The THVD9491-SEP samples were irradiated at a high dose rate of 168.26rad(Si)/s up to 30krad(Si) (115.74mrad(Si)/s effective does rate with 72 hour anneal) and then put through full electrical parametric testing on the production Automated Test Equipment (ATE). Additionally, other THVD9491-SEP samples were irradiated at a low dose rate of 9.56E-03rad(Si)/s up to 30krad(Si) and then put through full electrical parametric testing on the production Automated Test Equipment (ATE). Both sample sets were functional and passed all electrical parametric tests with readings within data sheet electrical specification limits.

The THVD9491-SEP LBC9 process technology contains Bipolar and CMOS components. In addition to an HDR TID, an ELDRS characterization was performed on technology process node (LBC9) that is used by this product. Results showed that worst case values post-irradiation were still within pre-radiation specification limits for both HDR and LDR, hence no ELDRS effects were exhibited. Thus, HDR will be performed on each wafer lot for future RLAT testing.