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  • TPS7H2211-SP 和 TPS7H2211-SEP 耐辐射保障 (RHA) 14V、3.5A 电子保险丝

    • ZHCSOS3F August   2021  – March 2024 TPS7H2211-SEP , TPS7H2211-SP

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  • TPS7H2211-SP 和 TPS7H2211-SEP 耐辐射保障 (RHA) 14V、3.5A 电子保险丝
  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Device Options
  6. 5 Related Products
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics: All Devices
    6. 7.6  Electrical Characteristics: CFP and KGD Options
    7. 7.7  Electrical Characteristics: HTSSOP Option
    8. 7.8  Switching Characteristics: All Devices
    9. 7.9  Quality Conformance Inspection
    10. 7.10 Typical Characteristics
  9. 8 Parameter Measurement Information
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Enable and Overvoltage Protection
      2. 9.3.2 Current Limit
      3. 9.3.3 Soft Start (Adjustable Rise Time)
      4. 9.3.4 Parallel Operation
      5. 9.3.5 Reverse Current Protection
      6. 9.3.6 Forward Leakage Current
    4. 9.4 Device Functional Modes
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Application 1: Cold Sparing
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
          1. 10.2.1.2.1 Capacitance
          2. 10.2.1.2.2 Enable Control
          3. 10.2.1.2.3 Overvoltage Protection
          4. 10.2.1.2.4 Soft Start Time
          5. 10.2.1.2.5 Summary
        3. 10.2.1.3 Application Curve
      2. 10.2.2 Application 2: Protection
        1. 10.2.2.1 Design Requirements
        2. 10.2.2.2 Detailed Design Procedure
          1. 10.2.2.2.1 Capacitance
          2. 10.2.2.2.2 Enable Control
          3. 10.2.2.2.3 Overvoltage Protection
          4. 10.2.2.2.4 Soft Start Time
          5. 10.2.2.2.5 Summary
        3. 10.2.2.3 Application Curve
    3. 10.3 Power Supply Recommendations
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
      2. 10.4.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information
  15. 重要声明
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Data Sheet

TPS7H2211-SP 和 TPS7H2211-SEP 耐辐射保障 (RHA)
14V、3.5A 电子保险丝

本资源的原文使用英文撰写。 为方便起见，TI 提供了译文；由于翻译过程中可能使用了自动化工具，TI 不保证译文的准确性。 为确认准确性，请务必访问 ti.com 参考最新的英文版本（控制文档）。

下载最新的英语版本

1 特性

  • 电离辐射总剂量 (TID) 特征值高达 100krad (Si)
    • 提供的耐辐射保障为 100krad (Si)
  • 确定了单粒子效应 (SEE)
    • 单粒子锁定 (SEL)、单粒子烧毁 (SEB) 和单粒子栅穿 (SEGR) 对于线性能量传递 (LET) 的抗扰度高达 75MeV-cm2/mg*
    • 单粒子功能中断 (SEFI) 和单粒子瞬变 (SET) 对于 LET 的额定抗扰度 = 75MeV-cm2/mg*
  • 集成式单通道电子保险丝
  • 输入电压范围：4.5V 至 14V
  • 在 25°C 和 VIN = 12V 下的低导通电阻 (RON) 最大为 60mΩ
  • 3.5A 最大连续开关电流
  • 低控制输入阈值支持使用
    1.2V、1.8V、2.5V 和 3.3V 逻辑电平
  • 可配置上升时间（软启动）
  • 反向电流保护 (RCP)
  • 过压保护 (OVP)
  • 内部电流限制（快速跳变）
  • 热关断
  • 带散热焊盘的陶瓷和塑料封装
  • 支持军用（–55°C 至 125°C）温度范围
*请参阅 TPS7H2211-SP SEE 辐射报告，了解测试条件和完整信息

2 应用

  • 卫星电力系统 (EPS)
  • 冷备用电源（冗余）
  • 电源时序
  • 命令和数据处理
  • 通信负载
  • 耐辐射电源树

3 说明

TPS7H2211 是一款单通道电子保险丝（具有附加功能的集成 FET 负载开关），可提供反向电流保护、过压保护和可配置的上升时间，以便更大限度减少浪涌电流（软启动）。此器件包含一个可在 4.5V 至 14V 输入电压范围内运行的 P 沟道 MOSFET，并且支持最大 3.5A 的持续电流。

开关由可与低压控制信号直接连接的打开和关闭输入 (EN) 控制。过压保护和软启动可通过 OVP 和 SS 引脚使用很少的外部组件进行编程。TPS7H2211 采用具有外露散热焊盘的陶瓷和塑料封装，可提高散热性能。QML 5962R1822001VXC 提供了标准微电路图 (SMD)。-SEP 型号 V62/23609 提供了供应商项目图 (VID)。

器件信息
器件型号(1) 等级(2) 封装
5962R1822001VXC 飞行等级 QMLV-RHA 100krad (Si) 16 引脚 CFP 11.00mm × 9.60mm 质量 = 1.56g(4)
5962-1822001VXC 飞行等级 QMLV
TPS7H2211HKR/EM 工程样片(3)
TPS7H2211MDAPTSEP 9 月 32 引脚 HTSSOP 6.10mm × 11.00mm 质量 = 0.184g(4)
TPS7H2211EVM-CVAL 评估模块 评估板
(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附录。另请参阅器件选项表。
(2) 有关器件等级的其他信息，请查看 SLYB235。
(3) 这些器件仅适用于工程评估。器件按照不合规的流程进行加工处理。这些器件不适用于鉴定、量产、辐射测试或飞行。也不保证这些器件在 MIL 规定的 –55°C 至 125°C 完整温度范围内或运行寿命中的性能。
(4) 质量误差在 ±10% 以内。
GUID-20230213-SS0I-CR91-WLHW-PJLK6DBFW4DM-low.svg简化原理图

4 Device Options

GENERIC PART NUMBER RADIATION RATING(1) GRADE(2) PACKAGE ORDERABLE PART NUMBER
TPS7H2211-SP TID of 100 krad(Si) RLAT,
DSEE free to 75 MeV-cm2/mg		 QMLV-RHA 16-pin HKR CFP 5962R1822001VXC
QMLP-RHA 32-pin DAP HTSSOP 5962R1822002PYE
QMLV 16-pin HKR CFP 962-1822001VXC
KGD (QMLV-RHA) Die 5962R1822001V9A
None Engineering model (3) 16-pin HKR CFP TPS7H2211HKR/EM
Die TPS7H2211Y/EM
TPS7H2211-SEP TID of 50 krad(Si) RLAT,
DSEE free to 43 MeV-cm2/mg		 Space Enhanced Plastic 32-pin DAP HTSSOP TPS7H2211MDAPTSEP
(1) TID is total ionizing dose and DSEE is destructive single event effects. Additional information is available in the associated TID reports and SEE reports for each product.
(2) For additional information about part grade, view SLYB235.
(3) These units are intended for engineering evaluation only. They are processed to a non-compliant flow (such as no burn-in and only 25°C testing). These units are not suitable for qualification, production, radiation testing, or flight use. Parts are not warranted as to performance over temperature or operating life.

5 Related Products

DEVICE VIN RANGE MAXIMUM OUTPUT CURRENT PROGRAMMABLE CURRENT LIMIT CURRENT SENSE
TPS7H2211 4.5 V to 14 V 3.5 A No No
TPS7H2201 1.5 V to 7 V 6 A Yes Yes

6 Pin Configuration and Functions

HKR Package DAP Package
16-Pin CFP With Thermal Pad 32-Pin HTSSOP With Thermal Pad
Top View Top View
GUID-099BF11F-374E-4E2B-9E13-0C95307A150C-low.png GUID-20230213-SS0I-25WZ-DJJP-54Z39X534WLQ-low.svg
Table 6-1 Pin Functions
PIN I/O(1) DESCRIPTION
HKR (16) NO. PW(32) NO. NAME
1-4 1-10 VIN I Switch input. An input bypass capacitor is recommended for minimizing VIN dip.
6 12 EN I Active high switch control input. Do not float this pin.
7 13 OVP I Overvoltage protection. Set using an external resistor divider. If no OVP is desired, connect this pin to GND. Do not float this pin.
8 15 GND — Device ground. (2)
12 22 SS I/O Soft start (switch slew rate control). If this functionality is not desired, the SS pin must be left disconnected (floating). In all cases be sure to follow the requirements of Section 9.3.3.
13-16 23-32 VOUT O Switch output. A minimum 10-µF output capacitor is recommended.
5, 9-11 11,14,16,17-21 NC — NC — No connect. These pins are not internally connected. It is recommended to connect these pins to GND to prevent charge buildup; however, these pins can also be left open or tied to any voltage between GND and VIN.
— Thermal Pad — Thermal pad (exposed center pad) for heat dissipation purposes. The thermal pad is internally connected to the seal ring and GND.
— Metal Lid — The lid is internally connected to the thermal pad and GND through the seal ring.
  1. I = Input, O = Output, I/O = Input or Output, — = Other
  2. Thermal pad is internally connected to the seal ring and GND for HKR option.
Table 6-2 Bare Die Information
DIE THICKNESS BACKSIDE FINISH BACKSIDE POTENTIAL BOND PAD METALLIZATION COMPOSITION BOND PAD THICKNESS
15 mils Silicon with backgrind Ground AlCu 1050 nm
GUID-20210331-CA0I-GXPW-8M17-V59HJXL0R6HD-low.png
  1. All dimensions in microns (μm).
  2. The inner rectangle is the die and the outer rectangle is the die plus scribe lines.
Table 6-3 Bond Pad Coordinates in Microns (μm)
DESCRIPTION PAD NUMBER X MIN Y MIN X MAX Y MAX
VIN 1 653.22 4936.95 793.17 5076.9
VIN 2 152.37 4936.95 292.32 5076.9
VIN 3 319.32 4936.95 459.27 5076.9
VIN 4 486.27 4936.95 626.22 5076.9
VIN 5 152.37 4770 292.32 4909.95
VIN 6 319.32 4770 459.27 4909.95
VIN 7 486.27 4770 626.22 4909.95
VIN 8 653.22 4770 793.17 4909.95
VIN 9 152.37 4579.16 292.32 4719.11
VIN 10 319.32 4579.16 459.27 4719.11
VIN 11 486.27 4579.16 626.22 4719.11
VIN 12 653.22 4579.16 793.17 4719.11
VIN 13 152.37 4412.21 292.32 4552.16
VIN 14 319.32 4412.21 459.27 4552.16
VIN 15 486.27 4412.21 626.22 4552.16
VIN 16 653.22 4412.21 793.17 4552.16
VIN 17 152.37 3553.11 292.32 3693.06
VIN 18 319.32 3553.11 459.27 3693.06
VIN 19 486.27 3553.11 626.22 3693.06
VIN 20 653.22 3553.11 793.17 3693.06
VIN 21 152.37 3386.16 292.32 3526.11
VIN 22 319.32 3386.16 459.27 3526.11
VIN 23 486.27 3386.16 626.22 3526.11
VIN 24 653.22 3386.16 793.17 3526.11
VINA(1) 25 54.99 1823.09 194.94 1963.04
VINA(1) 26 54.99 1652.54 194.94 1792.49
NC 27 54.99 1480.77 194.94 1620.72
NC 28 54.99 1238.72 194.94 1378.67
EN 29 54.99 972.68 194.94 1112.63
NC 30 54.99 581.31 194.94 721.26
OVP 31 54.99 406.26 194.94 546.21
GND 32 407.21 54.99 547.16 194.94
GND 33 577.76 54.99 717.71 194.94
NC 34 2792.88 54.99 2932.83 194.94
NC 35 3315.06 587.43 3455.01 727.38
NC 36 3315.06 1099.26 3455.01 1239.21
SS 37 3315.06 1544.09 3455.01 1684.04
VOUT 38 3217.64 3386.16 3357.59 3526.11
VOUT 39 3050.69 3386.16 3190.64 3526.11
VOUT 40 2883.74 3386.16 3023.69 3526.11
VOUT 41 2716.79 3386.16 2856.74 3526.11
VOUT 42 3217.64 3553.11 3357.59 3693.06
VOUT 43 3050.69 3553.11 3190.64 3693.06
VOUT 44 2883.74 3553.11 3023.69 3693.06
VOUT 45 2716.79 3553.11 2856.74 3693.06
VOUT 46 3217.64 4412.21 3357.59 4552.16
VOUT 47 3050.69 4412.21 3190.64 4552.16
VOUT 48 2883.74 4412.21 3023.69 4552.16
VOUT 49 2716.79 4412.21 2856.74 4552.16
VOUT 50 3217.64 4579.16 3357.59 4719.11
VOUT 51 3050.69 4579.16 3190.64 4719.11
VOUT 52 2883.74 4579.16 3023.69 4719.11
VOUT 53 2716.79 4579.16 2856.74 4719.11
VOUT 54 3217.64 4770 3357.59 4909.95
VOUT 55 3050.69 4770 3190.64 4909.95
VOUT 56 2883.74 4770 3023.69 4909.95
VOUT 57 2716.79 4770 2856.74 4909.95
VOUT 58 3217.64 4936.95 3357.59 5076.9
VOUT 59 3050.69 4936.95 3190.64 5076.9
VOUT 60 2883.74 4936.95 3023.69 5076.9
VOUT 61 2716.79 4936.95 2856.74 5076.9
(1) VINA supplies internal circuitry. Connect VINA to VIN in a single point manner.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted); all voltages referenced to GND(1)
MIN MAX UNIT
VIN Input voltage pins –0.5 16 V
VOUT Output voltage pins –0.5 16 V
SS Soft start pin –0.3 16 V
EN, OVP Enable and over voltage protection pins –0.3 7.5 V
IIN, IOUT Continuous switch current 5.4 A
IIN_PLS, IOUT_PLS Pulsed switch current (t ≤ 5 µs) 30 A
TJ Junction temperature –55 150 °C
Tstg Storage temperature –65 150 °C
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per ANSI/ESDA/JEDEC specification JS-002(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted); all voltages referenced to GND
MIN MAX UNIT
VIN Input voltage pins 4.5 14 V
VOUT Output voltage pins 0 14(1) V
EN, OVP Enable and overvoltage pins 0 7 V
VINSR Input voltage slew rate 0.015 V/µs
IIN, IOUT Continuous switch current 3.5 A
TJ Operating junction temperature(2) –55 125 °C
(1) This maximum VOUT voltage is only applicable when the device is disabled (EN = Low). When the device is enabled (EN = High), the maximum VOUT voltage is the input voltage, VIN.
(2) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature [TA(max)] is dependent on the maximum operating junction temperature [TJ(max)], the maximum power dissipation of the device in the application [PD(max)], and the junction-to-ambient thermal resistance of the part/package in the application (θJA), as given by the equation: TA(max) = TJ(max) – (θJA × PD(max))

7.4 Thermal Information

THERMAL METRIC(1) TPS7H2211-SP TPS7H2211-SEP UNIT
HKR (CFP) DAP (HTSSOP)
16 PINS 32 PINS
RθJA Junction-to-ambient thermal resistance 23 23.5 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 5.4 11.2
RθJB Junction-to-board thermal resistance 7.7 5.4
ψθJT Junction-to-top characterization parameter 1.3 0.1
ψθJB Junction-to-board characterization parameter 7.4 5.4
RθJC(bot) Junction-to-case (bottom) thermal resistance 0.33 0.5
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics: All Devices

over operating ambient temperature range TA = –55°C to 125°C, VIN = 4.5 to 14 V, COUT = 10 µF, and all voltages referenced to GND (unless otherwise noted); includes group E radiation testing at TA = 25°C for RHA devices(1)
PARAMETER TEST CONDITIONS SUB-
GROUP(2)		 MIN TYP MAX UNIT
POWER SUPPLIES AND CURRENTS
VINUVLOR Internal VIN UVLO rising 1, 2, 3 3.2 3.4 3.8 V
VINUVLOF Internal VIN UVLO falling 1, 2, 3 2.6 2.9 3.2 V
HYSTVIN-UVLO Internal VIN UVLO hysteresis 1, 2, 3 0.55 0.75 V
IQ Quiescent current IOUT = 0 mA, EN = 7 V 1, 2, 3 5 10 mA
IF VIN to VOUT forward leakage current EN = 0 V, VOUT = 0 V, measured VOUT current VIN = 14 V 1, 2, 3 1 1.3 mA
VIN = 12 V 1, 2, 3 0.65 0.94
VIN = 9 V 1, 2, 3 0.15 0.49
VIN = 4.5 V 1, 2, 3 0.04 0.23
ISD VIN VIN off-state supply current EN = 0 V, VOUT = 0 V, measured VIN current VIN = 14 V 1, 2, 3 6.9 10 mA
VIN = 12 V 1, 2, 3 5.9 9.5
VIN = 9 V 1, 2, 3 4.4 8
VIN = 4.5 V 1, 2, 3 3.7 7
VRCP_ENTER Reverse current protection enter voltage(3) EN = 7 V, see Figure 8-1 VIN = 4.5 V 1 390 mV
VIN = 14 V 1 363
VRCP_EXIT Reverse current protection exit voltage(3) EN = 7 V, see Figure 8-2 VIN = 4.5 V 1 264 mV
VIN = 14 V 1 249
tRCP Reverse current protection response time EN = 7 V, see Figure 8-1 VIN = 4.5 V 9 208 µs
VIN = 14 V 9 247
IRCP Reverse current protection leakage current EN = 0 V, VOUT = 0 to 14 V and VOUT > VIN 1, 2, 3 44 250 µA
EN = 7 V, VIN = 0 V, VOUT = 0 to 14 V 1, 2, 3 37 240
SOFT START
ISS Soft start charge current 1, 2, 3 65 83 µA
ENABLE (EN) INPUT
VINEN VIN percentage for enable (4) 1, 2, 3 75%
IEN EN pin input leakage current EN = 7 V, VIN = 14 V 1, 2, 3 2 12 nA
OVERVOLTAGE PROTECTION (OVP)
IOVP OVP pin input leakage current OVP = 7 V 1, 2, 3 1.5 12 nA
CURRENT LIMIT
IL_trip Internal current limit trip point VIN = 12 V, CSS = 2 nF 1 8 A
IL_peak Fast trip off current limit peak VIN = 12 V, 10 Ω to 10 mΩ short in 1 µs,
switch inductance = 270 nH		 1 25 A
tftr Fast trip off response time 9 2.3 µs
tfto Fast trip off off-time VIN = 12 V, CSS = 2 nF 9 51 µs
THERMAL SHUTDOWN
Thermal shutdown 155 °C
Thermal shutdown hysteresis 20 °C
(1) See the 5962-18220 SMD (standard microcircuit drawing) for additional information on the RHA devices.
(2) For subgroup definitions, see the Quality Conformance Inspection table
(3) This parameter is not referenced to GND; it is referenced from VOUT to VIN.
(4) VIN must be ≥ 75% of its final value before EN is asserted only if VINSR > VOUTSR.

7.6 Electrical Characteristics: CFP and KGD Options

over operating ambient temperature range TA = –55°C to 125°C, VIN = 4.5 to 14 V, COUT = 10 µF, and all voltages referenced to GND (unless otherwise noted); includes group E radiation testing at TA = 25°C for RHA devices(1)
PARAMETER TEST CONDITIONS SUB-
GROUP(2)		 MIN TYP MAX UNIT
ENABLE (EN) INPUT
VIHEN EN threshold voltage, rising 1, 2, 3 0.60 0.63 0.68 V
VILEN EN threshold voltage, falling 1, 2, 3 0.50 0.52 0.57
HYSTEN EN hysteresis voltage 1, 2, 3 94 109 139 mV
tLOW_OFF EN signal low time during cycling  VOUT falls to < 90%, see RTIMER = 0 V,  see Figure 8-3 9, 10, 11 20 µs
OVERVOLTAGE PROTECTION (OVP)
VOVPR OVP threshold voltage, rising 1, 2, 3 1.11 1.15 1.18 V
VOVPF OVP threshold voltage, falling 1, 2, 3 1.09 1.14 1.17
HYSTOVP OVP hysteresis voltage 4.6 V < VIN < 14 V 1, 2, 3 5 14 40 mV
RESISTANCE CHARACTERISTICS
RON On-state resistance,
lead length ≈ 2.5 mm		 VIN = 14 V, IOUT = 3.5 A –55°C 3 41 45 mΩ
–40°C 43 46
25°C 1 54 60
85°C 65 71
125°C 2 72 79
VIN = 12 V, IOUT = 3.5 A –55°C 3 41 45
–40°C 43 46
25°C 1 54 60
85°C 65 71
125°C 2 72 79
VIN = 9 V, IOUT = 3.5 A –55°C 3 41 45
–40°C 43 46
25°C 1 54 61
85°C 65 71
125°C 2 72 79
VIN = 6 V, IOUT = 3.5 A –55°C 3 41 45
–40°C 43 47
25°C 1 54 61
85°C 65 71
125°C 2 72 79
VIN = 4.5 V, IOUT = 3.5 A –55°C 3 44 48
–40°C 47 50
25°C 1 59 65
85°C 71 76
125°C 2 79 84
(1) See the 5962-18220 SMD (standard microcircuit drawing) for additional information on the RHA devices.
(2) For subgroup definitions, see the Quality Conformance Inspection table

7.7 Electrical Characteristics: HTSSOP Option

over operating ambient temperature range TA = –55°C to 125°C, VIN = 4.5 to 14 V, COUT = 10 µF, and all voltages referenced to GND (unless otherwise noted); includes group E radiation testing at TA = 25°C for RHA devices(1)
PARAMETER TEST CONDITIONS SUB-
GROUP(2)		 MIN TYP MAX UNIT
ENABLE (EN) INPUT
VIHEN EN threshold voltage, rising 1, 2, 3 0.59 0.63 0.67 V
VILEN EN threshold voltage, falling 1, 2, 3 0.49 0.52 0.55
HYSTEN EN hysteresis voltage 1, 2, 3 95 106 116
tLOW_OFF EN signal low time during cycling  VOUT falls to < 90%, see RTIMER = 0 V,  see Figure 8-3 9, 10, 11 47 µs
OVERVOLTAGE PROTECTION (OVP)
VOVPR OVP threshold voltage, rising 1, 2, 3 1.07 1.15 1.22 V
VOVPF OVP threshold voltage, falling 1, 2, 3 1.04 1.12 1.19
HYSTOVP OVP hysteresis voltage 4.6 V < VIN < 14 V 1, 2, 3 24 28 33 mV
RESISTANCE CHARACTERISTICS
RON On-state resistance,
lead length ≈ 2.5 mm		 VIN = 14 V, IOUT = 3.5 A –55°C 3 35.6 37 mΩ
–40°C 37.5
25°C 1 44.3 46
85°C 53.7
125°C 2 56.3 60
VIN = 12 V, IOUT = 3.5 A –55°C 3 35.3 37
–40°C 37.3
25°C 1 44 46
85°C 53.4
125°C 2 56 59
VIN = 9 V, IOUT = 3.5 A –55°C 3 35 36
–40°C 37
25°C 1 43.6 45
85°C 53
125°C 2 55 58
VIN = 6 V, IOUT = 3.5 A –55°C 3 34.8 36
–40°C 37
25°C 1 43.5 45
85°C 53
125°C 2 55.3 58
VIN = 4.5 V, IOUT = 3.5 A –55°C 3 37.7 39
–40°C 40
25°C 1 47.6 49
85°C 58
125°C 2 61 63
(1) See the 5962-18220 SMD (standard microcircuit drawing) for additional information on the RHA devices.
(2) For subgroup definitions, see the Quality Conformance Inspection table

7.8 Switching Characteristics: All Devices

over operating ambient temperature TA = 25°C, COUT = 10 µF, CSS = 2 nF, RLOAD = 10 Ω (unless otherwise noted); all voltages referenced to GND
PARAMETER TEST CONDITIONS SUBGROUP(1) MIN TYP MAX UNIT
VIN =  5 V
tON Turn-on time See Figure 8-4 9 107 µs
tOFF Turn-off time 56 µs
tF VOUT fall time 167 µs
tASSERT OVP assert time See Figure 8-5 9 8 µs
tDEASSERT OVP deassert time 41 µs
VIN = 12 V
tON Turn-on time See Figure 8-4 9 220 µs
tOFF Turn-off time 41 µs
tF VOUT fall time 139 µs
tASSERT OVP assert time See Figure 8-5 9 6 µs
tDEASSERT OVP deassert time 63 µs
(1) For subgroup definitions, see the Quality Conformance Inspection table

7.9 Quality Conformance Inspection

MIL-STD-883, Method 5005 - Group A

SUBGROUP DESCRIPTION TEMPERATURE (°C)
1 Static tests at 25
2 Static tests at 125
3 Static tests at –55
4 Dynamic tests at 25
5 Dynamic tests at 125
6 Dynamic tests at –55
7 Functional tests at 25
8A Functional tests at 125
8B Functional tests at –55
9 Switching tests at 25
10 Switching tests at 125
11 Switching tests at –55

7.10 Typical Characteristics

GUID-20210325-CA0I-KBXV-BZWH-HMG7PKXNDVXT-low.svgFigure 7-1 IQ vs Temperature Across VIN
GUID-20210325-CA0I-NMPF-PCMQ-B89B2DCMWDV6-low.svg
 
Figure 7-3 ISD vs Temperature Across VIN
GUID-20210325-CA0I-XC5K-P4SZ-DZRTQJ57KWWT-low.svg
VIN = 0 V
Figure 7-5 IRCP vs Temperature Across VOUT With EN = 0 V
GUID-20210325-CA0I-MZ67-9PF1-GZVK1QGWVKRJ-low.svg
No observed VIN dependency across measured values
Figure 7-7 VIHEN vs Temperature Across VIN
GUID-20210325-CA0I-J2XL-X7LW-3WK7QVKCXLWC-low.svg
No observed VIN dependency across measured values
Figure 7-9 VOVPR vs Temperature for CFP and KGD Across VIN
GUID-20230630-SS0I-7BRR-S05H-3RQJ6828VQSJ-low.svg
Figure 7-11 VOVPR vs Temperature for HTSSOP Across VIN
GUID-20210325-CA0I-ZZVV-1S4K-8RN88CXKFPW5-low.svg
Figure 7-13 On-Resistance vs Temperature Across Loads for CFP and KGD at VIN = 4.5 V
GUID-20210406-CA0I-K7TV-MVVJ-SXMRSRXRZRKL-low.svg
Figure 7-15 On-Resistance vs Temperature Across Loads for CFP and KGD at VIN = 9 V
GUID-20210406-CA0I-BFZL-MGFG-5SF2LNMN8Q1B-low.svg
Figure 7-17 On-Resistance vs Temperature Across Loads for CFP and KGD at VIN = 14 V
GUID-20230629-SS0I-D1GS-GLCW-GZHF8BQTJTDZ-low.svg
Figure 7-19 On-Resistance vs Temperature Across Loads for HTSSOP at VIN = 6 V
GUID-20230629-SS0I-WN5G-QNWH-6LHXJKH7GRRW-low.svg
Figure 7-21 On-Resistance vs Temperature Across Loads for HTSSOP at VIN = 12 V
GUID-20210325-CA0I-P2ZJ-B0GH-V2PDSXMDMHRL-low.svgFigure 7-2 IF vs Temperature Across VIN
GUID-20210325-CA0I-5SN0-BK45-WQMPT8PK46VQ-low.svg
VIN = 0 V
Figure 7-4 IRCP vs Temperature Across VOUT With EN = 7 V
GUID-20210325-CA0I-RRBS-HG7M-ZKQHGZGGX5TL-low.svg
 
Figure 7-6 ISS vs Temperature Across VIN
GUID-20210325-CA0I-6BTF-W4MS-Q0GBPZ3DNB6F-low.svg
No observed VIN dependency across measured values
Figure 7-8 VILEN vs Temperature Across VIN
GUID-20210325-CA0I-TN8K-2HN0-1G8QJCWBXRB9-low.svg
No observed VIN dependency across measured values
Figure 7-10 VOVPF vs Temperature for CFP and KGD Across VIN
GUID-20230630-SS0I-DTNW-MQJD-RZ8KTVSPTKS7-low.svg
Figure 7-12 VOVPF vs Temperature for HTSSOP Across VIN
GUID-20210406-CA0I-CPMS-BGZQ-KF2TQX27KXVH-low.svg
Figure 7-14 On-Resistance vs Temperature Across Loads for CFP and KGD at VIN = 6 V
GUID-20210406-CA0I-9JQC-G5V7-1K3CG4PV0GLF-low.svg
Figure 7-16 On-Resistance vs Temperature Across Loads for CFP and KGD at VIN = 12 V
GUID-20230629-SS0I-J273-NQZ7-STFSJ5GP128C-low.svg
Figure 7-18 On-Resistance vs Temperature Across Loads for HTSSOP at VIN = 4.5 V
GUID-20230629-SS0I-1JJG-SPXJ-PKPC74PCSHCX-low.svg
Figure 7-20 On-Resistance vs Temperature Across Loads for HTSSOP at VIN = 9 V
GUID-20230629-SS0I-M177-ZDQM-WBHPNJHSZNTH-low.svg
Figure 7-22 On-Resistance vs Temperature Across Loads for HTSSOP at VIN = 14 V

 
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