ZHCSP85D november   2021  – august 2023 TPSI3050-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety Limiting Values
    9. 6.9  Electrical Characteristics
    10. 6.10 Switching Characteristics
    11. 6.11 Insulation Characteristic Curves
    12. 6.12 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Transmission of the Enable State
      2. 8.3.2 Power Transmission
      3. 8.3.3 Gate Driver
      4. 8.3.4 Modes Overview
      5. 8.3.5 Three-Wire Mode
      6. 8.3.6 Two-Wire Mode
      7. 8.3.7 VDDP, VDDH, and VDDM Undervoltage Lockout (UVLO)
      8. 8.3.8 Power Supply and EN Sequencing
      9. 8.3.9 Thermal Shutdown
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Two-Wire or Three-Wire Mode Selection
        2. 9.2.2.2 Standard Enable, One-Shot Enable
        3. 9.2.2.3 CDIV1, CDIV2 Capacitance
        4. 9.2.2.4 RPXFR Selection
        5. 9.2.2.5 CVDDP Capacitance
        6. 9.2.2.6 Gate Driver Output Resistor
        7. 9.2.2.7 Start-up Time and Recovery Time
        8. 9.2.2.8 Supplying Auxiliary Current, IAUX From VDDM
        9. 9.2.2.9 VDDM Ripple Voltage
      3. 9.2.3 Application Curves
      4. 9.2.4 Insulation Lifetime
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Related Links
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表
  12. 11Mechanical, Packaging, and Orderable Information

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9.4.1 Layout Guidelines

Designers must pay close attention to PCB layout to achieve optimum performance for the TPSI3050-Q1. Some key guidelines are:

  • Component placement:
    • Place the driver as close as possible to the power semiconductor to reduce the parasitic inductance of the gate loop on the PCB traces.
    • Connect low-ESR and low-ESL capacitors close to the device between the VDDH and VDDM pins and the VDDM and VSSS pins to bypass noise and to support high peak currents when turning on the external power transistor.
    • Connect low-ESR and low-ESL capacitors close to the device between the VDDP and VSSP pins.
    • Minimize parasitic capacitances on the RPXFR pin.
  • Grounding considerations:
    • Limit the high peak currents that charge and discharge the transistor gates to a minimal physical area. This limitation decreases the loop inductance and minimizes noise on the gate terminals of the transistors. Place the gate driver as close as possible to the transistors.
    • Connect the driver VSSS to the Kelvin connection of MOSFET source or IGBT emitter. If the power device does not have a split Kelvin source or emitter, connect the VSSS pin as close as possible to the source or emitter terminal of the power device package to separate the gate loop from the high power switching loop.
  • High-voltage considerations:
    • To ensure isolation performance between the primary and secondary side, avoid placing any PCB traces or copper below the driver device. TI recommends a PCB cutout or groove to prevent contamination that can compromise the isolation performance.
  • Thermal considerations:
    • Proper PCB layout can help dissipate heat from the device to the PCB and minimize junction-to-board thermal impedance (θJB).
    • If the system has multiple layers, TI also recommends connecting the VDDH and VSSS pins to internal ground or power planes through multiple vias of adequate size. These vias must be located close to the IC pins to maximize thermal conductivity. However, keep in mind that no traces or coppers from different high voltage planes are overlapping.