ZHCSHD3L October   2017  – March 2025 BQ2980 , BQ2982

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
      1. 7.1.1 Device Configurability
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Overvoltage (OV) Status
      2. 7.3.2 Undervoltage (UV) Status
      3. 7.3.3 Overcurrent in Charge (OCC) Status
      4. 7.3.4 Overcurrent in Discharge (OCD) and Short Circuit in Discharge (SCD) Status
      5. 7.3.5 Overtemperature (OT) Status
      6. 7.3.6 Charge and Discharge Driver
      7. 7.3.7 CTR for FET Override and Device Shutdown
      8. 7.3.8 CTR for PTC Connection
      9. 7.3.9 ZVCHG (0V Charging)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power Modes
        1. 7.4.1.1 Power-On-Reset (POR)
        2. 7.4.1.2 NORMAL Mode
        3. 7.4.1.3 FAULT Mode
        4. 7.4.1.4 SHUTDOWN Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Test Circuits for Device Evaluation
      2. 8.1.2 Test Circuit Diagrams
      3. 8.1.3 Using CTR as FET Driver On/Off Control
    2. 8.2 Typical Applications
      1. 8.2.1 BQ298xx Configuration 1: System-Controlled Reset/Shutdown Function
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Selection of Power FET
        4. 8.2.1.4 Application Curves
      2. 8.2.2 BQ298xx Configuration 2: CTR Function Disabled
      3. 8.2.3 BQ298xx Configuration 3: PTC Thermistor Protection
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 第三方产品免责声明
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

7.1 Overview

The BQ298xx devices are high-side single-cell protectors designed to improve thermal performance by reducing power dissipation across the protection FETs. This is achieved with high-side protection with a built-in charge pump to provide higher Vgs to the FET gate voltage to reduce FET Rdson. Additionally, the device supports as low as a 1mΩ sense resistor with ±1mV accuracy, resulting in lower heat dissipation at the sense resistor without compromising current accuracy.

The BQ298xx device implements a CTR pin that allows external control to open the power FETs, as well as shut down the device for low power storage. Optionally, the CTR pin can be configured to connect to a PTC and be used for overtemperature protection.