ZHCSKC1D
January 2007 – October 2019
TPS2412
,
TPS2413
PRODUCTION DATA.
1
特性
2
应用
3
说明
Device Images
典型应用图
4
修订历史记录
5
Device Comparison Table
6
Pin Configuration and Functions
Pin Functions
7
Specifications
7.1
Absolute Maximum Ratings
7.2
ESD Ratings
7.3
Recommended Operating Conditions
7.4
Thermal Information
7.5
Electrical Characteristics
7.6
Dissipation Ratings
7.7
Typical Characteristics
8
Detailed Description
8.1
Overview
8.2
Functional Block Diagram
8.3
Feature Description
8.3.1
Definitions
8.3.2
TPS2412 vs TPS2413 – MOSFET Control Methods
8.3.3
N+1 Power Supply – Typical Connection
8.3.4
Input ORing – Typical Connection
8.3.5
System Design and Behavior With Transients
8.3.6
TPS2412 Regulation-Loop Stability
8.3.7
MOSFET Selection and R(RSET)
8.3.8
Gate Drive, Charge Pump and C(BYP)
8.4
Device Functional Modes
9
Application and Implementation
9.1
Application Information
9.2
Typical Application
9.2.1
Design Requirements
9.2.2
Detailed Design Procedure
9.2.3
Application Curves
10
Power Supply Recommendations
10.1
Recommended Operating Range
10.2
VDD, BYP, and Powering Options
11
Layout
11.1
Layout Guidelines
11.2
Layout Example
12
器件和文档支持
12.1
相关链接
12.2
社区资源
12.3
商标
12.4
静电放电警告
12.5
Glossary
13
机械、封装和可订购信息
7.7
Typical Characteristics
Figure 1.
TPS2412 V
(AC)
Regulation Voltage vs Temperature
Figure 3.
Pulsed Gate Sinking Current vs Gate Voltage
Figure 5.
V
DD
Current vs V
DD
Voltage (Gate Saturated High)
Figure 2.
Fast Turnoff Threshold vs Temperature
Figure 4.
Turnon Delay vs V
DD
(Power Applied Until Gate is Active)
Figure 6.
Turnoff Time With
C
(GATE)
= 10 nF and V
(AC)
= -20 mV (V
DD
= V
A
= 12 V)
Figure 7.
Turnoff Time With
C
(GATE)
= 10 nF and V
(AC)
= -20 mV (V
DD
= 5, V
A
= 1 V)