frequency
(V_REF = 2.5V, I_L = 0mA)

REF35 Load Regulation
(Sourcing 10mA) vs Free-Air Temperature

Figure 6-20 Load Regulation (Sourcing 10mA) vs Free-Air Temperature

Figure 6-22 Load Transient Response
(V_REF = 2.5V, C_L = 10 μF)

Figure 6-24 Load Transient Response
(V_REF = 2.5V, C_L = 1μF)

Figure 6-26 Load Transient Response
(V_REF = 1.25V, C_L = 1μF)

REF35 Line Regulation
vs Free-Air Temperature

Figure 6-28 Line Regulation vs Free-Air Temperature

REF35 Line Transient Response (VREF = 2.5V, CL = 1μF)

Figure 6-30 Line Transient Response
(V_REF = 2.5V, C_L = 1μF)

Figure 6-32 Output Impedance

REF35 Dropout Voltage
vs Free-Air Temperature

Figure 6-34 Dropout Voltage vs Free-Air Temperature

REF35 Long Term
Stability SOT23 - 2000 hours (VREF)

Figure 6-36 Long Term Stability SOT23 - 2000 hours (V_REF)

7 Parameter Measurement Information

7.1 Solder Heat Shift

The materials used in the manufacture of the REF35 have differing coefficients of thermal expansion, resulting in stress on the device die when the part is heated. Mechanical and thermal stress on the device die can cause the output voltages to shift, degrading the initial accuracy specifications of the product. Reflow soldering is a common cause of this error.

To illustrate this effect, a total of 32 devices were soldered on one printed circuit board using lead-free solder paste and the paste manufacturer suggested reflow profile. Figure 7-1 shows the reflow profile. The printed circuit board is comprised of FR4 material. The board thickness is 1.66mm and the area is
174mm × 135mm.

Figure 7-1 Reflow Profile

The reference output voltage is measured before and after the reflow process; Figure 7-2 shows the typical shift. Although all tested units exhibit very low shifts (< 0.03%), higher shifts are also possible depending on the size, thickness, and material of the printed circuit board (PCB). An important note is that the histograms display the typical shift for exposure to a single reflow profile. Exposure to multiple reflows, as is common on PCBs with surface-mount components on both sides, causes additional shifts in the output bias voltage. If the PCB is exposed to multiple reflows, the device must be soldered in the last pass to minimize its exposure to thermal stress.

REF35 Solder Heat Shift
Distribution, VREF (%)

Figure 7-2 Solder Heat Shift Distribution, V_REF (%)