TPSI3050-Q1 是一款完全集成的隔离式开关驱动器,与外部电源开关结合使用时,可构成完整的隔离式固态继电器 (SSR)。当标称栅极驱动电压为 10 V、峰值拉电流和灌电流为 1.5/3.0A 时,可以选择多种外部电源开关来满足各种应用需求。TPSI3050-Q1 可通过初级侧电源自行产生次级偏置电源,因此无需隔离式次级电源偏置。而且,TPSI3050-Q1 可以有选择性地向外部配套电路供电,以满足不同的应用需求。
TPSI3050-Q1 根据所需的输入引脚数量,支持两种工作模式。在双线模式(通常用于驱动机械继电器)中,控制开关仅需两个引脚,并支持 6.5V 至 48V 的宽工作电压范围。在三线模式中,由外部提供 3V 至 5.5V 的初级侧电源,并通过独立的使能引脚控制开关。TPSI3050S-Q1 具有可实现开关控制的一次性启用功能,且仅在三线模式下可用。此功能对于驱动 SCR 非常有用,通常只需要一个电流脉冲即可触发。
次级侧可为驱动多种电源开关提供 10 V 的浮动稳压电源轨,无需次级偏置电源。具体用途包括为直流应用驱动单个电源开关,或为交流应用驱动两个背靠背电源开关,以及各种类型的 SCR。TPSI3050-Q1 集成式隔离保护功能非常稳健,与传统机械继电器和光耦合器相比,其可靠性更高、功耗更低,且温度范围更宽。
使用从 PXFR 引脚到 VSSP 的外部电阻器在七个功率等级设置中选择一个,以调节 TPSI3050-Q1 的功率传输。此操作可根据应用需求权衡功率损耗与次级侧功耗。
器件型号 | 封装(1) | 封装尺寸(标称值) |
---|---|---|
TPSI3050-Q1 | SOIC 8 引脚 (DWZ) | 7.50mm × 5.85mm |
TPSI3050S-Q1 |
Changes from Revision C (April 2023) to Revision D (August 2023)
Changes from Revision B (December 2022) to Revision C (April 2023)
Changes from Revision A (April 2022) to Revision B (December 2022)
Changes from Revision * (November 2021) to Revision A (April 2022)
PIN | I/O | TYPE(1) | DESCRIPTION | |
---|---|---|---|---|
NO. | NAME | |||
1 | EN | I | — | Active high driver enable |
2 | PXFR | I | — | Power transfer can be adjusted by selecting one of seven power level settings using an external resistor from the PXFR pin to VSSP. In three-wire mode, a given resistor setting sets the duty cycle of the power converter (see Table 8-1) and hence the amount of power transferred. In two-wire mode, a given resistor setting adjusts the current limit of the EN pin (see Table 8-2) and hence the amount of power transferred. |
3 | VDDP | — | P | Power supply for primary side |
4 | VSSP | — | GND | Ground supply for primary side |
5 | VSSS | — | GND | Ground supply for secondary side |
6 | VDDM | — | P | Generated mid supply |
7 | VDDH | — | P | Generated high supply |
8 | VDRV | O | — | Active high driver output |
PARAMETER(1) | MIN | MAX | UNIT | |
---|---|---|---|---|
Primary Side Supply(2) | VDDP | –0.3 | 6 | V |
EN | –0.3 | 60 | V | |
PXFR | –0.3 | 60 | V | |
Secondary Side Supply(3) | VDRV | –0.3 | 12 | V |
VDDH | –0.3 | 12 | V | |
VDDM | –0.3 | 6 | V | |
VDDH – VDDM | –0.3 | 6 | V | |
Junction temperature, TJ | –40 | 150 | °C | |
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per AEC Q100-002(1) HBM ESD classification level 2 |
±2000 | V | |
Charged device model (CDM), per AEC Q100-011 CDM ESD classification level C4B |
Corner pins (1, 4, 5, and 8) | ±750 | |||
Other pins | ±500 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VDDP | Primary side supply voltage three-wire mode(1) | 3.0 | 5.5 | V | |
EN | Enable in two-wire mode(1) | 0 | 48.0 | V | |
Enable in three-wire mode(1) | 0 | 5.5 | V | ||
PXFR | Power transfer control(1) | 0 | 5.5 | V | |
CVDDP | Decoupling capacitance on VDDP and VSSP, two-wire mode(3) | 220 | 330 | nF | |
Decoupling capacitance on VDDP and VSSP, three-wire mode(3) | 0.22 | 20 | µF | ||
CDIV1(2) | Decoupling capacitance across VDDH and VDDM(3) | 0.003 | 40 | µF | |
CDIV2(2) | Decoupling capacitance across VDDM and VSSS(3) | 0.003 | 40 | µF | |
TA | Ambient operating temperature | –40 | 125 | °C | |
TJ | Operating junction temperature | –40 | 150 | °C | |
|ΔVEN/Δt| | EN rise and fall rates, two-wire mode. | 65 | V/ms |
THERMAL METRIC(1) | DEVICE | UNIT | |
---|---|---|---|
DWZ(SOIC) | |||
8 PINS | |||
RϴJA | Junction-to-ambient thermal resistance | 89.3 | °C/W |
RϴJC(top) | Junction-to-case (top) thermal resistance | 40.3 | °C/W |
RΘJB | Junction-to-board thermal resistance | 45.2 | °C/W |
ψJT | Junction-to-top characterization parameter | 10.3 | °C/W |
ΨJB | Junction-to-board characterization parameter | 44.4 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
PD | Maximum power dissipation, VDDP. | VVDDP = 5 V, RPXFR = 20 kΩ, three-wire mode, CVDRV = 100 pF, CDIV1 = CDIV2 = 100 nF, fEN = 1-kHz square wave, VEN = 5 V peak to peak. |
250 | mW | ||
Maximum power dissipation, EN. | RPXFR = 20 kΩ, two-wire mode, CVDRV = 100 pF, CDIV1 = CDIV2 = 100 nF, fEN = 1-kHz square wave, VEN = 48 V peak to peak. |
350 | mW |