ZHCSTY3I September   2008  – November 2023 UCC27423-Q1 , UCC27424-Q1 , UCC27425-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Dissipation Ratings
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input Stage
      2. 7.3.2 Output Stage
      3. 7.3.3 Enable
      4. 7.3.4 Parallel Outputs
      5. 7.3.5 Operational Waveforms and Circuit Layout
      6. 7.3.6 VDD
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Source and Sink Capabilities During Miller Plateau
        2. 8.2.2.2 Drive Current and Power Requirements
      3. 8.2.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 第三方产品免责声明
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 接收文档更新通知
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 静电放电警告
    7. 11.7 术语表
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

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7.3.6 VDD

Although quiescent VDD current is very low, total supply current is higher, depending on OUTA and OUTB current and the programmed oscillator frequency. Total VDD current is the sum of quiescent VDD current and the average OUT current. Knowing the operating frequency and the MOSFET gate charge (Qg), average OUT current can be calculated from Equation 1.

Equation 1. IOUT = Qg × f

where

  • f is frequency

For the best high-speed circuit performance, TI recommends two VDD bypass capacitors to prevent noise problems. TI highly recommends using surface-mount components. A 0.1-µF ceramic capacitor must be located closest to the VDD to ground connection. In addition, a larger capacitor (such as 1 µF) with relatively low ESR must be connected in parallel, to help deliver the high current peaks to the load. The parallel combination of capacitors must present a low impedance characteristic for the expected current levels in the driver application.