ZHCSH21A October   2017  – February 2018 UCC28780

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     Device Images
      1.      简化原理图
      2.      45W、20V GaN-ACF 适配器效率
  4. 修订历史记录
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information of SOIC
    5. 6.5 Thermal Information of WQFN
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Detailed Pin Description
      1. 7.3.1 BUR Pin (Programmable Burst Mode)
      2. 7.3.2 FB Pin (Feedback Pin)
      3. 7.3.3 VDD Pin (Device Bias Supply)
      4. 7.3.4 REF Pin (Internal 5-V Bias)
      5. 7.3.5 HVG and SWS Pins
      6. 7.3.6 RTZ Pin (Sets Delay for Transition Time to Zero)
      7. 7.3.7 RDM Pin (Sets Synthesized Demagnetization Time for ZVS Tuning)
      8. 7.3.8 RUN Pin (Driver Enable Pin)
      9. 7.3.9 SET Pin
    4. 7.4 Device Functional Modes
      1. 7.4.1  Adaptive ZVS Control with Auto-Tuning
      2. 7.4.2  Dead-Time Optimization
      3. 7.4.3  Control Law across Entire Load Range
      4. 7.4.4  Adaptive Amplitude Modulation (AAM)
      5. 7.4.5  Adaptive Burst Mode (ABM)
      6. 7.4.6  Low Power Mode (LPM)
      7. 7.4.7  Standby Power Mode (SBP)
      8. 7.4.8  Startup Sequence
      9. 7.4.9  Survival Mode of VDD
      10. 7.4.10 System Fault Protections
        1. 7.4.10.1 Brown-In and Brown-Out
        2. 7.4.10.2 Output Over-Voltage Protection
        3. 7.4.10.3 Over-Temperature Protection
        4. 7.4.10.4 Programmable Over-Power Protection
        5. 7.4.10.5 Peak Current Limit
        6. 7.4.10.6 Output Short-Circuit Protection
        7. 7.4.10.7 Over-Current Protection
        8. 7.4.10.8 Thermal Shutdown
      11. 7.4.11 Pin Open/Short Protections
        1. 7.4.11.1 Protections on CS pin Fault
        2. 7.4.11.2 Protections on HVG pin Fault
        3. 7.4.11.3 Protections on RDM and RTZ pin Faults
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application Circuit
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Bulk Capacitance and Minimum Bulk Voltage
        2. 8.2.2.2 Transformer Calculations
          1. 8.2.2.2.1 Primary-to-Secondary Turns Ratio (NPS)
          2. 8.2.2.2.2 Primary Magnetizing Inductance (LM)
          3. 8.2.2.2.3 Primary Turns (NP)
          4. 8.2.2.2.4 Secondary Turns (NS)
          5. 8.2.2.2.5 Turns of Auxiliary Winding (NA)
          6. 8.2.2.2.6 Winding and Magnetic Core Materials
        3. 8.2.2.3 Clamp Capacitor Calculation
        4. 8.2.2.4 Bleed-Resistor Calculation
        5. 8.2.2.5 Output Filter Calculation
        6. 8.2.2.6 Calculation of ZVS Sensing Network
        7. 8.2.2.7 Calculation of Compensation Network
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 General Considerations
      2. 10.1.2 RDM and RTZ Pins
      3. 10.1.3 SWS Pin
      4. 10.1.4 VS Pin
      5. 10.1.5 BUR Pin
      6. 10.1.6 FB Pin
      7. 10.1.7 CS Pin
      8. 10.1.8 GND Pin
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • D|16
  • RTE|16
散热焊盘机械数据 (封装 | 引脚)
订购信息

Protections on HVG pin Fault

As shown in Figure 30, after VVDD reaches VVDD(ON), an internal 11-V regulator on the HVG pin should force VHVG back to the regulation level before PWML starts switching. If the recommended HVG-pin capacitor (CHVG) of 2.2 nF and the connection to the depletion-mode MOSFET (QS) are in place, the settling time of VHVG to 11 V is much longer than 10 μs with a limited sink current of the regulator (ISE(HVG)) to discharge CHVG.

The first fault scenario is that if CHVG is too small, or the HVG pin is open, the pin is not able to control QS correctly for the high-voltage sensing function of ZVS control, so no switching action will be performed. When either two situations happen, VHVG settles to 11 V very quickly instead. Therefore, after a 10-μs delay from the instance of VVDD reaching VVDD(ON), UCC28780 checks if VHVG is below 12 V for the pin-fault detection, and then performs one UVLO cycle of VDD directly without switching as the protection response. The above protection is to prevent the controller from generating PWM signals. However, when the HVG pin is open and disconnected from the QS gate, the source voltage of QS keeps increasing until the TVS on the SWS pin (DSWS) starts to clamp the voltage continuously. To shrink the size of DSWS without incurring too much thermal stress in the small package in this fault condition, it is highly recommended that a small Zener diode (DHVG) between QS gate to ground should be used to limit the QS source voltage. Same as DSWS, DHVG should be higher than VVDD(ON), so as to prevent interference with normal VDD startup.

The second fault scenario is the over-voltage condition of HVG pin after the converter starts switching. When the switch-node voltage (VSW) rises with a high dV/dt condition, there is a charge current flowing through the junction capacitance of QS, and part of the current can charge up CHVG. If the overshoot is too large, the voltage on the SWS pin also increases due to the nature of the depletion-mode MOSFET operation. UCC28780 detects the overshoot event on HVG pin with an over-voltage threshold (VHVG(OV)) of 13.8V cycle-by-cycle. When VHVG is higher than VHVG(OV) for three consecutive PWML pulses, the HVG over-voltage protection is triggered which performs one UVLO cycle of VDD.

The third fault scenario is an HVG pin short event at the beginning of VDD startup, and QS is not able to charge up the VDD capacitor to VDD(ON), so there is no chance to enable the controller.