UCC20520 是一款隔离式单输入、双通道栅极驱动器,其峰值拉电流为 4A,峰值灌电流为 6A。该器件设计用于驱动高达 5MHz 的功率 MOSFET、IGBT 和 SiC MOSFET,具有一流的传播延迟和脉宽失真度。
输入侧通过 5.7kVRMS 增强型隔离层与两个输出驱动器隔离,具有最少100V/ns的共模瞬态抗扰度 (CMTI) 。两个次级侧驱动器之间的内部功能隔离,支持的工作电压高达 1500 VDC。
该驱动器可用于具有可编程死区时间 (DT) 的半桥驱动器。禁用引脚在设为高电平时可同时关断两个输出,并在开路或接地时允许正常运行。作为一种故障安全措施,初级侧逻辑故障强制两个输出均为低电平。
此器件接受高达 25V 的 VDD 电源电压。3V 到 18V 的宽输入电压 VCCI 范围使得该驱动器适用于与模拟和数字控制器连接。所有电源电压引脚都具有欠压锁定 (UVLO) 保护功能。
凭借所有这些高级特性,UCC20520 能够在各种各样的电源应用中实现高效率、高电源密度和稳健性。
零件编号 | 封装(1) | 封装尺寸(标称值) |
---|---|---|
UCC20520 | DW SOIC (16) | 10.30mm × 7.50mm |
Changes from Revision * (November 2016) to Revision A (January 2022)
PIN | TYPE1 | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
DISABLE | 5 | I | Disables both driver outputs if asserted high, enables if set low or left open. This pin is pulled low internally if left open. It is recommended to tie this pin to ground if not used to achieve better noise immunity. |
DT | 6 | I | Programmable dead time function. Tying DT to VCCI disables the DT function with dead time ≅ 0 ns. Leaving DT open sets the dead time to <15 ns. Placing a 500-Ω to 500-kΩ resistor (RDT) between DT and GND adjusts dead time according to: DT (in ns) = 10 × RDT (in kΩ). It is recommended to parallel a ceramic capacitor, ≥2.2-nF, with RDT to achieve better noise immunity. |
GND | 4 | P | Primary-side ground reference. All signals in the primary side are referenced to this ground. |
NC | 2 | – | No connection. |
NC | 7 | – | No connection. |
NC | 12 | – | No connection. |
NC | 13 | – | No connection. |
OUTA | 15 | O | Output of driver A. Connect to the gate of the A channel FET or IGBT. Output A is in phase with PWM input with a propagation delay |
OUTB | 10 | O | Output of driver B. Connect to the gate of the B channel FET or IGBT. Output B is always complementary to output A with a programmed dead time. |
PWM | 1 | I | PWM input has a TTL/CMOS compatible input threshold. This pin is pulled low internally if left open. |
VCCI | 3 | P | Primary-side supply voltage. Locally decoupled to GND using a low ESR/ESL capacitor located as close to the device as possible. |
VCCI | 8 | P | Primary-side supply voltage. This pin is internally shorted to pin 3. |
VDDA | 16 | P | Secondary-side power for driver A. Locally decoupled to VSSA using a low ESR/ESL capacitor located as close to the device as possible. |
VDDB | 11 | P | Secondary-side power for driver B. Locally decoupled to VSSB using a low ESR/ESL capacitor located as close to the device as possible. |
VSSA | 14 | P | Ground for secondary-side driver A. Ground reference for secondary side A channel. |
VSSB | 9 | P | Ground for secondary-side driver B. Ground reference for secondary side B channel. |