ZHCSIV5B September   2018  – September 2022 TVS3301

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. 说明(续)
  6. Device Comparison Table
  7. Pin Configuration and Functions
  8. Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings - JEDEC
    3. 8.3 ESD Ratings - IEC
    4. 8.4 Recommended Operating Conditions
    5. 8.5 Thermal Information
    6. 8.6 Electrical Characteristics
    7. 8.7 Typical Characteristics
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
    4. 9.4 Device Functional Modes
      1. 9.4.1 Protection Specifications
      2. 9.4.2 Reliability Testing
      3. 9.4.3 Minimal Derating
      4. 9.4.4 Bidirectional Operation
      5. 9.4.5 Transient Performance
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
      4. 10.2.4 PLC Surge Protection Reference Design
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 接收文档更新通知
    3. 13.3 支持资源
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 术语表
  14. 14Mechanical, Packaging, and Orderable Information

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Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
ILEAKLeakage CurrentMeasured at VIN = ±VRWM, TA = 27°C2.5110nA
Measured at VIN = ±VRWM, TA = 85°C450
VBRBreak-down VoltageIIN = ±1 mA34.437.5V
VCLAMPClamp Voltage±Ipp IEC 61000-4-5 Surge (8/20 µs), VIN = 0 V before surge, TA = 27°C4042.5V
21 A IEC 61000-4-5 Surge (8/20 µs), VIN =±VRWM before surge, TA = 125°C43.2
RDYN8/20 µs surge dynamic resistanceCalculated from VCLAMP at .5*IPP and IPP surge current, TA = 25°C35
CINInput pin capacitanceVIN = VRWM, f = 1 MHz, 30 mVpp, IO to GND54pF
SRMaximum Slew Rate0-±VRWM rising edge, sweep rise time and measure slew rate when IPEAK = 1 mA, TA = 27°C2.5V/µs
0-±VRWM rising edge, sweep rise time and measure slew rate when IPEAK = 1 mA, TA = 85°C1.0