ZHCSJF8F December   2008  – April 2019 TPS61175

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化原理图
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Switching Frequency
      2. 7.3.2 Soft Start
      3. 7.3.3 Overcurrent Protection
      4. 7.3.4 Enable and Thermal Shutdown
      5. 7.3.5 Undervoltage Lockout (UVLO)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Minimum ON Time and Pulse Skipping
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Custom Design with WEBENCH Tools
        2. 8.2.2.2  Determining the Duty Cycle
        3. 8.2.2.3  Selecting the Inductor
        4. 8.2.2.4  Computing the Maximum Output Current
        5. 8.2.2.5  Setting Output Voltage
        6. 8.2.2.6  Setting the Switching Frequency
        7. 8.2.2.7  Setting the Soft-Start Time
        8. 8.2.2.8  Selecting the Schottky Diode
        9. 8.2.2.9  Selecting the Input and Output Capacitors
        10. 8.2.2.10 Compensating the Small Signal Control Loop
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 第三方产品免责声明
    2. 11.2 开发支持
      1. 11.2.1 使用 WEBENCH 工具创建定制设计
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.5 Electrical Characteristics

FSW = 1.2 MHz (Rfreq = 80 kΩ), VIN = 3.6 V, TA = –40°C to +85°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
VIN Input voltage range 2.9 18 V
IQ Operating quiescent current into Vin Device PWM switching without load 3.5 mA
ISD Shutdown current EN=GND 1.5 μA
VUVLO Under-voltage lockout threshold 2.5 2.7 V
Vhys Under-voltage lockout hysteresis 130 mV
ENABLE AND REFERENCE CONTROL
Venh EN logic high voltage VIN = 2.9 V to 18 V 1.2 V
Venl EN logic low voltage VIN = 2.9 V to 18 V 0.4 V
VSYNh SYN logic high voltage 1.2
VSYNl SYN logic low voltage 0.4 V
Ren EN pull down resistor 400 800 1600 kΩ
Toff Shutdown delay, SS discharge EN high to low 10 ms
VOLTAGE AND CURRENT CONTROL
VREF Voltage feedback regulation voltage 1.204 1.229 1.254 V
IFB Voltage feedback input bias current 200 nA
Isink Comp pin sink current VFB = VREF + 200 mV, VCOMP = 1 V 50 μA
Isource Comp pin source current VFB = VREF –200 mV, VCOMP = 1 V 130 μA
VCCLP Comp pin clamp voltage High Clamp, VFB = 1 V
Low Clamp, VFB = 1.5 V		 3
0.75		 V
VCTH Comp pin threshold Duty cycle = 0% 0.95 V
Gea Error amplifier transconductance 240 340 440 μmho
Rea Error amplifier output resistance 10 MΩ
fea Error amplifier crossover frequency 500 KHz
FREQUENCY
fS Oscillator frequency Rfreq = 480 kΩ 0.16 0.21 0.26 MHz
Rfreq = 80 kΩ 1.0 1.2 1.4
Rfreq = 40 kΩ 1.76 2.2 2.64
Dmax Maximum duty cycle VFB = 1 V, Rfreq = 80 kΩ 89% 93%
VFREQ FREQ pin voltage 1.229 V
Tmin_on Minimum on pulse width Rfreq = 80 kΩ 60 ns
POWER SWITCH
RDS(ON) N-channel MOSFET on-resistance VIN = VGS = 3.6 V
VIN = VGS = 3.0 V		 0.13
0.13		 0.25
0.3		 Ω
ILN_NFET N-channel leakage current VDS = 40 V, TA = 25°C 1 μA
OC, OVP AND SS
ILIM N-Channel MOSFET current limit D = Dmax 3 3.8 5 A
ISS Soft start bias current Vss = 0 V 6 μA
THERMAL SHUTDOWN
Tshutdown Thermal shutdown threshold 160 °C
T hysteresis Thermal shutdown threshold hysteresis 15 °C