ZHCSGY7B October   2017  – January 2018 TPS92830-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     简化原理图
  4. 4 修订历史记录
  5. 5 说明 （续）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Device Bias
        1. 8.3.1.1 Power-On-Reset (POR)
        2. 8.3.1.2 Current Reference (IREF)
        3. 8.3.1.3 Low-Current Fault Mode
      2. 8.3.2 Charge Pump
        1. 8.3.2.1 Charge Pump Architecture
      3. 8.3.3 Constant-Current Driving
        1. 8.3.3.1 High-Side Current Sense
        2. 8.3.3.2 High-Side Current Driving
        3. 8.3.3.3 Gate Overdrive Voltage Protection
        4. 8.3.3.4 High-Precision Current Regulation
        5. 8.3.3.5 Parallel MOSFET Driving
      4. 8.3.4 PWM Dimming
        1. 8.3.4.1 Supply Dimming
        2. 8.3.4.2 PWM Dimming by Input
        3. 8.3.4.3 Internal Precision PWM Generator
        4. 8.3.4.4 Full Duty-Cycle Switch
      5. 8.3.5 Analog Dimming
        1. 8.3.5.1 Analog Dimming Topology
        2. 8.3.5.2 Internal High-Precision Pullup Current Source
      6. 8.3.6 Output Current Derating
        1. 8.3.6.1 Output-Current Derating Topology
      7. 8.3.7 Diagnostics and Fault
        1. 8.3.7.1 LED Short-to-GND Detection
        2. 8.3.7.2 LED Short-to-GND Auto Retry
        3. 8.3.7.3 LED Open-Circuit Detection
        4. 8.3.7.4 LED Open-Circuit Auto Retry
        5. 8.3.7.5 Dropout-Mode Diagnostics
        6. 8.3.7.6 Overtemperature Protection
        7. 8.3.7.7 FAULT Bus Output With One-Fails–All-Fail
        8. 8.3.7.8 Fault Table
    4. 8.4 Device Functional Modes
      1. 8.4.1 Undervoltage Lockout, V(IN) < V(UVLO)
      2. 8.4.2 Normal Operation (V(IN) ≥ 4.5 V, V(IN) > V(LED) + 0.5 V)
      3. 8.4.3 Low-Voltage Dropout
      4. 8.4.4 Fault Mode (Fault Is Detected)
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Typical Application for Automotive Exterior Lighting With One-Fails–All-Fail
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 High-Precision Dual-Brightness PWM Generation
        1. 9.2.2.1 Dual-Brightness Application
        2. 9.2.2.2 Design Requirements
        3. 9.2.2.3 Detailed Design Procedure
        4. 9.2.2.4 Application Curve
      3. 9.2.3 Driving High-Current LEDs With Parallel MOSFETs
        1. 9.2.3.1 Application Curves
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 接收文档更新通知
    2. 11.2 社区资源
    3. 11.3 商标
    4. 11.4 静电放电警告
    5. 11.5 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

4 修订历史记录

Changes from A Revision (October 2017) to B Revision

  • Changed timing specification for PWM duty cycleGo

Changes from * Revision (July 2017) to A Revision

  • 在特性 部分中更改了电流调节和 PWM 发生器的容差Go
  • Changed values for several parameters throughout the Electrical Characteristics tableGo
  • Changed parameter definitions for I(DRV_source) and I(DRV_sink) in the Electrical Chaaracteristics tableGo
  • Changed parameter symbols for analog dimming accuracy in the Electrical Characteristics tableGo
  • Changed parameter descriptions for V(OPEN_th_rising), V(OPEN_th_falling),Go
  • Changed parameter descriptions for t(SG_retry_OFF) and t(OPEN_retry_OFF) in the Timing Requirements tableGo
  • Added a condition for Typical CharacteristicFigure 6Go
  • Deleted a condition from Typical CharacteristicFigure 8Go
  • Deleted a Fast Power Down and Slow Power Up typical characteristic graphGo
  • Added a Fast Power Down and Slow Power Up typical characteristic graphGo
  • Added a condition for Typical CharacteristicFigure 17Go
  • Added a condition for Typical CharacteristicFigure 18Go
  • Changed heat dissipation to current distribution in Parallel MOSFET DrivingGo
  • Deleted a sentence from the PWM Dimming by Input sectionGo
  • Added resistor and capacitor reference designatorsGo
  • Deleted percentage values for V(ICTRL_LIN_BOT) and V(ICTRL_LIN_TOP) in the Analog Dimming Topology sectionGo
  • Changed V(SG_th_rising) and V(SG_th_falling) with each other in the LED Short-to-GND Detection sectionGo
  • Changed symbol of short-to-ground retry current to I(Retry_short)Go
  • Changed symbol of LED-open retry current to I(Retry_open) in the LED Open-Circuit Auto Retry sectionGo
  • Changed some FAULT TYPE names in Table 4Go
  • Updated application schematic. Go
  • Changed the value of R8 from 75 kΩ to 76 kΩ for the PWM threshold settingGo
  • Changed the equation for calculating K(RES_DiagEn)Go
  • Changed the values of R13 and R6 for Go
  • Changed the equation for calculating K(RES_DERATE)Go
  • Changed component values inthe PWM equations of the Detailed Design ProcedureGo
  • Added an application curveGo
  • Added text in the Layout Guidelines for keeping LED ground separate from device groundGo