SLUUCO5A december   2022  – august 2023 BQ34Z100-R2

 

  1.   1
  2.   Read This First
    1.     About This Manual
    2.     Notational Conventions
    3.     Glossary
    4.     Trademarks
  3. 1 Introduction
  4. 2 Data Commands
    1. 2.1 Standard Data Commands
      1. 2.1.1  Control(): 0x00/0x01
        1. 2.1.1.1  CONTROL_STATUS: 0x0000
        2. 2.1.1.2  DEVICE TYPE: 0x0001
        3. 2.1.1.3  FW_VERSION: 0x0002
        4. 2.1.1.4  HW_VERSION: 0x0003
        5. 2.1.1.5  RESET_DATA: 0x0005
        6. 2.1.1.6  PREV_MACWRITE: 0x0007
        7. 2.1.1.7  CHEM ID: 0x0008
        8. 2.1.1.8  BOARD_OFFSET: 0x0009
        9. 2.1.1.9  CC_OFFSET: 0x000A
        10. 2.1.1.10 CC_OFFSET_SAVE: 0x000B
        11. 2.1.1.11 DF_VERSION: 0x000C
        12. 2.1.1.12 SET_FULLSLEEP: 0x0010
        13. 2.1.1.13 STATIC_CHEM_DF_CHKSUM: 0x0017
        14. 2.1.1.14 SEALED: 0x0020
        15. 2.1.1.15 IT ENABLE: 0x0021
        16. 2.1.1.16 CAL_ENABLE: 0x002D
        17. 2.1.1.17 RESET: 0x0041
        18. 2.1.1.18 EXIT_CAL: 0x0080
        19. 2.1.1.19 ENTER_CAL: 0x0081
        20. 2.1.1.20 OFFSET_CAL: 0x0082
      2. 2.1.2  StateOfCharge(): 0x02
      3. 2.1.3  MaxError(): 0x03
      4. 2.1.4  RemainingCapacity(): 0x04/0x05
      5. 2.1.5  FullChargeCapacity(): 0x06/07
      6. 2.1.6  Voltage(): 0x08/0x09
      7. 2.1.7  AverageCurrent(): 0x0A/0x0B
      8. 2.1.8  Temperature(): 0x0C/0x0D
      9. 2.1.9  Flags(): 0x0E/0x0F
      10. 2.1.10 FlagsB(): 0x12/0x13
      11. 2.1.11 Current(): 0x10/0x11
    2. 2.2 Extended Data Commands
      1. 2.2.1  AverageTimeToEmpty(): 0x18/0x19
      2. 2.2.2  AverageTimeToFull(): 0x1A/0x1B
      3. 2.2.3  PassedCharge(): 0x1C/0x1D
      4. 2.2.4  DOD0Time(): 0x1E/0x1F
      5. 2.2.5  VoltScale(): 0x20
      6. 2.2.6  CurrScale(): 0x21
      7. 2.2.7  EnegyScale(): 0x22
      8. 2.2.8  AvailableEnergy(): 0x24/0x25
      9. 2.2.9  AveragePower(): 0x26/0x27
      10. 2.2.10 SerialNumber(): 0x28/0x29
      11. 2.2.11 InternalTemperature(): 0x2A/0x2B
      12. 2.2.12 CycleCount(): 0x2C/0x2D
      13. 2.2.13 StateOfHealth(): 0x2E/0x2F
      14. 2.2.14 ChargeVoltage(): 0x30/0x31
      15. 2.2.15 ChargeCurrent(): 0x32/0x33
      16. 2.2.16 PackConfiguration(): 0x3A/0x3B
      17. 2.2.17 DesignCapacity(): 0x3C/0x3D
      18. 2.2.18 DataFlashClass(): 0x3E
      19. 2.2.19 DataFlashBlock(): 0x3F
      20. 2.2.20 AuthenticateData/BlockData(): 0x40…0x53
      21. 2.2.21 AuthenticateChecksum/BlockData(): 0x54
      22. 2.2.22 BlockData(): 0x55…0x5F
      23. 2.2.23 BlockDataChecksum(): 0x60
      24. 2.2.24 BlockDataControl(): 0x61
      25. 2.2.25 GridNumber(): 0x62
      26. 2.2.26 LearnedStatus(): 0x63
      27. 2.2.27 Dod@Eoc(): 0x64/0x65
      28. 2.2.28 QStart(): 0x66/0x67
      29. 2.2.29 TrueRC(): 0x68/0x69
      30. 2.2.30 TrueFCC(): 0x6A/0x6B
      31. 2.2.31 StateTime(): 0x6C/0x6D
      32. 2.2.32 QmaxPassedQ(): 0x6E/0x6F
      33. 2.2.33 DOD0(): 0x70/0x71
      34. 2.2.34 QmaxDod0(): 0x72/0x73
      35. 2.2.35 QmaxTime(): 0x74/0x75
      36. 2.2.36 Data Flash Interface
        1. 2.2.36.1 Accessing Data Flash
        2. 2.2.36.2 Manufacturer Information Block
        3. 2.2.36.3 Access Modes
        4. 2.2.36.4 Sealing/Unsealing Data Flash Access
  5. 3 Fuel Gauging
    1. 3.1  Overview
    2. 3.2  Impedance Track Variables
      1. 3.2.1  Load Mode
      2. 3.2.2  Load Select
      3. 3.2.3  Reserve Cap-mAh
      4. 3.2.4  Reserve Cap-mWh/cWh
      5. 3.2.5  Energy Scale
      6. 3.2.6  Dsg Current Threshold
      7. 3.2.7  Chg Current Threshold
      8. 3.2.8  Quit Current, Dsg Relax Time, Chg Relax Time, and Quit Relax Time
      9. 3.2.9  Qmax
      10. 3.2.10 Update Status
      11. 3.2.11 Avg I Last Run
      12. 3.2.12 Avg P Last Run
      13. 3.2.13 Cell Delta Voltage
      14. 3.2.14 Ra Tables
      15. 3.2.15 StateOfCharge() Smoothing
      16. 3.2.16 Charge Efficiency
      17. 3.2.17 Lifetime Data Logging
    3. 3.3  Device Configuration
      1. 3.3.1 Pack Configuration Register
      2. 3.3.2 Pack Configuration B Register
      3. 3.3.3 Pack Configuration C Register
    4. 3.4  Voltage Measurement and Calibration
      1. 3.4.1 1S Example
      2. 3.4.2 7S Example
      3. 3.4.3 Autocalibration
    5. 3.5  Temperature Measurement
    6. 3.6  Overtemperature Indication
      1. 3.6.1 Overtemperature: Charge
      2. 3.6.2 Overtemperature: Discharge
    7. 3.7  Charging and Charge Termination Indication
    8. 3.8  The Scale Factors
    9. 3.9  LED Display
    10. 3.10 Alert Signal
    11. 3.11 Fast Resistance Scaling
      1. 3.11.1 Calculation of Resistance Scale
      2. 3.11.2 Negative Resistance Scale
      3. 3.11.3 Reset of Resistance Scale
      4. 3.11.4 Fast Resistance Scaling Configuration
  6. 4 Communications
    1. 4.1 Authentication
    2. 4.2 Key Programming
    3. 4.3 Executing an Authentication Query
    4. 4.4 HDQ Single-Pin Serial Interface
    5. 4.5 I2C Interface
    6. 4.6 Switching Between I2C and HDQ Modes
      1. 4.6.1 Converting to HDQ Mode
      2. 4.6.2 Converting to I2C Mode
  7. 5 Device Functional Modes
    1. 5.1 NORMAL Mode
    2. 5.2 SLEEP Mode
    3. 5.3 FULL SLEEP Mode
  8. 6 Power Control
    1. 6.1 Reset Functions
    2. 6.2 Wake-Up Comparator
    3. 6.3 Flash Updates
  9. 7 Data Flash Summary
  10. 8 Gas Gauge Timing Considerations
    1. 8.1 Gauging Effects on I2C Transactions
    2. 8.2 HDQ Bus Effects on Gauging
    3. 8.3 Gauging Effects on HDQ Transactions
    4. 8.4 Manufacturer Timing Notes
  11. 9 HDQ Communication Basics
    1. 9.1 Basic HDQ Protocol
    2. 9.2 Break
    3. 9.3 Basic Timing
    4. 9.4 Reading 16-Bit Words
    5. 9.5 Host Processor Interrupts Using Discrete I/O Port for HDQ
    6. 9.6 Using UART Interface to HDQ
  12. 10Procedures to Seal and Unseal the Gauge
    1. 10.1 Unseal the Gauge to UNSEALED Mode
    2. 10.2 Unseal the Gauge to FULL ACCESS Mode
    3. 10.3 Seal the Gauge
  13. 11Impedance Track Gauge Configuration
    1. 11.1 Introduction
    2. 11.2 Determining ChemID
    3. 11.3 Learning Cycle
    4. 11.4 Common Problems Seen During the Learning Cycle
    5. 11.5 Test Gauge and Optimize
    6. 11.6 Finalize Golden File
    7. 11.7 Program and Test the PCB
  14. 12Revision History

2.2.36.1 Accessing Data Flash

The BQ34Z100-R2 data flash is a non-volatile memory that contains BQ34Z100-R2 initialization, default, cell status, calibration, configuration, and user information. The data flash can be accessed in several different ways, depending on in what mode the BQ34Z100-R2 is operating and what data is being accessed.

Commonly accessed data flash memory locations, frequently read by a host, are conveniently accessed through specific instructions described in Chapter 2. These commands are available when the BQ34Z100-R2 is either in UNSEALED or SEALED modes.

Most data flash locations, however, can only be accessible in UNSEALED mode by use of the BQ34Z100-R2 evaluation software or by data flash block transfers. These locations should be optimized and/or fixed during the development and manufacture processes. They become part of a Golden Image File and can then be written to multiple battery packs. Once established, the values generally remain unchanged during end-equipment operation.

To access data flash locations individually, the block containing the desired data flash location(s) must be transferred to the command register locations where they can be read to the host or changed directly. This is accomplished by sending the set-up command BlockDataControl() (code 0x61) with data 0x00. Up to 32 bytes of data can be read directly from the BlockData() command locations 0x40…0x5F, externally altered, then re-written to the BlockData() command space. Alternatively, specific locations can be read, altered, and re-written if their corresponding offsets are used to index into the BlockData() command space. Finally, the data residing in the command space is transferred to data flash, once the correct checksum for the whole block is written to BlockDataChecksum() (command number 0x60).

Occasionally, a data flash class will be larger than the 32-byte block size. In this case, the DataFlashBlock() command is used to designate which 32-byte block in which the desired locations reside. The correct command address is then given by 0x40 + offset modulo 32. For example, to access Terminate Voltage in the Gas Gauging class, DataFlashClass() is issued 80 (0x50) to set the class. Because the offset is 48, it must reside in the second 32-byte block. Hence, DataFlashBlock() is issued 0x01 to set the block offset, and the offset used to index into the BlockData() memory area is 0x40 + 48 modulo 32 = 0x40 + 16 = 0x40 + 0x10 = 0x50; for example, to modify [VOLTSEL] in Pack Configuration from 0 to 1 to enable the external voltage measurement option.

Note:

The subclass ID and Offset values are in decimal format in the documentation and in BQSTUDIO. The example below shows these values converted to hexadecimal. For example, the Pack Configuration subclass is d64 = 0x40.

  1. Unseal the device using the Control() (0x00/0x01) command if the device is sealed.
    1. Write the first 2 bytes of the UNSEAL key using the Control(0x0414) command.

      (wr 0x00 0x14 0x04)

    2. Write the second 2 bytes of the UNSEAL key using the Control(0x3672) command.

      (wr 0x00 0x72 0x36)

  2. Write 0x00 using BlockDataControl() command (0x61) to enable block data flash control.

    (wr 0x61 0x00)

  3. Write 0x40 (Pack Configuration Subclass) using the DataFlashClass() command (0x3E) to access the Registers subclass.

    (wr 0x3E 0x40)

  4. Write the block offset location using DataFlashBlock() command (0x3F). To access data located at offset 0 to 31, use offset = 0x00. To access data located at offset 32 to 63, use offset = 0x01, and so on, as necessary.

    For example, Pack Configuration (offset = 0) is in the first block so use (wr 0x3F 0x00).

  5. To read the data of a specific offset, use address 0x40 + mod(offset, 32). For example, Pack Configuration (offset = 0) is located at 0x40 and 0x41; however, [VOLTSEL] is in the MSB so only 0x40 needs to be read. Read 1 byte starting at the 0x40 address.

    (rd 0x40 old_Pack_Configuration_MSB)

    In this example, assume [VOLTSEL] = 0 (default).

  6. To read the 1-byte checksum, use the BlockDataChecksum() command (0x60).

    (rd 0x60 OLD_checksum)

  7. In this example, set [VOLTSEL] by setting Bit 3 of old_Pack_Configuration_MSB to create new_Pack_Configuration_MSB.
  8. The new value for new_Pack_Configuration_MSB can be written by writing to the specific offset location.

    For example, to write 1-byte new_Pack_Configuration_MSB to Pack Configuration (offset=0) located at 0x40, use command (wr 0x4B new_Pack_Configuration_MSB).

  9. The data is actually transferred to the data flash when the correct checksum for the whole block (0x40 to 0x5F) is written to BlockDataChecksum() (0x60).

    (wr 0x60 NEW_checksum)

    The checksum is (255-x) where x is the 8-bit summation of the BlockData() (0x40 to 0x5F) on a byte-by-byte basis.

    A quick way to calculate the new checksum is to make use of the old checksum:

    1. temp = mod (255 – OLD_checksum – old_Pack_Configuration_MSB), 256)
    2. NEW_checksum = 255 – mod (temp + new_Pack_Configuration_MSB, 256)

  10. Reset the gauge to ensure the new data flash parameter goes into effect by using Control(0x0041).

    (wr 0x00 0x41 0x00)

    If previously sealed, the gauge will automatically become sealed again after RESET.

  11. If not previously sealed, then seal the gauge by using Control(0x0020).

    (wr 0x00 0x20 0x00)

Reading and writing subclass data are block operations 32 bytes in length. Data can be written in shorter block sizes, however. Blocks can be shorter than 32 bytes in length. Writing these blocks back to data flash will not overwrite data that extend beyond the actual block length.

Note:

None of the data written to memory is bounded by the BQ34Z100-R2: The values are not rejected by the gas gauge. Writing an incorrect value may result in hardware failure due to firmware program interpretation of the invalid data. The data written is persistent, so a power-on reset resolves the fault.