SBAK016 July   2022 ADS1278-SP

 

  1. 1Trademarks
  2. 2Texas Instruments MLS Product Qualification and Reliability Report
  3. 3Texas Instruments MLS Production Flow
  4. 4Qualification by Similarity (Qualification Family)

Qualification by Similarity (Qualification Family)

A new device can be qualified either by performing full-scale quality and reliability test on the actual device or using previously qualified devices through qualification by similarity (QBS) rules. By establishing similarity between the new device and those qualified previously, repetitive tests are eliminated, allowing for timely production release. When adopting the QBS methodology, the emphasis is on qualifying the differences between a previously qualified product and the new product under consideration. The QBS rules for a technology, product, test parameter, or package shall define which attributes are required to remain fixed in order for the QBS rules to apply. The attributes that are expected and allowed to vary are reviewed and a QBS plan shall be developed, based on the reliability impact assessment above, specifying what subset of the full complement of environmental stresses is required to evaluate the reliability impact of those variations. Each new device shall be reviewed for the conformance to the QBS rule sets applicable to the device. See JEDEC JESD47 for more information.

Table 4-1 Device Baseline
TI Device:

ADS1278MHFQ-MLS

Assembly Site:Subcon- Microchip Tech (Thailand)
DLA VID:Not ApplicableTest Site:TI-Taiwan
Wafer Fab:TSMC-WF3Pin/Package Type:Ceramic Quad Flatpack | 84
Fab Process:TSMC 0.35UM DPQM 3.3 V/5 VLeadframe:Not applicable for ceramic
Fab Technology:TSMC 0.35UMTermination Finish:Au
Die Revision:DBond Wire:25.4 µm Al
ESD CDM:±500 VMoisture Sensitivity:Not applicable for Ceramic
ESD HBM:±2000 V
1Baseline information in effect as of the date of this report
Table 4-2 Space Enhanced Products New Device Qualification Matrix
Note that qualification by similarity (“qualification family”) per JEDEC JESD47 is allowed
DescriptionConditionSample Size Used/RejectsLots RequiredTest Method
ElectromigrationMaximum Recommended Operating ConditionsN/AN/APer TI Design Rules
Electrical CharacterizationTI Data Sheet301N/A
Electrostatic Discharge SensitivityHBM3 units/voltage1EIA/JESD22-A114
CDMEIA/JESD22-C101
Latch-up 25°C and 125°CPer Technology6/01EIA/JESD78
C1 Life Test140°C / 500 hours or equivalent47/01MIL-STD-883/Method 1005
Temperature Cycle–65°C to +150°C non-biased for 500 cycles15/0N/AMIL-STD-883/TM1010, Cond C
Visual Quality Reliability InspectionPost Temp Cycle2/01Per TI Design Rules
B2 Resistance to SolventsInk symbol only3/02MIL-STD-883/Method 2015
B3 Solderability245C +/-5%, 22 leads from each unit (3 unit minimum)3/01MIL-STD-883/Method 2003
B5 Bond StrengthDestructive Bond Pull Test, 15 wires pull from each unit (4 unit minimum)4/03MIL-STD-883/Method 2011
D3 Sequence15 Th/S+100 TC + Moist Resis15/03MIL-PRF-38535
D4 SequenceMech Shock + Vibration + Const Acc15/01MIL-PRF-38535
Die ShearPer die size3/01MIL-STD-883/Method 2019
Radiation Response CharacterizationTotal Ionization Dose, and Single-Event Latch-up5 units/dose level1MIL-STD-883/Method 1019