ZHCSP85D november   2021  – august 2023 TPSI3050-Q1

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Revision History
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety Limiting Values
    9. 6.9  Electrical Characteristics
    10. 6.10 Switching Characteristics
    11. 6.11 Insulation Characteristic Curves
    12. 6.12 Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Transmission of the Enable State
      2. 8.3.2 Power Transmission
      3. 8.3.3 Gate Driver
      4. 8.3.4 Modes Overview
      5. 8.3.5 Three-Wire Mode
      6. 8.3.6 Two-Wire Mode
      7. 8.3.7 VDDP, VDDH, and VDDM Undervoltage Lockout (UVLO)
      8. 8.3.8 Power Supply and EN Sequencing
      9. 8.3.9 Thermal Shutdown
    4. 8.4 Device Functional Modes
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Two-Wire or Three-Wire Mode Selection
        2. 9.2.2.2 Standard Enable, One-Shot Enable
        3. 9.2.2.3 CDIV1, CDIV2 Capacitance
        4. 9.2.2.4 RPXFR Selection
        5. 9.2.2.5 CVDDP Capacitance
        6. 9.2.2.6 Gate Driver Output Resistor
        7. 9.2.2.7 Start-up Time and Recovery Time
        8. 9.2.2.8 Supplying Auxiliary Current, IAUX From VDDM
        9. 9.2.2.9 VDDM Ripple Voltage
      3. 9.2.3 Application Curves
      4. 9.2.4 Insulation Lifetime
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Related Links
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表
  12. 11Mechanical, Packaging, and Orderable Information

Insulation Lifetime

Insulation lifetime projection data is collected by using industry-standard Time Dependent Dielectric Breakdown (TDDB) test method. In this test, all pins on each side of the barrier are tied together creating a two-terminal device and high voltage applied between the two sides; See Figure 9-12 for TDDB test setup. The insulation breakdown data is collected at various high voltages switching at 60 Hz over temperature. For reinforced insulation, VDE standard requires the use of TDDB projection line with failure rate of less than 1 part per million (ppm). Even though the expected minimum insulation lifetime is 20 years at the specified working isolation voltage, VDE reinforced certification requires additional safety margin of 20% for working voltage and 87.5% for lifetime which translates into minimum required insulation lifetime of 37.5 years at a working voltage that's 20% higher than the specified value.  

Figure 9-13 shows the intrinsic capability of the isolation barrier to withstand high voltage stress over its lifetime. Based on the TDDB data, the intrinsic capability of the insulation is 1000 VRMS with a lifetime of 1184 years.

GUID-590DD7E5-F55C-4C8F-8486-ECA1F1D7B06B-low.gif Figure 9-12 Test Setup for Insulation Lifetime Measurement
GUID-20221018-SS0I-7TJW-FBTT-BLNMX6GFW3QJ-low.svg Figure 9-13 Insulation Lifetime Projection Data