SLVK225A August 2025 – February 2026 TPS7H5020-SEP
- 1
- 2
- Trademarks
- 1 Introduction
- 2 Single-Event Effects (SEE)
- 3 Device and Test Board Information
- 4 Irradiation Facility and Setup
- 5 LETEFF and Range Calculation
- 6 Test Setup and Procedures
- 7 Destructive Single-Event Effects (DSEE)
- 8 Single-Event Transients (SET)
- 9 Event Rate Calculations
- 10Summary
- A References
- B Revision History
7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
During the SEB/SEGR characterization, the device was tested at room temperature of approximately 25°C. The device was tested under both the enabled and disabled mode. For the SEB-OFF mode the device was disabled using the EN-pin by forcing 0V (using CH # 1 of a E36311A Keysight PS). During the SEB/SEGR testing with the device enabled/disabled, not a single input current event was observed.
The species used for the SEB testing was 109Ag (TAMU) at 15MeV/nucleon and 109Ag (KSEE) at 19.5 MeV/nucleon. For both ions an angle of 0° was used to achieve a LETEFF of ≈ 48MeV·cm2/mg (for more details refer to Table 5-1). The kinetic energy in the vacuum for 109Ag (TAMU) is 1.635GeV and 109Ag (KSEE) is 2.125GeV. Flux of ≈ 8.83 × 104 to 1.26 × 105 ions/(cm2×s) and a fluence of ≈107 ions/cm2 per run was used. Run duration to achieve this fluence was ≈2 minutes. The 8 devices (same as used in SEL testing) were powered up and exposed to the heavy-ions using the maximum recommended bias conditions. No SEB/SEGR current events were observed during the 16 runs, indicating that the TPS7H502x-SEP is SEB/SEGR-free up to LETEFF = 48MeV·cm2/mg and across the full electrical specifications. Table 8-4 shows the SEB/SEGR test conditions and results.
| RUN # | UNIT # | Facility | Device Type | Mode | ION | LETEFF (MeV·cm2/mg) | FLUX (ions/(cm2×s)) | FLUENCE (ions/cm2) | ENABLED STATUS | VIN (V) | PVIN (V) | VLDO (V) | SEB EVENT? |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
7 | 1 | TAMU | TPS7H5020-SEP | Silicon | 109Ag | 47.7 | 9.67 x 104 | 9.99 x 106 | EN | 14 | 14 | 5.5 | No |
8 | 1 | TAMU | TPS7H5020-SEP | Silicon | 109Ag | 47.7 | 9.77 x 104 | 9.99 x 106 | DIS | 14 | 14 | 5.5 | No |
9 | 2 | TAMU | TPS7H5020-SEP | Silicon | 109Ag | 47.7 | 1.00 x 105 | 1.00 x 107 | EN | 14 | 14 | 5.5 | No |
10 | 2 | TAMU | TPS7H5020-SEP | Silicon | 109Ag | 47.7 | 1.12 x 105 | 1.00 x 107 | DIS | 14 | 14 | 5.5 | No |
11 | 3 | TAMU | TPS7H5020-SEP | GaN | 109Ag | 47.7 | 1.13 x 105 | 1.00 x 107 | EN | 14 | 5.5 | 5.5 | No |
12 | 3 | TAMU | TPS7H5020-SEP | GaN | 109Ag | 47.7 | 1.18 x 105 | 1.00 x 107 | DIS | 14 | 5.5 | 5.5 | No |
13 | 4 | TAMU | TPS7H5020-SEP | GaN | 109Ag | 47.7 | 1.18 x 105 | 1.00 x 107 | EN | 14 | 5.5 | 5.5 | No |
14 | 4 | TAMU | TPS7H5020-SEP | GaN | 109Ag | 47.7 | 1.26 x 105 | 1.00 x 107 | DIS | 14 | 5.5 | 5.5 | No |
15 | 5 | KSEE | TPS7H5020-SEP | Silicon | 109Ag | 49.1 | 1.02 x 105 | 1.00 x 107 | EN | 14 | 14 | 5.5 | No |
16 | 5 | KSEE | TPS7H5020-SEP | Silicon | 109Ag | 49.1 | 9.54 x 104 | 1.00 x 107 | DIS | 14 | 14 | 5.5 | No |
17 | 6 | KSEE | TPS7H5020-SEP | GaN | 109Ag | 49.1 | 1.15 x 105 | 1.00 x 107 | EN | 14 | 5.5 | 5.5 | No |
18 | 6 | KSEE | TPS7H5020-SEP | GaN | 109Ag | 49.1 | 1.18 x 105 | 1.00 x 107 | DIS | 14 | 5.5 | 5.5 | No |
27 | 7 | KSEE | TPS7H5021-SEP | Silicon | 109Ag | 49.1 | 1.05 x 105 | 1.00 x 107 | EN | 14 | 14 | 5.5 | No |
28 | 7 | KSEE | TPS7H5021-SEP | Silicon | 109Ag | 49.1 | 8.99 x 104 | 1.00 x 107 | DIS | 14 | 14 | 5.5 | No |
29 | 8 | KSEE | TPS7H5021-SEP | GaN | 109Ag | 49.1 | 9.44 x 104 | 1.00 x 107 | EN | 14 | 5.5 | 5.5 | No |
30 | 8 | KSEE | TPS7H5021-SEP | GaN | 109Ag | 49.1 | 8.83 x 104 | 1.00 x 107 | DIS | 14 | 5.5 | 5.5 | No |
Using the MFTF method described in Single-Event Effects (SEE) Confidence Interval Calculations application report, the upper-bound cross-section (using a 95% confidence level) is calculated as:
σSEB ≤ 2.31x 10-8 cm2/device for LETEFF = 75 MeV·cm2/mg and T = 25°C.
Figure 7-3 SEB On Run #7 TPS7H5020-SEP Silicon Mode
Figure 7-4 SEB Off Run #8 TPS7H5020-SEP Silicon Mode
Figure 7-5 SEB On Run #15 TPS7H5020-SEP GaN Mode
Figure 7-6 SEB Off Run #16 TPS7H5020-SEP GaN Mode