ZHCSIF6D March   2008  – November 2023 UCC27324-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Overall Electrical Characteristics
    6. 5.6  Power Dissipation Characteristics
    7. 5.7  Input (INA, INB) Electrical Characteristics
    8. 5.8  Output (OUTA, OUTB) Electrical Characteristics
    9. 5.9  Switching Characteristics
    10. 5.10 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Input Stage
      2. 6.3.2 Output Stage
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Parallel Outputs
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Propagation Delay
        2. 7.2.2.2 Source and Sink Capabilities During Miller Plateau
        3. 7.2.2.3 Supply Voltage (VDD)
        4. 7.2.2.4 Drive Current and Power Requirements
      3. 7.2.3 Application Curve
  9. 8 Power Supply Recommendations
  10. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
    3. 9.3 Thermal Considerations
  11. 10Device and Documentation Support
    1. 10.1 第三方产品免责声明
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 接收文档更新通知
    4. 10.4 支持资源
    5. 10.5 Trademarks
    6. 10.6 静电放电警告
    7. 10.7 术语表
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

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6.3.2 Output Stage

Noninverting outputs of the UCC27324-Q1 are intended to drive external N-channel MOSFETs.

Each output stage is capable of supplying ±4-A peak current pulses and swings to both VDD and GND. The pullup and pulldown circuits of the driver are constructed of bipolar and MOSFET transistors in parallel. The peak output current rating is the combined current from the bipolar and MOSFET transistors. The output resistance is the RDS(ON) of the MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor. Each output stage also provides a very low impedance to overshoot and undershoot, due to the body diode of the external MOSFET. This means that, in many cases, external Schottky-clamp diodes are not required.

The UCC27324-Q1 device delivers a 4-A gate drive when it is most needed during the MOSFET switching transition—at the Miller plateau region—providing improved efficiency gains. A unique bipolar and MOSFET hybrid output stage in parallel also allows efficient current sourcing at low supply voltages.