ZHCSEZ1F
April 2016 – June 2024
THS6212
PRODUCTION DATA
1
1
特性
2
应用
3
说明
4
Pin Configuration and Functions
5
Specifications
5.1
Absolute Maximum Ratings
5.2
ESD Ratings
5.3
Recommended Operating Conditions
5.4
Thermal Information
5.5
Electrical Characteristics VS = 12 V
5.6
Electrical Characteristics VS = 28 V
5.7
Timing Requirements
5.8
Typical Characteristics: VS = 12 V
5.9
Typical Characteristics: VS = 28 V
6
Detailed Description
6.1
Overview
6.2
Functional Block Diagram
6.3
Feature Description
6.3.1
Output Voltage and Current Drive
6.3.2
Driving Capacitive Loads
6.3.3
Distortion Performance
6.3.4
Differential Noise Performance
6.3.5
DC Accuracy and Offset Control
6.4
Device Functional Modes
7
Application and Implementation
7.1
Application Information
7.2
Typical Applications
7.2.1
Wideband Current-Feedback Operation
7.2.1.1
Design Requirements
7.2.1.2
Detailed Design Procedure
7.2.1.3
Application Curves
7.2.2
Dual-Supply Downstream Driver
7.2.2.1
Design Requirements
7.2.2.2
Detailed Design Procedure
7.2.2.2.1
Line Driver Headroom Requirements
7.2.2.2.2
Computing Total Driver Power for Line-Driving Applications
7.3
Best Design Practices
7.4
Power Supply Recommendations
7.5
Layout
7.5.1
Layout Guidelines
7.5.2
Layout Example
8
Device and Documentation Support
8.1
Documentation Support
8.1.1
Related Documentation
8.2
接收文档更新通知
8.3
支持资源
8.4
Trademarks
8.5
静电放电警告
8.6
术语表
9
Revision History
10
Mechanical, Packaging, and Orderable Information
1
特性
低功耗:
满偏置模式:
23mA
中偏置模式:
17.5mA
低偏置模式:
11.9mA
低功耗关断模式
IADJ 引脚,用于调节偏置电流
低噪声:
电压噪声:
2.5nV/√Hz
反相电流噪声:
18pA/√Hz
同相电流噪声:
1.4pA/√Hz
低失真:
–86dBc
HD2(1MHz,100Ω
差分负载)
–101dBc
HD3(1MHz,100Ω 差分负载)
高输出电流:>
665mA
(25Ω 负载)
宽输出摆幅:
49V
PP
(
28V
,100Ω 差分负载)
高带宽:
205MHz
(G
DIFF
= 10V/V)
PSRR:在 1MHz 频率下提供
>55dB
的良好隔离
宽电源电压范围:
10V 至 28V
过热保护:
175°C
(典型值)
具有集成共模缓冲器的替代器件:
THS6222