SFFSAB6 March   2025 TPSI3050M

 

  1.   1
  2.   Trademarks
  3. 1Overview
  4. 2Functional Safety Failure In Time (FIT) Rates
  5. 3Failure Mode Distribution (FMD)
  6. 4Pin Failure Mode Analysis (Pin FMA)
  7. 5Revision History

Pin Failure Mode Analysis (Pin FMA)

This section provides a failure mode analysis (FMA) for the pins of the TPSI3050M. The failure modes covered in this document include the typical pin-by-pin failure scenarios for three-wire mode and two-wire mode:

Table 4-2 through Table 4-9 also indicate how these pin conditions can affect the device as per the failure effects classification in Table 4-2.

Table 4-1 TI Classification of Failure Effects
Class Failure Effects
A Potential device damage that affects functionality.
B No device damage, but loss of functionality.
C No device damage, but performance degradation.
D No device damage, no impact to functionality or performance.

Figure 4-1 shows the TPSI3050M pin diagram. For a detailed description of the device pins please refer to the Pin Configuration and Functions section in the TPSI3050M data sheet.

TPSI3050M Pin Diagram Figure 4-1 Pin Diagram

The TPSI3050M is normally operated in one of two modes of operation for a given application: three-wire mode or two-wire mode. The pin FMA was performed individually for each of these modes of operation in the following sections.

Three-Wire Mode

Following are the assumptions of use and the device configuration assumed for the pin FMA in this section:

  • Device configured and operating in three-wire mode
  • Device in normal operation prior to any open or short condition being applied to the respective pin
  • EN set to a static logic low or high (VDRV asserted low or high respectively)
  • Opens or shorts occur relative to primary and secondary sides of the device and is a static event
Table 4-2 Three-Wire Mode: Pin FMA for Device Pins Short-Circuited to VSSP or VSSS
Pin Name Pin No. Ground Description of Potential Failure Effects Failure Effect Class
EN 1 VSSP VDRV asserts low. B
PXFR 2 VSSP Subsequent power cycles result in RPXFR selection to 7.32kΩ, which can result in longer start-up and recovery times if a different RPXFR selection from 7.32kΩ is used in the application. C
VDDP 3 VSSP No power transfer. VDDH and VDDM rails collapse. VDRV asserts low with active clamp enabled. If EN static is high, additional leakage current into the EN pin is observed on the order of 25mA. B
VDRV 8 VSSS If VDRV is high, VDDH and VDDM rails collapse. VDRV asserts low with an active clamp enabled. If VDRV is low, no effect. B
VDDH 7 VSSS VDDH and VDDM rails collapse. VDRV asserts low with an active clamp enabled. B
VDDM 6 VSSS VDDH and VDDM rails collapse. VDRV asserts low with an active clamp enabled. B
Table 4-3 Three-Wire Mode: Pin FMA for Device Pins Open-Circuited
Pin Name Pin No. Description of Potential Failure Effects Failure Effect Class
EN 1 VDRV asserts low. The EN pin has an internal resistive pulldown to VSSP. B
PXFR 2 Subsequent power cycles result in RPXFR selection to 7.32kΩ, which can result in longer start-up and recovery times if a different RPXFR selection from 7.32kΩ is used in the application. C
VDDP 3 No power transfer. VDDH and VDDM rails collapse. VDRV asserts low with an active clamp enabled. B
VSSP 4 No power transfer. VDDH and VDDM rails collapse. VDRV asserts low with an active clamp enabled. B
VDRV 8 No drive to the external switch. The external switch gate control can float dependent upon application circuitry. B
VDDH 7 VDDH can collapse under loading or switching events. B
VDDM 6 VDDH and VDDM can collapse under loading or switching events. B
VSSS 5 Normal power transfer. VDDH and VDDM rails remain charged. VDRV follows the state of EN logic level. Since VSSS is a floating ground, VSSS cannot drive the external switch. B
Table 4-4 Three-Wire Mode: Pin FMA for Device Pins Short-Circuited to Adjacent Pin
Pin Name Pin No. Shorted to Description of Potential Failure Effects Failure Effect Class
VDDH 7 VDDM VDDH and VDDM rails collapse. VDRV asserts low with an active clamp enabled. B
VDRV 8 VDDH If VDRV is low, VDDH and VDDM rails collapse. VDRV remains low with an active clamp enabled. If VDRV is high, no effect. B
EN 1 PXFR Subsequent power cycles result in RPXFR selection to 7.32kΩ, which can result in longer start-up and recovery times if a different RPXFR selection from 7.32kΩ is used in the application. C
Table 4-5 Three-Wire Mode: Pin FMA for Device Pins Short-Circuited to VDDP
Pin Name Pin No. Description of Potential Failure Effects Failure Effect Class
EN 1 VDRV asserts high. B
PXFR 2 Subsequent power cycles result in RPXFR selection to 7.32kΩ, which can result in longer start-up and recovery times if a different RPXFR selection from 7.32kΩ is used in the application. C

Two-Wire Mode

Following are the assumptions of use and the device configuration assumed for the pin FMA in this section:

  • Device configured and operating in two-wire mode
  • Device in normal operation prior to any open or short condition being applied to the respective pin
  • EN set to a static high (VDRV asserted high)
  • Opens or shorts occur relative to primary and secondary sides of the device and is a static event
Table 4-6 Two-Wire Mode: Pin FMA for Device Pins Short-Circuited to VSSP or VSSS
Pin Name Pin No. Ground Description of Potential Failure Effects Failure Effect Class
EN 1 VSSP No power transfer. VDDH and VDDM rails collapse. VDRV asserts low with an active clamp enabled. B
PXFR 2 VSSP Subsequent power cycles result in RPXFR selection to 7.32kΩ, which can result in longer start-up and recovery times if a different RPXFR selection from 7.32kΩ is used in the application. C
VDDP 3 VSSP No power transfer. VDDH and VDDM rails collapse. VDRV asserts low with an active clamp enabled. Additional leakage current into the EN pin is observed on the order of 25mA. B
VDRV 8 VSSS VDDH and VDDM rails collapse. VDRV asserts low with an active clamp enabled. B
VDDH 7 VSSS VDDH and VDDM rails collapse. VDRV asserts low with an active clamp enabled. B
VDDM 6 VSSS VDDH and VDDM rails collapse. VDRV asserts low with an active clamp enabled. B
Table 4-7 Two-Wire Mode: Pin FMA for Device Pins Open-Circuited
Pin Name Pin No. Description of Potential Failure Effects Failure Effect Class
EN 1 No power transfer. VDDH and VDDM rails collapse. VDRV asserts low with an active clamp enabled. The EN pin has an internal resistive pulldown to VSSP. B
PXFR 2 Subsequent power cycles result in RPXFR selection to 7.32kΩ, which can result in longer start-up and recovery times if a different RPXFR selection from 7.32kΩ is used in the application. C
VDDP 3 No power transfer. VDDH and VDDM rails collapse. VDRV asserts low with an active clamp enabled. B
VSSP 4 No power transfer. VDDH and VDDM rails collapse. VDRV asserts low with an active clamp enabled. B
VDRV 8 No drive to the external switch. The external switch gate control can float dependent upon application circuitry. B
VDDH 7 VDDH can collapse under loading or switching events. B
VDDM 6 VDDH and VDDM can collapse under loading or switching events. B
VSSS 5 Normal power transfer. VDDH and VDDM rails remain charged. VDRV follows the state of EN logic level. Since VSSS is a floating ground, VSSS cannot drive the external switch. B
Table 4-8 Two-Wire Mode: Pin FMA for Device Pins Short-Circuited to Adjacent Pin
Pin Name Pin No. Shorted to Description of Potential Failure Effects Failure Effect Class
VDDH 7 VDDM VDDH and VDDM rails collapse. VDRV asserts low with an active clamp enabled. B
VDRV 8 VDDH VDRV remains high. B
EN 1 PXFR Subsequent power cycles result in RPXFR selection to 7.32kΩ, which can result in longer start-up and recovery times if a different RPXFR selection from 7.32kΩ is used in the application. C
Table 4-9 Two-Wire Mode: Pin FMA for Device Pins Short-Circuited to VDDP
Pin Name Pin No. Description of Potential Failure Effects Failure Effect Class
EN 1 If EN voltage exceeds the absolute maximum of VDDP, potential damage of device can occur. A
PXFR 2 Subsequent power cycles result in RPXFR selection to 7.32kΩ, which can result in longer start-up and recovery times if a different RPXFR selection from 7.32kΩ is used in the application. C