TS3USB221E 具有单使能端和 IEC 3 级 ESD 保护的高速 USB 2.0 (480Mbps)1:2 多路复用器 – 多路信号分离器开关
- ZHCSK77E September 2009 – July 2024 TS3USB221E
  
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TS3USB221E 具有单使能端和 IEC 3 级 ESD 保护的高速 USB 2.0 (480Mbps)
1:2 多路复用器 – 多路信号分离器开关

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1 特性

V_CC 工作范围为 2.3V 至 3.6V
开关 I/O 支持高达 5.5V 的信号
1.8V 兼容控制引脚输入
OE 禁用时采用低功耗模式 (1μA)
r_ON = 6Ω（最大值）
Δr_ON = 0.2Ω（典型值）
C_IO(ON) = 7pf（最大值）
低功耗（最大值为 30μA）
经测试的 ESD 性能：
- 7000V 人体放电模型，符合 JEDEC JS-001 标准
- 1000V 充电器件模型，符合 JEDEC JS-002 标准
ESD 性能 I/O 端口接地：
- 12kV 人体放电模型 (JEDEC JS-001)
- ±7kV 接触放电 (IEC 61000-4-2)
高带宽（典型值为 1GHz）

2 应用

为 USB 1.0、1.1 和 2.0 路由信号
手机
数码相机
笔记本电脑
USB I/O 扩展
MHL 1.0

3 说明

TS3USB221E 是一款高带宽开关，专为手持和消费类应用（例如手机、数码相机和具有集线器的笔记本电脑或具有受限 USB I/O 的控制器）中的高速 USB 2.0 信号切换而设计。此开关具有较宽的带宽 (1GHz)，这一特性使得信号传递具有最少的边缘失真和相位失真。该器件将 USB 主机器件差动输出复用到一个相应的输出（共两个输出）。此开关为双向开关，输出端高速信号具有极少或零衰减。TS3USB221E 经过精心设计，可实现低位间偏移和高通道间噪声隔离，并且与高速 USB 2.0 (480Mbps) 等各种标准兼容。

TS3USB221E 在所有引脚上集成了 ESD 保护单元，采用 SON 封装 (3mm ×
3mm) 和微型 μQFN 封装 (2mm × 1.5mm)，在自然通风条件下的额定工作温度范围为 –40°C 至 85°C。

封装信息

器件型号	封装⁽¹⁾	封装尺寸⁽²⁾
TS3USB221E	DRC（VSON，10）	3mm × 3mm
TS3USB221E	RSE（UQFN，10）	2mm × 1.5mm

(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附录。

(2) 封装尺寸（长 × 宽）为标称值，并包括引脚（如适用）。

方框图

A. EN 是应用于开关的内部启用信号。

每个 FET 开关 (SW) 的简化版原理图)

4 Pin Configuration and Functions

TS3USB221E RSE
Package,10-Pin UQFN(Top View)

Figure 4-1 RSE Package,10-Pin UQFN(Top View)

TS3USB221E RSE
Package,10-Pin UQFN(Bottom View)

Figure 4-2 RSE Package,10-Pin UQFN(Bottom View)

TS3USB221E DRC
Package,10-Pin VSON(Top View)

Figure 4-3 DRC Package,10-Pin VSON(Top View)

Table 4-1 Pin Functions

PIN		TYPE⁽¹⁾	DESCRIPTION
NAME	NO.	TYPE⁽¹⁾	DESCRIPTION
1D+	1	I/O	USB port 1
1D–	2	I/O	USB port 1
2D+	3	I/O	USB port 2
2D–	4	I/O	USB port 2
GND	5	—	Ground
OE	6	I	Bus-switch enable
D–	7	I/O	Common USB port
D+	8	I/O	Common USB port
S	9	I	Select input
V_CC	10	—	Supply voltage

(1) I = input, O = output

5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

			MIN	MAX	UNIT
V_CC	Supply voltage		–0.5	4.6	V
V_IN	Control input voltage⁽²⁾⁽²⁾⁽³⁾		–0.5	7	V
V_I/O	Switch I/O voltage⁽²⁾⁽³⁾⁽⁴⁾		–0.5	7	V
I_IK	Control input clamp current	V_IN < 0		–50	mA
I_I/OK	I/O port clamp current	V_I/O < 0		–50	mA
I_I/O	ON-state switch current⁽⁵⁾			±120	mA
	Continuous current through V_CC or GND			±100	mA
θ_JA	Package thermal impedance⁽⁶⁾	DRC package		48.7	°C/W
θ_JA	Package thermal impedance⁽⁶⁾	RSE package		243	°C/W
T_stg	Storage temperature		–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltages are with respect to ground, unless otherwise specified.

(3) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.

(4) V_I and V_O are used to denote specific conditions for V_I/O.

(5) I_I and I_O are used to denote specific conditions for I_I/O.

(6) The package thermal impedance is calculated in accordance with JESD 51-7.

5.2 ESD Ratings

				VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	I/O pins to GND	±12000	V
		Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	Pins GND, OE, S and V_CC	±7000
		Contact discharge (IEC 61000-4-2)	I/O pins to GND	±7000
		Charged-device model (CDM), per JEDEC specification JESD-002⁽²⁾		±1000

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

5.3 Recommended Operating Conditions

See ⁽¹⁾.

			MIN	MAX	UNIT
V_CC	Supply voltage		2.3	3.6	V
V_IH	High-level control input voltages	V_CC = 2.3 V to 2.7 V	0.46 × V_CC		V
V_IH	High-level control input voltages	V_CC = 2.7 V to 3.6 V	0.46 × V_CC		V
V_IL	Low-level control input voltage	V_CC = 2.3 V to 2.7 V		0.25 × V_CC	V
V_IL	Low-level control input voltage	V_CC = 2.7 V to 3.6 V		0.25 × V_CC	V
V_I/O	Data input/output voltage⁽²⁾		0	5.5	V
T_A	Operating free-air temperature		–40	85	°C

(1) All unused control inputs of the device must be held at V_CC or GND to ensure proper device operation. Refer to the Implications of Slow or Floating CMOS Inputs application note.

(2) The I/O pins are 5.5V tolerant and functional for the entire range. However, for VI/O >3.6V, channel R_ON will be high. Use 3.3V power supply for best results.

5.4 Thermal Information

THERMAL METRIC⁽¹⁾		TS3USB221E		UNIT
		DRC (VSON)	RSE (UQFN)
		10 PINS	10 PINS
R_θJA	Junction-to-ambient thermal resistance	57.7	204.8	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	87.7	118.1
R_θJB	Junction-to-board thermal resistance	32.6	121.5
ψ_JT	Junction-to-top characterization parameter	8.2	13.9
ψ_JB	Junction-to-board characterization parameter	32.8	121.2
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	18.5	N/A

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application note.

5.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

PARAMETER		TEST CONDITIONS			MIN	TYP⁽²⁾	MAX	UNIT
V_IK		V_CC = 3.6 V, 2.7 V,	I_I = –18 mA		–1.8			V
I_IN	Control inputs	V_CC = 3.6 V, 2.7 V, 0 V,	V_IN = 0 V to 3.6 V				±1	μA
I_OZ⁽³⁾		V_CC = 3.6 V, 2.7 V, V_O = 0 V to 5.25 V, V_I = 0 V,	V_IN = V_CC or GND, Switch OFF				±1	μA
I_OFF		V_CC = 0 V	V_I/O = 0 V to 5.25 V				±2	μA
			V_I/O = 0 V to 3.6 V				±2
			V_I/O = 0 V to 2.7 V				±1
I_CC		V_CC = 3.6 V, 2.7 V, V_IN = V_CC or GND,	I_I/O = 0 V, Switch ON or OFF				30	μA
I_CC (low power mode)		V_CC = 3.6 V, 2.7 V, V_IN = V_CC or GND	Switch disabled ( OE in high state)				1	μA
I_CC⁽⁴⁾	Control inputs	One input at 1.8 V, Other inputs at V_CC or GND	V_CC = 3.6 V				20	μA
I_CC⁽⁴⁾	Control inputs	One input at 1.8 V, Other inputs at V_CC or GND	V_CC = 2.7 V				0.5	μA
C_in	Control inputs	V_CC = 3.3 V, 2.5 V,	V_IN = 3.3 V or 0 V			1.5	2.5	pF
C_io(OFF)		V_CC = 3.3 V, 2.5 V,	V_I/O = 3.3 V or 0 V,	Switch OFF		3.5	5	pF
C_io(ON)		V_CC = 3.3 V, 2.5 V,	V_I/O = 3.3 V or 0 V,	Switch ON		6	7.5	pF
r_ON⁽⁵⁾		V_CC = 3 V, 2.3 V	V_I = 0 V,	I_O = 30 mA		3	6	Ω
r_ON⁽⁵⁾		V_CC = 3 V, 2.3 V	V_I = 2.4 V,	I_O = –15 mA		3.4	6	Ω
Δr_ON		V_CC = 3 V, 2.3 V	V_I = 0 V,	I_O = 30 mA		0.2		Ω
Δr_ON		V_CC = 3 V, 2.3 V	V_I = 1.7,	I_O = –15 mA		0.2		Ω
r_ON(flat)		V_CC = 3 V, 2.3 V	V_I = 0 V,	I_O = 30 mA		1		Ω
r_ON(flat)		V_CC = 3 V, 2.3 V	V_I = 1.7,	I_O = –15 mA		1		Ω

(1) V_IN and I_IN refer to control inputs. V_I, V_O, I_I, and I_O refer to data pins.

(2) All typical values are at V_CC = 3.3 V (unless otherwise noted), T_A = 25°C.

(3) For I/O ports, the parameter I_OZ includes the input leakage current.

(4) This is the increase in supply current for each input that is at the specified TTL voltage level, rather than V_CC or GND.

(5) Measured by the voltage drop between the A and B terminals at the indicated current through the switch. ON-state resistance is determined by the lower of the voltages of the two (A or B) terminals.

5.6 Dynamic Electrical Characteristics, V_CC = 3.3 V ±10%

over operating range, T_A = –40°C to 85°C, V_CC = 3.3 V ±10%, GND = 0 V

PARAMETER		TEST CONDITIONS	TYP⁽¹⁾	UNIT
X_TALK	Crosstalk	R_L = 50 , f = 250 MHz	–40	dB
O_IRR	OFF isolation	R_L = 50 , f = 250 MHz	–40	dB
BW	Bandwidth (–3 dB)	R_L = 50	1	GHz

(1) For Maximum or Minimum conditions, use the appropriate value specified under Electrical Characteristics for the applicable device type.

5.7 Dynamic Electrical Characteristics, V_CC = 2.5 V ±10%

over operating range, T_A = –40°C to 85°C, V_CC = 2.5 V ±10%, GND = 0 V

PARAMETER		TEST CONDITIONS	TYP⁽¹⁾	UNIT
X_TALK	Crosstalk	R_L = 50 , f = 250 MHz	-39	dB
O_IRR	OFF isolation	R_L = 50 , f = 250 MHz	-40	dB
BW	Bandwidth (3 dB)	R_L = 50	1	GHz

(1) For Maximum or Minimum conditions, use the appropriate value specified under Electrical Characteristics for the applicable device type.

5.8 Switching Characteristics, V_CC = 3.3 V ±10%

over operating range, T_A = –40°C to 85°C, V_CC = 3.3 V ±10%, GND = 0 V

PARAMETER			TYP⁽¹⁾	MAX	UNIT
t_pd	Propagation delay⁽²⁾ ⁽³⁾		0.25		ns
t_ON	Line enable time	S to D, nD		30	ns
t_ON	Line enable time	OE to D, nD		17	ns
t_OFF	Line disable time	S to D, nD		12	ns
t_OFF	Line disable time	OE to D, nD		10	ns
t_SK(O)	Output skew between center port to any other port⁽²⁾		0.1	0.2	ns
t_SK(P)	Skew between opposite transitions of the same output (t_PHL– t_PLH)⁽²⁾		0.1	0.2	ns

(1) For Maximum or Minimum conditions, use the appropriate value specified under Electrical Characteristics for the applicable device type.

(2) Specified by design

(3) The bus switch contributes no propagation delay other than the RC delay of the on resistance of the switch and the load capacitance. The time constant for the switch alone is of the order of 0.25 ns for 10-pF load. Because this time constant is much smaller than the rise/fall times of typical driving signals, it adds very little propagation delay to the system. Propagation delay of the bus switch, when used in a system, is determined by the driving circuit on the driving side of the switch and its interactions with the load on the driven side.