SPVA029 October   2025 TPS7H4011-SEP

 

  1.   1
  2.   TPS7H4011-SEP Single-Event Effects (SEE)
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 LETEFF and Range Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

5 LETEFF and Range Calculation

TPS7H4011-SEP Generalized Cross-Section of the LBC7 Technology BEOL Stack on the TPS7H4011-SEP (Left) and SEUSS 2020 Application Used to Determine Key Ion Parameters (Right)Figure 5-1 Generalized Cross-Section of the LBC7 Technology BEOL Stack on the TPS7H4011-SEP (Left) and SEUSS 2020 Application Used to Determine Key Ion Parameters (Right)

The TPS7H4011-SEP is fabricated in the TI Linear BiCMOS 250-nm process with a back-end-of-line (BEOL) stack consisting of four levels of standard thickness aluminum and Damascene copper. The total stack height from the surface of the passivation to the silicon surface is 13.5 μm based on nominal layer thickness as shown in Figure 5-1. Accounting for energy loss through the degrader, copper foil, beam port window, air gap, and the BEOL stack of the TPS7H4011-SEP, the effective LET (LETEFF) at the surface of the silicon substrate and the depth was determined with:

  • SEUSS 2024 Software (provided by the Texas A&M Cyclotron Institute and based on the latest SRIM-2013 [7] models).

  • MSU Stack-Up Calculator (provided by MSU FRIB based on the latest SRIM-2013 [7] models).

The results are shown in Ion LETEFF and Range in Silicon.

Table 5-1 Ion LETEFF and Range in Silicon

Facility

Ion TypeBeam Energy (MeV/nucleon)Degrader Steps (#)Degrader Angle

Copper Foil Width (µm)

Beam Port Window

Air Gap (mm)

Angle of Incidence

LETEFF (MeV·cm2/ mg)Range in Silicon (µm)

TAMU

109Ag1500

-

1-mil Aramica

40

0

48.2

91.6

KSEE

109Ag

19.5

-

-

5

3-mil PEN

60

0

48

89.3