ZHCSI42G June   2007  – April 2018 TPS62290 , TPS62291 , TPS62293

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     Device Images
      1.      典型应用电路原理图
      2.      效率与输出电流间的关系
  4. 修订历史记录
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Dynamic Voltage Positioning
      2. 8.3.2 Enable
      3. 8.3.3 Mode Selection
      4. 8.3.4 Undervoltage Lockout
      5. 8.3.5 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Soft-Start
      2. 8.4.2 Power Save Mode
      3. 8.4.3 100% Duty Cycle Low Dropout Operation
      4. 8.4.4 Short-Circuit Protection
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Output Voltage Setting
        2. 9.2.2.2 Output Filter Design (Inductor and Output Capacitor)
          1. 9.2.2.2.1 Inductor Selection
          2. 9.2.2.2.2 Output Capacitor Selection
          3. 9.2.2.2.3 Input Capacitor Selection
      3. 9.2.3 Application Curves
    3. 9.3 System Examples
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 相关链接
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 术语表
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Electrical Characteristics

Over full operating ambient temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply for condition VIN = EN = 3.6 V. External components CIN = 4.7 μF 0603, COUT = 10 μF 0603, L = 2.2 μH, refer to parameter measurement information.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
VIN Input voltage 2.3 6 V
IOUT Output current VIN 2.7 V to 6 V 1000 mA
VIN 2.5 V to 2.7 V 600
VIN 2.3 V to 2.5 V 300
IQ Operating quiescent current IOUT = 0 mA, PFM mode enabled
(MODE = GND) device not switching, See (1)
15 μA
IOUT = 0 mA, switching with no load
(MODE = VIN) PWM operation,
VOUT = 1.8 V, VIN = 3 V
3.8 mA
ISD Shutdown current EN = GND 0.1 1 μA
UVLO Undervoltage lockout threshold Falling 1.85 V
Rising 1.95
ENABLE, MODE
VIH High level input voltage, EN, MODE 2.3 V ≤ VIN ≤ 6 V 1 VIN V
VIL Low level input voltage, EN, MODE 2.3 V ≤ VIN ≤ 6 V 0 0.4 V
IIN Input bias current, EN, MODE EN, MODE = GND or VIN 0.01 1 μA
POWER SWITCH
RDS(on) High side MOSFET on-resistance VIN = VGS = 3.6 V, TA = 25°C 240 480 mΩ
Low side MOSFET on-resistance 185 380
ILIMF Forward current limit MOSFET high-side and low side VIN = VGS = 3.6 V 1.19 1.4 1.68 A
TSD Thermal shutdown Increasing junction temperature 140 °C
Thermal shutdown hysteresis Decreasing junction temperature 20
OSCILLATOR
fSW Oscillator frequency 2.3 V ≤ VIN  ≤ 6 V 2.0 2.25 2.5 MHz
OUTPUT
VOUT Adjustable output voltage range 0.6 VI V
Vref Reference voltage 600 mV
VFB(PWM) Feedback voltage PWM mode MODE = VIN, PWM operation,
2.3 V ≤ VIN  ≤ 6 V, See (2)
–1.5% 0% 1.5%
VFB(PFM) Feedback voltage PFM mode MODE = GND, device in PFM mode, +1% voltage positioning active, See (1) 1%
Load regulation –0.5 %/A
tStart Up Start-up time Time from active EN to reach 95% of VOUT 500 μs
tRamp VOUT ramp-up time Time to ramp from 5% to 95% of VOUT 250 μs
Ilkg Leakage current into SW pin VIN = 3.6 V, VIN = VOUT = VSW, EN = GND,
See (3)
0.1 1 μA
In PFM mode, the internal reference voltage is set to typical 1.01 × Vref . See the parameter measurement information.
For VIN = VOUT + 1.0 V
In fixed output voltage versions, the internal resistor divider network is disconnected from FB pin.