SLVSB38C March   2011  – August 2016 TPS62242-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Lockout
      2. 8.3.2 Enable
      3. 8.3.3 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Soft Start
      2. 8.4.2 Power Save Mode
        1. 8.4.2.1 100% Duty Cycle Low Dropout Operation
      3. 8.4.3 Short-Circuit Protection
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Output Filter Design (Inductor and Output Capacitor)
          1. 9.2.2.1.1 Inductor Selection
          2. 9.2.2.1.2 Output Capacitor Selection
          3. 9.2.2.1.3 Input Capacitor Selection
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Third-Party Products Disclaimer
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VI Input voltage(2) –0.3 7 V
Voltage at EN –0.3 VIN + 0.3, ≤7 V
Voltage on SW –0.3 7 V
Peak output current Internally limited A
TJ Maximum operating junction temperature –40 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V
Charged-device model (CDM), per AEC Q100-011 ±750
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VI Supply voltage, VIN 2 6 V
L Inductance 1.5 4.7 µH
COUT Output capacitance 4.7 10 µF
TA Operating ambient temperature –40 115 °C
TJ Operating junction temperature –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) TPS62242-Q1 UNIT
DDC (SOT)
5 PINS
RθJA Junction-to-ambient thermal resistance 193.7 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 40.7 °C/W
RθJB Junction-to-board thermal resistance 35 °C/W
ψJT Junction-to-top characterization parameter 0.9 °C/W
ψJB Junction-to-board characterization parameter 34.7 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

Over full operating ambient temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply for condition VIN = EN = 3.6 V. External components CIN = 4.7 μF 0603, COUT = 10 μF 0603, L = 2.2 μH, refer to parameter measurement information.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
VIN Input voltage range 2 6 V
IOUT Output current 2.3 V ≤ VIN ≤ 6 V 300 mA
2 V ≤ VIN ≤ 2.3 V 150
IQ Operating quiescent current IOUT = 0 mA. Pulse frequency modulation (PFM) mode enabled, device not switching 15 μA
IOUT = 0 mA. PFM mode enabled, device switching, VOUT = 1.2 V (1) 18.5
IOUT = 0 mA, switching with no load, PWM operation, VOUT = 1.2 V, VIN = 3 V 3.8 mA
ISD Shutdown current EN = GND, TA = 25°C 0.1 1 μA
EN = GND, TA = –40°C to 115°C 5 µA
UVLO Undervoltage lockout threshold Falling 1.85 V
Rising 1.95
ENABLE, MODE
VIH High-level input voltage, EN 2 V ≤ VIN ≤ 6 V 1 VIN V
VIL Low-level input voltage, EN 2 V ≤ VIN ≤ 6 V, TA = 25°C 0 0.4 V
2 V ≤ VIN ≤ 6 V , TA = –40°C to 115°C 0.35 V
IIN Input bias current, EN EN, MODE = GND or VIN 0.01 1 μA
POWER SWITCH
RDS(on) High-side MOSFET ON-resistance VIN = VGS = 3.6 V, TA = 25°C 240 480 mΩ
Low-side MOSFET ON-resistance 180 380
ILIMF Forward current limit MOSFET high-side and low-side VIN = VGS = 3.6 V, TA= 25°C 0.56 0.7 0.84 A
VIN = VGS = 3.6 V, TA = –40°C to 115°C 0.54 0.95
TSD Thermal shutdown Increasing junction temperature 135 150 165 °C
Thermal shutdown hysteresis Decreasing junction temperature 12 14 16 °C
OSCILLATOR
ƒSW Oscillator frequency 2 V ≤ VIN ≤ 6 V 2 2.25 2.5 MHz
OUTPUT
VOUT Output voltage 1.2 V
VREF Reference voltage TA = 25°C 594 600 606 mV
VFB Feedback voltage PWM operation, 2 V ≤ VIN ≤ 6 V, in fixed output voltage versions VFB = VOUT, See (3) ,TA = 25°C
 –1.5% 0% 1.5%
PWM operation, 2 V ≤ VIN ≤ 6 V, in fixed output voltage versions VFB = VOUT, See (3) ,TA = –40°C to 115°C –1.5% 2.5%
Feedback voltage PFM mode Device in PFM mode 0%
Load regulation PWM mode –0.5 %/A
tStart up Start-up time Time from active EN to reach 95% of VOUT nominal 500 μs
tRamp VOUT ramp UP time Time to ramp from 5% to 95% of VOUT 250 μs
Ilkg Leakage current into SW pin VIN = 3.6 V, VIN = VOUT = VSW, EN = GND,(2) ,
TA = 25°C		 0.1 1 μA
VIN = 3.6 V, VIN = VOUT = VSW, EN = GND, (2),
TA = –40°C to 115°C		 10
(1) See the parameter measurement information.
(2) The internal resistor divider network is disconnected from FB pin.
(3) For VIN = VO+ 0.6

6.6 Typical Characteristics

Table 1. Table of Graphs

FIGURE
Shutdown Current into VIN vs Input Voltage, (TA = 85°C, TA = 25°C, TA = –40°C) Figure 1
Quiescent Current vs Input Voltage, (TA = 85°C, TA = 25°C, TA = –40°C) Figure 2
Static Drain-Source On-State Resistance vs Input Voltage, (TA = 85°C, TA = 25°C, TA = –40°C) Figure 3
Figure 4
TPS62242-Q1 isd_v_vin_lvs762.gif Figure 1. Shutdown Current Into VIN vs Input Voltage
TPS62242-Q1 rds_hs_vin_lvs762.gif Figure 3. Static Drain-Source On-State Resistance
vs Input Voltage
TPS62242-Q1 iq_v_vin_lvs762.gif Figure 2. Quiescent Current vs Input Voltage
TPS62242-Q1 rds_ls_vin_lvs762.gif Figure 4. Static Drain-Source On-State Resistance
vs Input Voltage