ZHCSHJ8C
December 2017 – November 2019
TVS0500
PRODUCTION DATA.
1
特性
2
应用
3
说明
Device Images
封装比较
对 8/20µs 浪涌事件的电压钳位响应
4
修订历史记录
5
Device Comparison Table
6
Pin Configuration and Functions
Pin Functions
7
Specifications
7.1
Absolute Maximum Ratings
7.2
ESD Ratings - JEDEC
7.3
ESD Ratings - IEC
7.4
Recommended Operating Conditions
7.5
Thermal Information
7.6
Electrical Characteristics
7.7
Typical Characteristics
8
Detailed Description
8.1
Overview
8.2
Functional Block Diagram
8.3
Feature Description
8.4
Reliability Testing
8.5
Device Functional Modes
8.5.1
Protection Specifications
8.5.2
Minimal Derating
8.5.3
Transient Performance
9
Application and Implementation
9.1
Application Information
9.2
Typical Application
9.2.1
Design Requirements
9.2.2
Detailed Design Procedure
9.2.3
Configuration Options
10
Power Supply Recommendations
11
Layout
11.1
Layout Guidelines
11.2
Layout Example
12
器件和文档支持
12.1
接收文档更新通知
12.2
社区资源
12.3
商标
12.4
静电放电警告
12.5
Glossary
13
机械、封装和可订购信息
封装选项
机械数据 (封装 | 引脚)
DRV|6
MPDS216E
散热焊盘机械数据 (封装 | 引脚)
DRV|6
QFND087M
订购信息
zhcshj8c_oa
zhcshj8c_pm
7.7
Typical Characteristics
Figure 1.
8/20 µs Surge Response at 43 A
f = 1 MHz, 30 mVpp, IO to GND
Figure 3.
Capacitance vs Temperature Across Bias
Figure 5.
I/V Curve Across Temperature
Figure 7.
Breakdown Voltage (1 mA) vs Temperature
Figure 9.
Dynamic Leakage vs Signal Slew Rate across Temperature
Figure 2.
8/20 µs Surge Response at 35 A Across Temperature
Figure 4.
Leakage Current vs Temperature at 5 V
Figure 6.
Forward Voltage vs Temperature
Figure 8.
Max Surge Current (8/20 µs) vs Temperature