Data Sheet
UCC27324-Q1 双通道 4A 峰值高速低侧电源 MOSFET 驱动器
本资源的原文使用英文撰写。 为方便起见，TI 提供了译文；由于翻译过程中可能使用了自动化工具，TI 不保证译文的准确性。 为确认准确性，请务必访问 ti.com 参考最新的英文版本（控制文档）。
1 特性
- 符合汽车应用要求
- 业界通用引脚排列
- 可在米勒平坦区提供 ±4A 的高电流驱动
- 即使在低电源电压下也能实现高效的恒流源
- 与电源电压无关的 TTL 和 CMOS 兼容输入
- 1.8nF 负载时的上升时间和下降时间典型值分别为 20ns 和 15ns
- 输入下降和上升时的典型传播延迟时间分别为 25ns 和 35ns
- 电源电压为 4V 至 15V
- 电源电流为 0.3mA
- 可以并联双输出以获得更高的驱动电流
- TJ 额定值范围为 –40°C 至 125°C
- 并联双极和 CMOS 晶体管的 TrueDrive™ 输出架构
2 应用
- 开关电源供电
- 直流/直流转换器
- 电机控制器
- 线路驱动器
- D 类开关放大器
3 说明
UCC27324-Q1 高速双路 MOSFET 驱动器可向容性负载提供大峰值电流。通过使用本身能够最大限度减少击穿电流的设计，这些驱动器可在 MOSFET 开关切换期间，在米勒平坦区域提供最需要的 4A 电流。独特的双极和 MOSFET 混合输出级并联，可在低电源电压下实现高效的拉电流和灌电流。
该器件采用标准的 SOIC-8 (D) 封装。
器件信息
| 器件型号 | 封装(1) | 封装尺寸（标称值） |
|---|---|---|
| UCC27324-Q1 | SOIC (8) | 4.90mm × 3.91mm |
(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附录。
方框图4 Pin Configuration and Functions
NC – No internal connection
Figure 4-1 D Package8-Pin SOICTop ViewTable 4-1 Pin Functions
| PIN | I/O | DESCRIPTION | |
|---|---|---|---|
| NO. | NAME | ||
| 1 | NC | — | No connection. Should be grounded. |
| 2 | INA | I | Input A. Input signal of the A driver. Has logic-compatible threshold and hysteresis. If not used, this input should be tied to either VDD or GND. It should not be left floating. |
| 3 | GND | — | Common ground. Should be connected very closely to the source of the power MOSFET that the driver is driving. |
| 4 | INB | I | Input B. Input signal of the B driver. Has logic-compatible threshold and hysteresis. If not used, this input should be tied to either VDD or GND. It should not be left floating. |
| 5 | OUTB | O | Driver output B. The output stage can provide 4-A drive current to the gate of a power MOSFET. |
| 6 | VDD | I | Supply. Supply voltage and the power input connection for this device. |
| 7 | OUTA | O | Driver output A. The output stage can provide 4-A drive current to the gate of a power MOSFET. |
| 8 | NC | — | No connection. Should be grounded. |
5 Specifications
5.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)(2)
| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| VDD | Supply voltage | –0.3 | 16 | V | |
| IO | Output current (OUTA, OUTB) | DC, IOUT_DC | 0.3 | A | |
| Pulsed (0.5 μs), IOUT_PULSED | 4.5 | ||||
| TJ | Junction operating temperature | –55 | 150 | °C | |
| Tlead | Lead temperature | 300 | °C | ||
| Tstg | Storage temperature, soldering, 10 s | –65 | 150 | °C | |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to GND. Currents are positive into and negative out of the specified terminal.
