ZHCSI48B September   2017  – June 2018 TPS560430

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     Device Images
      1.      简化原理图
      2.      效率与输出电流间的关系 VOUT = 5V,1100kHz,PFM
  4. 修订历史记录
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Fixed Frequency Peak Current Mode Control
      2. 8.3.2 Adjustable Output Voltage
      3. 8.3.3 Enable
      4. 8.3.4 Minimum ON-Time, Minimum OFF-Time and Frequency Foldback
      5. 8.3.5 Bootstrap Voltage
      6. 8.3.6 Over Current and Short Circuit Protection
      7. 8.3.7 Soft Start
      8. 8.3.8 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown Mode
      2. 8.4.2 Active Mode
      3. 8.4.3 CCM Mode
      4. 8.4.4 Light-Load Operation (PFM Version)
      5. 8.4.5 Light-Load Operation (FPWM Version)
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Custom Design With WEBENCH® Tools
        2. 9.2.2.2 Output Voltage Set-Point
        3. 9.2.2.3 Switching Frequency
        4. 9.2.2.4 Inductor Selection
        5. 9.2.2.5 Output Capacitor Selection
        6. 9.2.2.6 Input Capacitor Selection
        7. 9.2.2.7 Bootstrap Capacitor
        8. 9.2.2.8 Under Voltage Lockout Set-Point
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Compact Layout for EMI Reduction
      2. 11.1.2 Feedback Resistors
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
      1. 12.1.1 开发支持
        1. 12.1.1.1 使用 WEBENCH® 工具创建定制设计
    2. 12.2 文档支持
      1. 12.2.1 相关文档
    3. 12.3 接收文档更新通知
    4. 12.4 社区资源
    5. 12.5 商标
    6. 12.6 静电放电警告
    7. 12.7 术语表
  13. 13机械、封装和可订购信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DBV|6
散热焊盘机械数据 (封装 | 引脚)
订购信息

Electrical Characteristics

Limits apply over the recommended operating junction temperature (TJ ) range of –40°C to +125°C, unless otherwise stated. Minimum and maximum limits are specified through test, design or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25 °C, and are provided for reference purposes only. Unless otherwise stated, the following conditions apply: VIN = 4 V to 36 V.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE (VIN PIN)
VIN Operation input voltage 4 36 V
VIN_UVLO Undervoltage lockout thresholds Rising threshold 3.55 3.75 4.00 V
Falling threshold 3.25 3.45 3.65
Hysteresis 0.3
IQ Operating quiescent current (non-switching) PFM version, VEN = 3.3 V, VFB = 1.1V 80 120 µA
ISHDN Shutdown current VEN = 0 V 3 10 µA
ENABLE (EN PIN)
VEN_H Enable rising threshold voltage 1.1 1.23 1.36 V
VEN_L Enable falling threshold voltage 0.95 1.1 1.22 V
VEN_HYS Enable hysteresis voltage 0.13 V
IEN Leakage current at EN pin VEN = 3.3 V 10 200 nA
VOLTAGE REFERENCE (FB PIN)
VREF Reference voltage TJ = 25 °C 0.995 1.00 1.005 V
TJ = –40 °C to 125 °C 0.985 1.00 1.015 V
Fixed 3.3-V output, TJ = 25 °C 3.28 3.3 3.32 V
Fixed 3.3-V output, TJ = –10 °C to 85 °C 3.272 3.3 3.328 V
Fixed 3.3-V output, TJ = –40 °C to 125 °C 3.25 3.3 3.35 V
IFB Leakage current at FB pin VFB = 1.2 V 0.2 50 nA
Fixed 3.3-V output, VFB = 3.96 V 1.7 µA
CURRENT LIMITS AND HICCUP
IHS_LIMIT Peak inductor current limit 0.8 1.1 1.4 A
ILS_LIMIT Valley inductor current limit 0.62 0.8 0.98 A
ILS_ZC Zero cross current (PFM version) 20 mA
ILS_NEG Negative current limit (FPWM version) -0.7 -0.5 -0.3 A
VHICCUP Hiccup threshold of FB pin % of reference voltage 40%
INTEGRATED MOSFETS
RDS_ON_HS High-side MOSFET ON-resistance TJ = 25 °C, VIN = 12 V 450
RDS_ON_LS Low-side MOSFET ON-resistance TJ = 25 °C, VIN = 12 V 240
THERMAL SHUTDOWN(1)
TSHDN Thermal shutdown threshold 170 °C
THYS Hysteresis 12 °C
Guaranteed by design.