ZHCSK90D september 2019 – january 2021 UCC12050
PRODUCTION DATA
Thermal protection is also integrated to help prevent the device from getting damaged during overload and short-circuit conditions on the isolated output. Under these conditions, the device temperature starts to increase. When the silicon junction temperature Tj sensed at the primary side die goes above the threshold TSDTHR(typical 165°C), thermal shutdown activates and the primary controller turns off which removes the energy supplied to the VISO load, which causes the device to cool off. When the junction temperature drops approximately 27°C (TSDHYST) from the shutdown point, the device starts to function normally. If an overload or output short-circuit condition prevails, this protection cycle is repeated. Make sure the design prevents the device junction temperatures from reaching such high values.