ZHCSHT0A December   2017  – March 2018 TVS2700

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      封装比较
      2.      对 8/20µs 浪涌事件的电压钳位响应
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings - JEDEC
    3. 7.3 ESD Ratings - IEC
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Thermal Information
    6. 7.6 Electrical Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Reliability Testing
    5. 8.5 Device Functional Modes
      1. 8.5.1 Protection Specifications
      2. 8.5.2 Minimal Derating
      3. 8.5.3 Transient Performance
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
      4. 9.2.4 Configuration Options
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 接收文档更新通知
    2. 12.2 社区资源
    3. 12.3 商标
    4. 12.4 静电放电警告
    5. 12.5 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.6 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VRWM Reverse Stand-off Voltage -0.5 27 V
ILEAK Leakage Current Measured at VIN = VRWM, TA  = 27°C 1.8 60 nA
Measured at VIN = VRWM. TA  = 85°C 14.5 450 nA
Measured at VIN = VRWM,TA  = 105°C 65 1500 nA
VF Forward Voltage IIN  = 1 mA from GND to IO 0.25 0.5 0.65 V
VBR Break-down Voltage IIN  = 1 mA from IO to GND 29.3 31.2 33.9 V
VFCLAMP Forward Clamp Voltage 40 A IEC 61000-4-5 Surge (8/20 µs) from GND to IO, 27°C 1 2 5 V
VCLAMP Clamp Voltage 24 A IEC 61000-4-5 Surge (8/20 µs) from IO to GND, VIN = 0 V before surge, 27°C 32.2 33.9 V
40 AIEC 61000-4-5 Surge (8/20 µs) from IO to GND, VIN = 0 V before surge, 27°C 32.5 34.1 V
35 A IEC 61000-4-5 Surge (8/20 µs) from IO to GND, VIN = Vrwm before surge, TA = 125°C 33 35 V
RDYN 8/20 µs surge dynamic resistance Calculated from VCLAMP at .5*Ipp and Ipp surge current levels, 27°C 30 mΩ
CIN Input pin capacitance VIN = VRWM, f = 1 MHz, 30 mVpp, IO to GND 100 pF
SR Maximum Slew Rate 0-VRWM rising edge, sweep rise time and measure slew rate when IPK = 1 mA, 27°C 2.5 V/µs
0-VRWM rising edge, sweep rise time and measure slew rate when IPK = 1 mA, 105°C 0.7 V/µs